Combining Image Processing Techniques and Mobile Sensor Information for Marker-less Augmented Reality Based Reconstruction

Marker-less Augmented Reality(AR) based recon- struction using mobile devices, is a near impossible task. When considering vision based tracking approaches, it is due to the lack of processing power in mobile devices and when considering mobile sensor based tracking approaches, it is due to the lack of accuracy in mobile Global Positioning System(GPS). In order to address this problem this research presents a novel approach which combines image processing techniques and mobile sensor information which can be used to perform precise position localization in order to perform augmented reality based reconstruction using mobile devices. The core of this proposed methodology is tightly bound with the image processing technique which is used to identify the object scale in a given image, which is taken from the user’s mobile device. Use of mobile sensor information was to classify the most optimal locations for a given particular user location. This proposed methodology has been evaluated against the results obtained using 10cm accurate Real-Time Kinematic(RTK) device and against the results obtained using only the Assisted Global  Positioning  System(A-GPS)  chips  in  mobile  devices. Though  this  proposed  methodology  require  more  processing time than A-GPS chips, the accuracy level of this proposed methodology outperforms that of A-GPS chips and the results of the experiments carried out further convince that this proposed methodology facilitates improving the accuracy of position local- ization for augmented reality based reconstruction using mobile devices under certain limitations

Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures

We present comprehensive experimental and theoretical work on tunnel-barrier rectifiers comprising bilayer (Nb2O5/Al2O3) insulator configurations with similar (Nb/Nb) and dissimilar (Nb/Ag) metal electrodes. The electron affinity, valence band offset, and metal work function were ascertained by X-ray photoelectron spectroscopy, variable angle spectroscopic ellipsometry, and electrical measurements on fabricated reference structures. The experimental band line-up parameters were fed into a theoretical model to predict available bound states in the Nb2O5/Al2O3 quantum well and generate tunneling probability and transmittance curves under applied bias. The onset of strong resonance in the sub-V regime was found to be controlled by a work function difference of Nb/Ag electrodes in agreement with the experimental band alignment and theoretical model. A superior low-bias asymmetry of 35 at 0.1 V and a responsivity of 5 A/W at 0.25 V were observed for the Nb/4 nm Nb2O5/1 nm Al2O3/Ag structure, sufficient to achieve a rectification of over 90% of the input alternate current terahertz signal in a rectenna device

IN-VITRO MULTIPLICATION OF GINGER (Zingiber officinale ROSC.) CULTIVARS LOCAL, CHINESE AND RANGUN

Abstract In Ginger, it is necessary to find an alternative method for production of disease free planting materials as the conventional propagation technique through rhizomes transmit many diseases. The present study summarizes an efficient micropropagation method developed for Zingiber officinale Rosc. (Ginger) cultivar, Local, Chinese and Rangun using sprouted bud explants from fresh rhizomes. Newly sprouted rhizome buds with the size of 0.5-1.0 cm were surface sterilized with 30% Clorox for 30 minutes prior to culture and this treatment resulted 60%-70% healthy pure explants for all three cultivars

Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature

A study into the optimal deposition temperature for ultra-thin La2O3/Ge and Y2O3/Ge gate stacks has been conducted in this paper with the aim to tailor the interfacial layer for effective passivation of the Ge interface. A detailed comparison between the two lanthanide oxides (La2O3 and Y2O3) in terms of band line-up, interfacial features, and reactivity to Ge using medium energy ion scattering, vacuum ultra-violet variable angle spectroscopic ellipsometry (VUV-VASE), X-ray photoelectron spectroscopy, and X-ray diffraction is shown. La2O3 has been found to be more reactive to Ge than Y2O3, forming LaGeOx and a Ge sub-oxide at the interface for all deposition temperature studied, in the range from 44 °C to 400 °C. In contrast, Y2O3/Ge deposited at 400 °C allows for an ultra-thin GeO2 layer at the interface, which can be eliminated during annealing at temperatures higher than 525 °C leaving a pristine YGeOx/Ge interface. The Y2O3/Ge gate stack deposited at lower temperature shows a sub-band gap absorption feature fitted to an Urbach tail of energy 1.1 eV. The latter correlates to a sub-stoichiometric germanium oxide layer at the interface. The optical band gap for the Y2O3/Ge stacks has been estimated to be 5.7 ± 0.1 eV from Tauc-Lorentz modelling of VUV-VASE experimental data. For the optimal deposition temperature (400 °C), the Y2O3/Ge stack exhibits a higher conduction band offset (>2.3 eV) than the La2O3/Ge (∼2 eV), has a larger band gap (by about 0.3 eV), a germanium sub-oxide free interface, and leakage current (∼10−7 A/cm2 at 1 V) five orders of magnitude lower than the respective La2O3/Ge stack. Our study strongly points to the superiority of the Y2O3/Ge system for germanium interface engineering to achieve high performance Ge Complementary Metal Oxide Semiconductor technology

Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures

The electrical properties of bi-layer Ta2O5/Al2O3 and Nb2O5/Al2O3 metal–insulator–insulator–metal nanostructures as rectifiers have been investigated. The ultra-thin (1–6 nm) insulator layers were deposited by atomic-layer deposition or rf magnetron sputtering with Al as metal contacts. Variable angle spectroscopic ellipsometry was performed to extract the optical properties and band gap of narrow band gap insulator layers while the surface roughness of the metal contacts was measured by atomic force microscopy. Superior low voltage large signal and small signal nonlinearities such as asymmetry of 18 at 0.35 V, rate of change of non-linearity of 7.5 V�1, and responsivity of 9 A/W at 0.2 V were observed from the current–voltage characteristics. A sharp increase in current at �2 V on Ta2O5/Al2O3 device can be ascribed to resonant tunneling

Interface Engineering Routes for a Future CMOS Ge-based Technology

We present an overview study of two germanium interface engineering routes, firstly a germanate formation via La2O3 and Y2O3, and secondly a barrier layer approach using Al2O3 and Tm2O3. The interfacial composition, uniformity, thickness, band gap, crystallinity, absorption features and valence band offset are determined using X-ray photoelectron spectroscopy, ultra violet variable angle spectroscopic ellipsometry, and high resolution transmission electron microscopy. The correlation of these results with electrical characterization data make a case for Ge interface engineering with rare-earth inclusion as a viable route to achieve high performance Ge CMOS.</jats:p

Atomic-layer deposited thulium oxide as a passivation layer on germanium

A comprehensive study of atomic-layer deposited thulium oxide (Tm2O3) on germanium has been conducted using x-ray photoelectron spectroscopy (XPS), vacuum ultra-violet variable angle spectroscopic ellipsometry, high-resolution transmission electron microscopy (HRTEM), and electron energy-loss spectroscopy. The valence band offset is found to be 3.05 ± 0.2 eV for Tm2O3/p-Ge from the Tm 4d centroid and Ge 3p3/2 charge-corrected XPS core-level spectra taken at different sputtering times of a single bulk thulium oxide sample. A negligible downward band bending of ∼0.12 eV is observed during progressive differential charging of Tm 4d peaks. The optical band gap is estimated from the absorption edge and found to be 5.77 eV with an apparent Urbach tail signifying band gap tailing at ∼5.3 eV. The latter has been correlated to HRTEM and electron diffraction results corroborating the polycrystalline nature of the Tm2O3 films. The Tm2O3/Ge interface is found to be rather atomically abrupt with sub-nanometer thickness. In addition, the band line-up of reference GeO2/n-Ge stacks obtained by thermal oxidation has been discussed and derived. The observed low reactivity of thulium oxide on germanium as well as the high effective barriers for holes (∼3 eV) and electrons (∼2 eV) identify Tm2O3 as a strong contender for interfacial layer engineering in future generations of scaled high-κ gate stacks on Ge

Social innovations for social cohesion in Western Europe: success dimensions for lifelong learning and education

YesIn addressing the EU2020 goals, skills shortage combined with increasing unemployment rates is to be primarily tackled in Western Europe; the common factor here is education. Education and lifelong learning (LL) are the key strands governing employability in the European labour market. Overarching concepts capable of addressing social challenges within education and LL that contribute towards better practices are seen as social innovations (SI). While SI in education is well founded in the developing countries, Europe is still in the process of gaining progressive momentum in this direction. In addressing various societal challenges, this study looks at observable trends in SI for education across Western Europe. About 30 innovations have been recorded across 11 countries that are essentially focussed on: social integration, alternative/new forms of education, digital learning, new learning arrangements, new LL strategies, early career planning, youth employment, quality improvements and new education standards, transition management, and entrepreneurial education.European Union’s Seventh Framework Programme for research, technological development and demonstration [grant number 612870]