2,835 research outputs found

    Effect of deposition conditions and thermal annealing on the charge trapping properties of SiN[sub x] films

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    The density of charge trapping centers in SiNx:H films deposited by plasma enhanced chemical vapor deposition is investigated as a function of film stoichiometry and postdeposition annealing treatments. In the as-deposited films, the defect density is observed to increase with an increasing N/Si ratio x in the range of 0.89–1.45, and to correlate with the N–H bond density. Following the annealing in the temperature range of 500– 800 °C, the defect density increases for all N/Si ratios, with the largest increase observed in the most Si rich samples. However, the defect density always remains highest in the most N rich films. The better charge storage ability suggests the N rich films are more suitable for the creation of negatively charged nitride films on solar cells.Financial support from the Australian Research Council LP0883613 is gratefully acknowledged

    Al2O3/TiO2 stack layers for effective surface passivation of crystalline silicon

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    For silicon surface passivation, we investigate stack layers consisting of a thin Al₂O₃ layer and a TiO₂capping layer deposited by means of thermal atomic layer deposition (ALD). In this work, we studied the influence of different thermal post-deposition treatments and film thickness for the activation of passivating ALD Al₂O₃ single layers and Al₂O₃/TiO₂ stack layers. Our experiments show a substantial improvement of the passivation for the Al₂O₃/TiO₂ stack layers compared to a thin single Al₂O₃ layer. For the stacks, especially with less than 10 nm Al₂O₃, a TiO₂capping layer results in a remarkably lower surface recombination. Effective fixed charge density of Al₂O₃/TiO₂ stack layers increases after TiO₂deposition and O₂ annealing. It is also demonstrated that the enhanced surface passivation can be mainly related to a remarkably low interface defect density of 1.1 × 10¹⁰ eV¯¹ cm¯², whereas post-TiO₂ heat treatment in O₂ ambience is not beneficial for the passivation of silicon, which is attributed to increasing interface defect density of stack layers.This project has been supported by the Australian Government through the Australian Solar Institute, part of the Clean Energy Initiative

    Modeling the charge decay mechanism in nitrogen-rich silicon nitride films

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    The stability of negative charge in nitrogen-rich silicon nitride films deposited by plasma-enhanced chemical vapor deposition is investigated by analyzing the influence of storage temperature, postdeposition thermal annealing, and the presence of a tunnel oxide. The results are compared to a charge decay model. Comparison of experimental and modeled results indicates that (i) the tunnel oxide is almost entirely responsible for charge retention in samples with an oxide-nitride-oxide (ONO) structure, with the trap properties playing an insignificant role; (ii) thermionic emission over the tunnel oxide barrier is the limiting charge decay mechanism; and (iii) thermal annealing of the films at 800 °C leads to an increase in the oxide-nitride barrier height by ∼0.22 eV , which results in a significant increase in the charge stability. Annealed ONO samples are predicted to maintain a negative charge density of >5×10¹² cm¯² for well in excess of 100 years at a storage temperature of 100 °C .Financial support from Australian Research Council Grant No. LP0883613 is gratefully acknowledged

    The role of interparticle heterogeneities in the selenization pathway of Cu Zn Sn S nanoparticle thin films a real time study

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    Real time energy dispersive X ray diffraction EDXRD analysis has been utilized to observe the selenization of Cu Zn Sn S nanoparticle films coated from three nanoparticle populations Cu and Sn rich particles roughly 5 nm in size, Zn rich nanoparticles ranging from 10 to 20 nm in diameter, and a mixture of both types of nanoparticles roughly 1 1 by mass , which corresponds to a synthesis recipe yielding CZTSSe solar cells with reported total area efficiencies as high as 7.9 . The EDXRD studies presented herein show that the formation of copper selenide intermediates during the selenization of mixed particle films can be primarily attributed to the small, Cu and Sn rich particles. Moreover, the formation of these copper selenide phases represents the first stage of the CZTSSe grain growth mechanism. The large, Zn rich particles subsequently contribute their composition to form micrometer sized CZTSSe grains. These findings enable further development of a previously proposed selenization pathway to account for the roles of interparticle heterogeneities, which in turn provides a valuable guide for future optimization of processes to synthesize high quality CZTSSe absorber layer

    Исследование возможностей фреймворка TensorFlow для прогнозирования временных рядов

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    Purpose:To present online scanner noise cancellation for speech acquired in functional magnetic resonance imaging (fMRI) studies.Materials and Methods:An online active noise cancellation method for speech acquired in fMRI studies was developed. The approach consists of two automated steps: 1) creation of an MR noise template in a short “test” fMRI scan; 2) application of the template for automatic recognition and subtraction of the MR noise from the acquired microphone signal during an fMRI study. The method was applied in an experimental paradigm where a subject and an investigator communicated in an interactive verbal generation task during fMRI.Results:By applying online active noise cancellation, the quality of the subject's speech was substantially improved. The present approach was found to be flexible, reliable, and easy to implement, providing a method for fMRI studies that investigate the neural correlates of interactive speech communication.Conclusion:Using online noise cancellation it is possible to improve the quality of acquired speech in fMRI. This approach may be recommended for interactive fMRI studies

    Combination of suberoylanilide hydroxamic acid with heavy ion therapy shows promising effects in infantile sarcoma cell lines

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    <p>Abstract</p> <p>Introduction</p> <p>The pan-HDAC inhibitor (HDACI) suberoylanilide hydroxamic acid (SAHA) has previously shown to be a radio-sensitizer to conventional photon radiotherapy (XRT) in pediatric sarcoma cell lines. Here, we investigate its effect on the response of two sarcoma cell lines and a normal tissue cell line to heavy ion irradiation (HIT).</p> <p>Materials and methods</p> <p>Clonogenic assays after different doses of heavy ions were performed. DNA damage and repair were evaluated by measuring γH2AX via flow-cytometry. Apoptosis and cell cycle analysis were also measured via flow cytometry. Protein expression of repair proteins, p53 and p21 were measured using immunoblot analysis. Changes of nuclear architecture after treatment with SAHA and HIT were observed in one of the sarcoma cell lines via light microscopy after staining towards chromatin and γH2AX.</p> <p>Results</p> <p>Corresponding with previously reported photon data, SAHA lead to an increase of sensitivity to heavy ions along with an increase of DSB and apoptosis in the two sarcoma cell lines. In contrast, in the osteoblast cell line (hFOB 1.19), the combination of SAHA and HIT showed a significant radio-protective effect. Laser scanning microscopy revealed no significant morphologic changes after HIT compared to the combined treatment with SAHA. Immunoblot analysis revealed no significant up or down regulation of p53. However, p21 was significantly increased by SAHA and combination treatment as compared to HIT only in the two sarcoma cell lines - again in contrast to the osteoblast cell line. Changes in the repair kinetics of DSB p53-independent apoptosis with p21 involvement may be part of the underlying mechanisms for radio-sensitization by SAHA.</p> <p>Conclusion</p> <p>Our <it>in vitro </it>data suggest an increase of the therapeutic ratio by the combination of SAHA with HIT in infantile sarcoma cell lines.</p
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