Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates

When lattice matched to GaN, the AlInN ternary alloy has a refractive index ~7% lower than that of GaN. This characteristic can be exploited to perform in situ reflectometry during epitaxial growth of GaN-based multilayer structures on free-standing GaN substrates, by insertion of a suitable Al0.82In0.18N layer. The real-time information on growth rates and cumulative layer thicknesses thus obtainable is particularly valuable in the growth of optical resonant cavity structures. We illustrate this capability with reference to the growth of InGaN/GaN multiple quantum-well structures, including a doubly periodic structure with relatively thick GaN spacer layers between groups of wells. Al0.82In0.18N insertion layers can also assist in the fabrication of resonant cavity structures in postgrowth processing, for example, acting as sacrificial layers in a lift-off process exploiting etch selectivity between Al0.82In0.18N and GaN

Optical spectroscopy of gan microcavities with thicknesses controlled using a plasma etch-back

The effect of an etch-back step to control the cavity length within GaN-based microcavities formed between two dielectric Bragg mirrors was investigated using photoluminescence and reflectivity. The structures are fabricated using a combination of a laser lift-off technique to separate epitaxial III-N layers from their sapphire substrates and electron-beam evaporation to deposit silica/zirconia multilayer mirrors. The photoluminescence measurements reveal cavity modes from both etched and nonetched microcavities. Similar cavity finesses are measured for 2.0 and 0.8 mm GaN cavities fabricated from the same wafer, indicating that the etchback has had little effect on the microcavity quality. For InGaN quantum well samples the etchback is shown to allow controllable reduction of the cavity length. Two etch steps of 100 nm are demonstrated with an accuracy of approximately 5%. The etchback, achieved using inductively coupled plasma and wet chemical etching, allows removal of the low-quality GaN nucleation layer, control of the cavity length, and modification of the surface resulting from lift-off

(In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum wells, grown on GaN substrates and bounded by two dielectric mirrors, have been fabricated by two different routes: one using laser lift-off to process structures grown on GaN-on-sapphire templates and the second using freestanding GaN substrates, which are initially processed by mechanical thinning. Both exploit the properties of an Al0.83In0.17N layer, lattice matched to the GaN substrate and spacer layers. In both cases cavity quality factors >400 are demonstrated by measurements of the cavity-filtered room-temperature excitonic emission near 410 nm

Measurement of species flux from a bubble using an acousto-electrochemical technique

An acousto-electrochemical technique is presented which, for the first time, offers the potential for measuring the flux of dissolved species in a liquid resulting from bubbles of a specific chosen size in the population. Laboratory trials are presented, but the device itself was damaged in the surf zone and no data was obtained from the ocean deployment. Nevertheless, the preceding laboratory tests demonstrate the viability of the technique. The device responds to perturbations of the fluid around a small electrode. Three such sources of motion must be characterised if it is to achieve the objective stated above. First, the perturbations resulting form the translatory motions of bubbles in the liquid. To obtain bubble radius resolution in the measurement of mass flux, however, it is necessary to apply to driving (‘pump’) sound field. Bubbles close to resonance will, in addition to a translatory motion, impart to the liquid a component of mass flux at the pump frequency. This is detected. However to show that this is the result of bubble wall pulsation, and not someother coupling, the amplitude of the pump field is increased until the electrochemical sensor detects Faraday waves on the bubble wall. Not only does this prove the relation between mass flux to bubble wall motion, it provides a second route by which the radius-resolved component of mass flux might be identified. In these preliminary laboratory tests, electrochemical detection of these motions was achieved through the observation of current produced by the reduction of a suitable redox agent present within the liquid phase of the solution employed. Preparations were made to obtain preliminary data from the Hurst Spit 2000 surf zone trial, but the device was damaged by the environment

Anesthesia and Patients with Congenital Hyposensitivity to Pain

Background: Congenital hyposensitivity to pain or hereditary sensory and autonomic neuropathy represents a variety of disorders characterized by decreased perception of nociception, loss of other modalities of sensation, and variable expression of autonomic dysfunction. Sensory loss, especially that of pain, is associated with self-mutilations that may require frequent operations. Little is known about the safety of anesthesia for these patients. Methods: The authors performed a computerized search of the Mayo Clinic medical records database between January 1996 and November 2005 for patients with congenital hyposensitivity to pain and related disorders who underwent general anesthesia. Medical records were reviewed for demographics, anesthetic techniques and agents, use of opioids, and perioperative complications. In addition, the authors conducted a comprehensive review of the literature to summarize the current knowledge regarding anesthesia for patients with congenital hyposensitivity to pain, and compared it with the patients with hyposensitivity to pain identified at the Mayo Clinic. Results: The authors identified seven patients with hereditary sensory and autonomic neuropathy II, IV, or V and undefined variants of congenital pain hyposensitivity who generated 17 anesthesia records: 12 for orthopedic operations, 3 for sural nerve biopsies, and 2 for ophthalmologic procedures. In all patients, standard doses of volatile agents were used during anesthesia. Small amounts of opioids were used during the course of eight operations. Most patients experienced mild hypothermia (lowest temperature 34.7°C), and none experienced hyperthermia. All patients were hemodynamically stable during otherwise uneventful anesthesia. During recovery from anesthesia, opioids were given to only one patient, a single dose of 1 mg morphine. Even after major orthopedic operations, the patient did not require additional analgesia. Conclusions: The patients with profound congenital hyposensitivity to pain underwent anesthesia without any adverse events. The authors found that despite reduced pain perception, the requirements for volatile anesthetics were within the expected range for population with normal pain perception, but they did not require opioids postoperatively. Intraoperative mild hypothermia was easily managed by adjustment of environmental temperature

Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers

This speech was presented to the 2005 Annual Conference of the British Association for Crystal Growth, held in Sheffield on Sunday 4 - Tuesday 6 September 2005. The presentation focused on the design and growth of microcavities and the roles of AlInN layer in post-growth processing

Solution of a one-dimensional stochastic model with branching and coagulation reactions

We solve an one-dimensional stochastic model of interacting particles on a chain. Particles can have branching and coagulation reactions, they can also appear on an empty site and disappear spontaneously. This model which can be viewed as an epidemic model and/or as a generalization of the {\it voter} model, is treated analytically beyond the {\it conventional} solvable situations. With help of a suitably chosen {\it string function}, which is simply related to the density and the non-instantaneous two-point correlation functions of the particles, exact expressions of the density and of the non-instantaneous two-point correlation functions, as well as the relaxation spectrum are obtained on a finite and periodic lattice.Comment: 5 pages, no figure. To appear as a Rapid Communication in Physical Review E (September 2001

Surfactant-mediated growth of semiconductor materials

During epitaxial growth of semiconducting materials using either molecular beam epitaxy or organometallic vapour deposition, the addition of a surfactant can enhance two-dimensional layer-by-layer growth. This modified growth process is now called the surfactant-mediated growth (SMG) method. It has had an important impact on the development of technologically important materials in device applications, such as heterostructures used for laser applications. Recent developments that use surfactants to improve doping profiles in semiconducting systems and antisurfactants (ASMG) to grow quantum dots further ensure that SMG/ASMG will play a major role in the future development of optoelectronic materials and nanoparticles. In this paper, we review important earlier experimental work involving the SMG method as well as some recent developments. Theoretical work involving first-principles methods and kinetic Monte Carlo simulations are discussed but confined only to the surfactant effect

Probing the reconstructed Fermi surface of antiferromagnetic BaFe2As2 in one domain

A fundamental part of the puzzle of unconventional superconductivity in the Fe-based superconductors is the understanding of the magnetic and nematic instabilities of the parent compounds. The issues of which of these can be considered the leading instability, and whether weak- or strong-coupling approaches are applicable, are both critical and contentious. Here, we revisit the electronic structure of BaFe2As2 using angle-resolved photoemission spectroscopy (ARPES). Our high-resolution measurements of samples “detwinned” by the application of a mechanical strain reveal a highly anisotropic 3D Fermi surface in the low-temperature antiferromagnetic phase. By comparison of the observed dispersions with ab initio calculations, we argue that overall it is magnetism, rather than orbital/nematic ordering, which is the dominant effect, reconstructing the electronic structure across the Fe 3d bandwidth. Finally, using a state-of-the-art nano-ARPES system, we reveal how the observed electronic dispersions vary in real space as the beam spot crosses domain boundaries in an unstrained sample, enabling the measurement of ARPES data from within single antiferromagnetic domains, and showing consistence with the effective mono-domain samples obtained by detwinning