Steady-state thermally annealed GaAs with room-temperature-implanted Si

Semi-insulating Cr-doped single-crystal GaAs samples were implanted at room temperature with 300-keV Si ions in the dose range of (0.17–2.0)×1015 cm–2 and were subsequently steady-state annealed at 900 and 950°C for 30 min in a H2 ambient with a Si3N4 coating. Differential Hall measurements showed that an upper threshold of about 2×1018/cm3 exists for the free-electron concentration. The as-implanted atomic-Si profile measured by SIMS follows the theoretical prediction, but is altered during annealing. The Cr distribution also changes, and a band of dislocation loops ~2–3 kÅ wide is revealed by cross-sectional TEM at a mean depth of Rp~3 kÅ. Incomplete electrical activation of the Si is shown to be the primary cause for the effect

Pulsed electron beam induced recrystallization and damage in GaAs

Single-pulse electron-beam irradiations of 300-keV 10^(15)Kr+/cm^2 or 300-keV 3×10^(12)Se+/cm^2 implanted layers in unencapsulated GaAs are studied as a function of the electron beam fluence. The electron beam pulse had a mean electron energy of ~-20 keV and a time duration of ~-10^(–7) s. Analyses by means of MeV He + channeling and TEM show the existence of narrow fluence window (0.4–0.7 J/cm^2) within which amorphous layers can be sucessfully recrystallized, presumably in the liquid phase regime. Too high a fluence produces extensive deep damage and loss of As

Interaction Effects Among Two-Dimensional Electrons and Holes

We report large logarithmic corrections to the conductivity of two-dimensional electrons and holes in GaSb-InAs-GaSb double heterostructures. From ∼ 40 mK to 1 K, the conductivity increased with the logarithm of the temperature but with a slope as much as 30 times larger than estimated from the theories of weak localization and carrier interaction. The discrepancy apparently results from electron-hole interactions not included in the theory

Interaction effects among two-dimensional electrons and holes

We report large logarithmic corrections to the conductivity of two-dimensional electrons and holes in GaSb-InAs-GaSb double heterostructures. From ∼ 40 mK to 1 K, the conductivity increased with the logarithm of the temperature but with a slope as much as 30 times larger than estimated from the theories of weak localization and carrier interaction. The discrepancy apparently results from electron-hole interactions not included in the theory

Interaction Effects Among Two-Dimensional Electrons and Holes

We report large logarithmic corrections to the conductivity of two-dimensional electrons and holes in GaSb-InAs-GaSb double heterostructures. From ∼ 40 mK to 1 K, the conductivity increased with the logarithm of the temperature but with a slope as much as 30 times larger than estimated from the theories of weak localization and carrier interaction. The discrepancy apparently results from electron-hole interactions not included in the theory

Quantized Transport in Graphene p-n Junctions in Magnetic Field

Recent experimental work on locally gated graphene layers resulting in p-n junctions have revealed quantum Hall effect in their transport behavior. We explain the observed conductance quantization which is fractional in the bipolar regime and integer in the unipolar regime in terms of quantum Hall edge modes propagating along and across the p-n interface. In the bipolar regime the electron and hole modes can mix at the p-n boundary, leading to current partition and quantized shot noise plateaus similar to those of conductance, while in the unipolar regime transport is noiseless. These quantum Hall phenomena reflect the massless Dirac character of charge carriers in graphene, with particle-hole interplay manifest in mode mixing and noise in the bipolar regime.Comment: 4 pages, 3 figures, available online at: http://www.sciencemag.org/cgi/content/abstract/114467

Phase coherent transport in (Ga,Mn)As

Quantum interference effects and resulting quantum corrections of the conductivity have been intensively studied in disordered conductors over the last decades. The knowledge of phase coherence lengths and underlying dephasing mechanisms are crucial to understand quantum corrections to the resistivity in the different material systems. Due to the internal magnetic field and the associated breaking of time-reversal symmetry quantum interference effects in ferromagnetic materials have been scarcely explored. Below we describe the investigation of phase coherent transport phenomena in the newly discovered ferromagnetic semiconductor (Ga,Mn)As. We explore universal conductance fluctuations in mesoscopic (Ga,Mn)As wires and rings, the Aharonov-Bohm effect in nanoscale rings and weak localization in arrays of wires, made of the ferromagnetic semiconductor material. The experiments allow to probe the phase coherence length L_phi and the spin flip length L_SO as well as the temperature dependence of dephasing.Comment: 22 pages, 10 figure

User quality of experience of mulsemedia applications

User Quality of Experience (QoE) is of fundamental importance in multimedia applications and has been extensively studied for decades. However, user QoE in the context of the emerging multiple-sensorial media (mulsemedia) services, which involve different media components than the traditional multimedia applications, have not been comprehensively studied. This article presents the results of subjective tests which have investigated user perception of mulsemedia content. In particular, the impact of intensity of certain mulsemedia components including haptic and airflow on user-perceived experience are studied. Results demonstrate that by making use of mulsemedia the overall user enjoyment levels increased by up to 77%

Preliminary design characteristics of a subsonic business jet concept employing an aspect ratio 25 strut braced wing

The advantages of replacing the conventional wing on a transatlantic business jet with a larger, strut braced wing of aspect ratio 25 were evaluated. The lifting struts reduce both the induced drag and structural weight of the heavier, high aspect ratio wing. Compared to the conventional airplane, the strut braced wing design offers significantly higher lift to drag ratios achieved at higher lift coefficients and, consequently, a combination of lower speeds and higher altitudes. The strut braced wing airplane provides fuel savings with an attendant increase in construction costs