Design of Compact BPF and Planar Diplexer for UMTS using Embedded-scheme Resonator

A compact planar diplexer utilizing embedded-scheme resonator (ESR) is designed for universal mobile telecommunications system (UMTS). The ESR is formed by embedding interdigital resonators into an open loop resonator. Based on the proposed ESR, a narrowband bandpass filter suitable for diplexer design is proposed, fabricated and measured. The measured results demonstrate that the filter exhibits good transmission properties within band and high frequency selectivity. The rectangular area occupied by the filter has overall dimensions only 0.086λg by 0.105λg, promises good potential in wireless communication systems that require compact size and high encapsulation quality. Then, a compact planar diplexer operating at the TX-band of 1920-1980MHz and the RX-band of 2110-2170MHz, which is composed of a meander T-junction and two filters initially separately designed, is synthesized, simulated and measured. Both the simulated and measured results indicate that satisfied impedance matching and good isolation between two paths have been achieved

Ballistic spin transport through electronic stub tuners: spin precession, selection, and square-wave transmission

Ballistic spin transport is studied through electronic tuners with double stubs attached to them. The spins precess due to the spin-orbit interaction. Injected polarized spins can exit the structure polarized in the opposite direction. A nearly square-wave spin transmission, with values 1 and 0, can be obtained using a periodic system of symmetric stubs and changing their length or width. The gaps in the transmission can be widened using asymmetric stubs. An additional modulation is obtained upon combining stub structures with different values of the spin-orbit strength.Comment: 3 pages, 4 figure

Wannier–Koopmans method calculations for transition metal oxide band gaps

The widely used density functional theory (DFT) has a major drawback of underestimating the band gaps of materials. Wannier–Koopmans method (WKM) was recently developed for band gap calculations with accuracy on a par with more complicated methods. WKM has been tested for main group covalent semiconductors, alkali halides, 2D materials, and organic crystals. Here we apply the WKM to another interesting type of material system: the transition metal (TM) oxides. TM oxides can be classified as either with d0 or d10 closed shell occupancy or partially occupied open shell configuration, and the latter is known to be strongly correlated Mott insulators. We found that, while WKM provides adequate band gaps for the d0 and d10 TM oxides, it fails to provide correct band gaps for the group with partially occupied d states. This issue is also found in other mean-field approaches like the GW calculations. We believe that the problem comes from a strong interaction between the occupied and unoccupied d-state Wannier functions in a partially occupied d-state system. We also found that, for pseudopotential calculations including deep core levels, it is necessary to remove the electron densities of these deep core levels in the Hartree and exchange–correlation energy functional when calculating the WKM correction parameters for the d-state Wannier functions

Detector measures power in 50 to 30,000 GHz radiation band

Broadband power detector assembly measures electromagnetic radiation in the 50 to 30,000 GHz band. The assembly includes a matched pair of detectors which incorporate thin-film radiation absorbers. The detector is effective with either coherent or incoherent radiation