Stretchable Self-Healable Semiconducting Polymer Film for Active-Matrix Strain-Sensing Array

Skin-like sensory devidces shoud be stretchable and self-healable to meet the demands for future electronic skin applications. Despite recent notable advances in skin-inspired electronic materials, it remains challenging to confer these desired functionalities to an active semiconductor. Here, we report a strain-sensitive, stretchable, and autonomously self-healable semiconducting film achieved through blending of a polymer semiconductor and a self-healable elastomer, both of which are dynamically cross-linked by metal coordination. We observed that by controlling the percolation threshold of the polymer semiconductor, the blend film became strain sensitive, with a gauge factor of 5.75 x 105 at 100% strain in a stretchable transistor. The blend film is also highly stretchable (fracture strain, \u3e1300%) and autonomously self-healable at room temperature. We proceed to demonstrate a fully integrated 5 x 5 stretchable active-matrix transistor sensor array capable of detecting strain distribution through surface deformation

Low-voltage polymer transistors on hydrophobic dielectrics and surfaces

A set of unique features, including large-area solution processing on flexible and stretchable substrates, make polymer semiconductors a promising material choice for a range of state-of-the-art applications in electronics, optoelectronics and sensing. Yet, an inherent weakness of polymer semiconductors remains their low dielectric constants, increasing their susceptibility toward unscreened dipoles. These dipoles are particularly prevalent at polymer-dielectric interfaces with high- k dielectrics, which are essential for the operation of devices such as low-voltage field-effect transistors. This shortcoming can be addressed by using self-assembled monolayers (SAMs) to passivate surfaces that impact charge transport. However, SAM-treatment also increases the hydrophobicity of surfaces and therefore poses a challenge for subsequent solution processing steps and complex packaging of devices. Here, we report low-voltage polymer transistors processed by spin coating of the polymer semiconductors on highly hydrophobic SAM-treated aluminum and hafnium oxide dielectrics (contact angles >100) through fine-tuning of the interfacial tension at the polymer-dielectric interface. This approach enables the processing and detailed characterization of near-amorphous (indacenodithiophene- co benzothiadiazole) as well as semicrystalline ( poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)diketopyrrolo[3,4-c]pyrrole-1,4-dione-alt-thieno[3,2-b]thiophen )) polymer semiconductors. We demonstrate polymer transistors that exhibit high on-currents and field-independent, charge carrier mobilities of 0.8 cm ^2 V ^−1 s ^−1 at low operating voltages (<3 V)

Enhancing Molecular Alignment and Charge Transport of Solution-Sheared Semiconducting Polymer Films by the Electrical-Blade Effect

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Controlling polymer chain alignment through processing is a means of tuning the charge transport of solution-based conjugated polymers. In this work, a processing strategy is proposed in which an external electric field (E-field) is applied to the coating blade (E-blade) to align polymer chain during solution-shearing, a meniscus-guided coating technique. A theoretical model based on dielectrophoresis quantitatively describes and predicts the alignment process and is used to guide the selection of the optimal conditions of the applied E-field. Using these conditions, more than twofold increase in chain alignment is observed for E-bladed thin films of a diketopyrrolopyrrole (DPP) semiconducting polymer without affecting other morphological aspects such as film thickness, film coverage, or fiber-like aggregation. Organic field effect transistors based on the E-bladed DPP polymer are fabricated at ambient conditions and over areas of a few cm2. They display a threefold improvement in their mobilities and a strong enhancement in charge transport anisotropy compared to films prepared without E-field. These results reveal a synergistic alignment effect from both the solution-shearing process and the applied E-field, and introduce a novel and general approach to control the morphology and the electrical properties of solution-coated conjugated polymer thin films.status: publishe

Tuning the Cross-Linker Crystallinity of a Stretchable Polymer Semiconductor

The cross-linking of conjugated polymers has been demonstrated to be an effective strategy to improve its elastic properties to give deformable semiconductors for plastic electronics. While there have been extensive studies of the structural requirements of the polymer host for good film ductility, no work to date has focused on the relevance of the structural design or chemistry of these cross-linker additives. In this study, urethane groups and tertiary carbon atoms are inserted into the alkyl backbone of perfluorophenyl azide-based cross-linkers to investigate the importance of cross-linker crystallinity with respect to polymer morphology and hence mechanical and electrical properties. Linear cross-linkers with hydrogen bonding from urethane groups readily phase separate and recrystallize in the polymer network to form cross-linked domains that obstruct the strain distribution of the polymer film. Branch cross-linkers with tertiary carbon on the other hand form an evenly cross-linked network in the polymer blend stemming from excellent miscibility and show a 4-fold increase in fracture strain. Furthermore, a stable hole mobility of 0.2 cm2 V–1 s–1 is achieved up to ε = 100%, and a stable hole mobility of 0.1 cm2 V–1 s–1 after 2000 cycles of ε = 25% on fully stretchable organic field-effect transistors

Nonhalogenated Solvent Processable and Printable High-Performance Polymer Semiconductor Enabled by Isomeric Nonconjugated Flexible Linkers

status: publishe

Tuning Conjugated Polymer Chain Packing for Stretchable Semiconductors

In order to apply polymer semiconductors to stretchable electronics, they need to be easily deformed under strain without being damaged. A small number of conjugated polymers, typically with semicrystalline packing structures, have been reported to exhibit mechanical stretchability. Herein, a method is reported to modify polymer semiconductor packing-structure using a molecular additive, dioctyl phthalate (DOP), which is found to act as a molecular spacer, to be inserted between the amorphous chain networks and disrupt the crystalline packing. As a result, large-crystal growth is suppressed while short-range aggregations of conjugated polymers are promoted, which leads to an improved mechanical stretchability without affecting charge-carrier transport. Due to the reduced conjugated polymer intermolecular interactions, strain-induced chain alignment and crystallization are observed. By adding DOP to a well-known conjugated polymer, poly[2,5-bis(4-decyltetradecyl)pyrrolo[3,4-c]pyrrole-1,4-(2H,5H)-dione-(E)-1,2-di(2,2′-bithiophen-5-yl)ethene] (DPPTVT), stretchable transistors are obtained with anisotropic charge-carrier mobilities under strain, and stable current output under strain up to 100%

Characterization of Hydrogen Bonding Formation and Breaking in Semiconducting Polymers under Mechanical Strain

status: publishe

Taming Charge Transport in Semiconducting Polymers With Branched Alkyl Side Chains

The solid-state packing and polymer orientation relative to the substrate are key properties to control in order to achieve high charge carrier mobilities in organic field effect transistors (OFET). Intuitively, shorter side chains are expected to yield higher charge carrier mobilities because of a denser solid state packing motif and a higher ratio of charge transport moieties. However our findings suggest that the polymer chain orientation plays a crucial role in high-performing diketopyrrolopyrrole-based polymers. By synthesizing a series of DPP-based polymers with different branched alkyl side chain lengths, it is shown that the polymer orientation depends on the branched alkyl chain lengths and that the highest carrier mobilities are obtained only if the polymer adopts a mixed face-on/edge-on orientation, which allows the formation of 3D carrier channels in an otherwise edge-on-oriented polymer chain network. Time-of-flight measurements performed on the various polymer films support this hypothesis by showing higher out-of-plane carrier mobilities for the partially face-on-oriented polymers. Additionally, a favorable morphology is mimicked by blending a face-on polymer into an exclusively edge-on oriented polymer, resulting in higher charge carrier mobilities and opening up a new avenue for the fabrication of high performing OFET devices

Fully stretchable active-matrix organic light-emitting electrochemical cell array

To realize a skin-like display for human-electronics interfaces, intrinsically stretchable light-emitting, transistor and device interconnect components are needed. Here, the authors report a fully stretchable transistor driven active-matrix organic light-emitting electrochemical cell array

An Intrinsically Stretchable High‐Performance Polymer Semiconductor with Low Crystallinity

For wearable and implantable electronics applications, developing intrinsically stretchable polymer semiconductor is advantageous, especially in the manufacturing of large‐area and high‐density devices. A major challenge is to simultaneously achieve good electrical and mechanical properties for these semiconductor devices. While crystalline domains are generally needed to achieve high mobility, amorphous domains are necessary to impart stretchability. Recent progresses in the design of high‐performance donor–acceptor polymers that exhibit low degrees of energetic disorder, while having a high fraction of amorphous domains, appear promising for polymer semiconductors. Here, a low crystalline, i.e., near‐amorphous, indacenodithiophene‐co‐benzothiadiazole (IDTBT) polymer and a semicrystalline thieno[3,2‐b ]thiophene‐diketopyrrolopyrrole (DPPTT) are compared, for mechanical properties and electrical performance under strain. It is observed that IDTBT is able to achieve both a high modulus and high fracture strain, and to preserve electrical functionality under high strain. Next, fully stretchable transistors are fabricated using the IDTBT polymer and observed mobility ≈0.6 cm2 V−1 s−1 at 100% strain along stretching direction. In addition, the morphological evolution of the stretched IDTBT films is investigated by polarized UV–vis and grazing‐incidence X‐ray diffraction to elucidate the molecular origins of high ductility. In summary, the near‐amorphous IDTBT polymer signifies a promising direction regarding molecular design principles toward intrinsically stretchable high‐performance polymer semiconductor