41 research outputs found
Charge Pumping Through a Single Donor Atom
Presented in this paper is a proof-of-concept for a new approach to single
electron pumping based on a Single Atom Transistor (SAT). By charge pumping
electrons through an isolated dopant atom in silicon, precise currents of up to
160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic
field applied, and only when one barrier is addressed by sinusoidal voltage
cycles.Comment: 14 pages, 10 figures, few changes in the text and in figure 8, New J.
Phys. (2014) at pres
A tunable, dual mode field-effect or single electron transistor
A dual mode device behaving either as a field-effect transistor or a single
electron transistor (SET) has been fabricated using silicon-on-insulator metal
oxide semiconductor technology. Depending on the back gate polarisation, an
electron island is accumulated under the front gate of the device (SET regime),
or a field-effect transistor is obtained by pinching off a bottom channel with
a negative front gate voltage. The gradual transition between these two cases
is observed. This dual function uses both vertical and horizontal tunable
potential gradients in non-overlapped silicon-on-insulator channel
A hybrid metal/semiconductor electron pump for quantum metrology
Electron pumps capable of delivering a current higher than 100pA with
sufficient accuracy are likely to become the direct mise en pratique of the
possible new quantum definition of the ampere. Furthermore, they are essential
for closing the quantum metrological triangle experiment which tests for
possible corrections to the quantum relations linking e and h, the electron
charge and the Planck constant, to voltage, resistance and current. We present
here single-island hybrid metal/semiconductor transistor pumps which combine
the simplicity and efficiency of Coulomb blockade in metals with the
unsurpassed performances of silicon switches. Robust and simple pumping at
650MHz and 0.5K is demonstrated. The pumped current obtained over a voltage
bias range of 1.4mV corresponds to a relative deviation of 5e-4 from the
calculated value, well within the 1.5e-3 uncertainty of the measurement setup.
Multi-charge pumping can be performed. The simple design fully integrated in an
industrial CMOS process makes it an ideal candidate for national measurement
institutes to realize and share a future quantum ampere
Single donor ionization energies in a nanoscale CMOS channel
One consequence of the continued downwards scaling of transistors is the
reliance on only a few discrete atoms to dope the channel, and random
fluctuations of the number of these dopants is already a major issue in the
microelectonics industry. While single-dopant signatures have been observed at
low temperature, studying the impact of only one dopant up to room temperature
requires extremely small lengths. Here, we show that a single arsenic dopant
dramatically affects the off-state behavior of an advanced microelectronics
field effect transistor (FET) at room temperature. Furthermore, the ionization
energy of this dopant should be profoundly modified by the close proximity of
materials with a different dielectric constant than the host semiconductor. We
measure a strong enhancement, from 54meV to 108meV, of the ionization energy of
an arsenic atom located near the buried oxide. This enhancement is responsible
for the large current below threshold at room temperature and therefore
explains the large variability in these ultra-scaled transistors. The results
also suggest a path to incorporating quantum functionalities into silicon CMOS
devices through manipulation of single donor orbitals
Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices’ Variability?
AbstractIt is very important to study variability of nanodevices because the inability to produce large amounts of identical nanostructures is eventually a bottleneck for any application. In fact variability is already a major concern for CMOS circuits. In this work we report on the variability of dozens of silicon single-electron transistors (SETs). At room temperature their variability is compared with the variability of the most advanced CMOS FET i.e. the ultra thin Silicon-on-Insulator Multiple gate FET (UT SOI MuGFET). We found that dopants diffused from Source –Drain into the edge of the undoped channel are the main source of variability. This emphasizes the role of extrinsic factors like the contact junctions for variability of any nanodevice
Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor
We report the dispersive readout of the spin state of a double quantum dot
formed at the corner states of a silicon nanowire field-effect transistor. Two
face-to-face top-gate electrodes allow us to independently tune the charge
occupation of the quantum dot system down to the few-electron limit. We measure
the charge stability of the double quantum dot in DC transport as well as
dispersively via in-situ gate-based radio frequency reflectometry, where one
top-gate electrode is connected to a resonator. The latter removes the need for
external charge sensors in quantum computing architectures and provides a
compact way to readout the dispersive shift caused by changes in the quantum
capacitance during interdot charge transitions. Here, we observe Pauli
spin-blockade in the high-frequency response of the circuit at finite magnetic
fields between singlet and triplet states. The blockade is lifted at higher
magnetic fields when intra-dot triplet states become the ground state
configuration. A lineshape analysis of the dispersive phase shift reveals
furthermore an intradot valley-orbit splitting of 145 eV.
Our results open up the possibility to operate compact CMOS technology as a
singlet-triplet qubit and make split-gate silicon nanowire architectures an
ideal candidate for the study of spin dynamics
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
Thermal Laser Attack and High Temperature Heating on HfO2-based OxRAM Cells
International audienceThe last 10 years have seen the rise of new NVM technologies as alternative solutions to Flash technology, which is facing downsizing issues. Apart from offering higher performance than the state of the art of Flash, one of their key features is lower power consumption, which makes them even more suitable for the IoT era. But one of the other main concerns regarding IoT is data security, which is yet to be evaluated for emerging NVM. Our previous work aimed at putting under test the integrity of HfO 2 based resistive RAM (OxRAM cells). Bit-set occurrences were found after thermal laser attacks. This present work investigates the difference in behaviour when a selector is added to the resistive element, thanks to attack on different stacks. The results obtained give interesting tracks for the design of secure OxRAM-based ICs. It also studies the kinetic role of temperature through heating experiments