INFLUENCE OF PLASMON-PHONON COUPLING ON THE ELECTRON-IMPURITY INTERACTION IN THE FREE-CARRIER ABSORPTION*

An experimental and theoretical evidence that the electron-impurity scattering is modified in the presence of the electromagnetic field oscillating with the frequency corresponding to the optical phonon energy is given. The coupled plasmon-phonon mode related feature in the reflectivity spectrum can be used to determine the upper edge of the LO phonon frequency band in highly doped materials. PACS numbers: 71.45. Gm, 78.30.Fs, 72.30.+q The infrared absorption in semiconductors is mainly caused by phonons and free carriers. In many cases these mechanisms can be treated separately, each of them giving its own contribution to the optical dielectric function. The simple Drude-Zener theory assuming frequency independent damping conStants of free-carrier plasma and phonon excitations, satisfactorily describes most of the experimental reflectivity and transmission spectra in the infrared. A deviation from thiS model can be expected when the light frequency approaches the optical phonon energy band. Strong mixing of the electron plasma and polar phonon modes leading to the collective motion of electrons and lattice ions causes a significant modification of the effective scattering of electrons by impurities Most studies of the role of the dynamic screening in the free-carrier absorption were devoted to the question of plasmon excitation in the process of electron-impurity scattering (for the references see, e.g.

Interlayer Exchange Coupling in (Ga,Mn)As-based Superlattices

The interlayer coupling between (Ga,Mn)As ferromagnetic layers in all-semiconductor superlattices is studied theoretically within a tight-binding model, which takes into account the crystal, band and magnetic structure of the constituent superlattice components. It is shown that the mechanism originally introduced to describe the spin correlations in antiferromagnetic EuTe/PbTe superlattices, explains the experimental results observed in ferromagnetic semiconductor structures, i.e., both the antiferromagnetic coupling between ferromagnetic layers in IV-VI (EuS/PbS and EuS/YbSe) superlattices as well as the ferromagnetic interlayer coupling in III-V ((Ga,Mn)As/GaAs) multilayer structures. The model allows also to predict (Ga,Mn)As-based structures, in which an antiferromagnetic interlayer coupling could be expected.Comment: 4 pages, 3 figure

(Ga,Mn)As based superlattices and the search for antiferromagnetic interlayer coupling

Antiferromagnetic interlayer coupling in dilute magnetic semiconductor superlattices could result in the realisation of large magnetoresistance effects analogous to the giant magnetoresistance seen in metallic multilayer structures. In this paper we use a mean-field theory of carrier induced ferromagnetism to explore the multidimensional parameter space available in (Ga,Mn)As based superlattice systems. Based on these investigations we examine the feasibility of creating a superlattice that exhibits antiferromagnetic coupling and suggest potentially viable recipes.Comment: 11 pages, 9 figure

Ferromagnetic GaMnAs/GaAs superlattices - MBE growth and magnetic properties

We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 \AA), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 \AA). While previous reports state that GaMnAs layers thinner than 50 \AA are paramagnetic in the whole Mn composition range achievable using MBE growth (up to 8% Mn), we have found that short period superlattices exhibit a paramagnetic-to-ferromagnetic phase transition with a transition temperature which depends on both the thickness of the magnetic GaMnAs layer and the nonmagnetic GaAs spacer. The neutron scattering experiments have shown that the magnetic layers in superlattices are ferromagnetically coupled for both thin (below 50 \AA) and thick (above 50 \AA) GaMnAs layers.Comment: Proceedings of 4th International Workshop on Molecular Beam Epitaxy and Vapour Phase Epitaxy Growth Physics and Technology, September 23 - 28 (2001), Warszawa, Poland, to appear in Thin Solid Films. 24 pages, 8 figure

FREE-CARRIER PLASMONS AS A NOVEL TOOL IN SEMICONDUCTOR PHYSICS*

It is demonstrated that free-carrier plasmons, being well defined collective excitations of the electron gas in the range of small wave vectors, can serve as a sensitive tool to investigate the optical processes related to the small momentum transfers. As an example the system HgSe:Fe is analysed both experimentally and theoretically. It is well known that the excitation of the free-carrier plasma in the light absorption process is possible only in the presence of defects breaking the translational invariance of the system. Due to the overall momentum conservation requirement there must exist a momentum source to make the photon absorption *This work is supported in part by CPBP 01.06. (141

Ferromagnetism in Diluted Magnetic Semiconductor Heterojunction Systems

Diluted magnetic semiconductors (DMSs), in which magnetic elements are substituted for a small fraction of host elements in a semiconductor lattice, can become ferromagnetic when doped. In this article we discuss the physics of DMS ferromagnetism in systems with semiconductor heterojunctions. We focus on the mechanism that cause magnetic and magnetoresistive properties to depend on doping profiles, defect distributions, gate voltage, and other system parameters that can in principle be engineered to yield desired results.Comment: 12 pages, 7 figures, review, special issue of Semicon. Sci. Technol. on semiconductor spintronic

The nature of the intranight variability of radio-quiet quasars

We select a sample of 10 radio-quiet quasars with confirmed intranight optical variability and with available X-ray data. We compare the variability properties and the broad band spectral constraints to the predictions of intranight variability by three models: (i) irradiation of an accretion disk by a variable X-ray flux (ii) an accretion disk instability (iii) the presence of a weak blazar component. We concluded that the third model, e.g. the blazar component model, is the most promising if we adopt a cannonball model for the jet variable emission. In this case, the probability of detecting the intranight variability is within 20-80%, depending on the ratio of the disk to the jet optical luminosity. Variable X-ray irradiation mechanism is also possible but only under additional requirement: either the source should have a very narrow Hbeta line or occasional extremely strong flares should appear at very large disk radii.Comment: MNRAS (in press

Definitive Evidence of Interlayer Coupling Between (Ga,Mn)As Layers Separated by a Nonmagnetic Spacer

We have used polarized neutron reflectometry to study the structural and magnetic properties of the individual layers in a series of (Al,Be,Ga)As/(Ga,Mn)As/GaAs/(Ga,Mn)As multilayer samples. Structurally, we observe that the samples are virtually identical except for the GaAs spacer thickness (which varies from 3-12 nm), and confirm that the spacers contain little or no Mn. Magnetically, we observe that for the sample with the thickest spacer layer, modulation doping by the(Al,Be,Ga)As results in (Ga,Mn)As layers with very different temperature dependent magnetizations. However, as the spacer layer thickness is reduced, the temperature dependent magnetizations of the top an bottom (Ga,Mn)As layers become progressively more similar - a trend we find to be independent of the crystallographic direction along which spins are magnetized. These results definitively show that (Ga,Mn)As layers can couple across a non-magnetic spacer, and that such coupling depends on spacer thickness.Comment: Submitted to Physical Review

Ferromagnetic semiconductors

The current status and prospects of research on ferromagnetism in semiconductors are reviewed. The question of the origin of ferromagnetism in europium chalcogenides, chromium spinels and, particularly, in diluted magnetic semiconductors is addressed. The nature of electronic states derived from 3d of magnetic impurities is discussed in some details. Results of a quantitative comparison between experimental and theoretical results, notably for Mn-based III-V and II-VI compounds, are presented. This comparison demonstrates that the current theory of the exchange interactions mediated by holes in the valence band describes correctly the values of Curie temperatures T_C magnetic anisotropy, domain structure, and magnetic circular dichroism. On this basis, chemical trends are examined and show to lead to the prediction of semiconductor systems with T_C that may exceed room temperature, an expectation that are being confirmed by recent findings. Results for materials containing magnetic ions other than Mn are also presented emphasizing that the double exchange involving hoping through d states may operate in those systems.Comment: 18 pages, 8 figures; special issue of Semicon. Sci. Technol. on semiconductor spintronic