Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: a case study of InN

We present a comprehensive study of vacancy and vacancy-impurity complexes in InN combining positron annihilation spectroscopy and ab-initio calculations. Positron densities and annihilation characteristics of common vacancy-type defects are calculated using density functional theory and the feasibility of their experimental detection and distinction with positron annihilation methods is discussed. The computational results are compared to positron lifetime and conventional as well as coincidence Doppler broadening measurements of several representative InN samples. The particular dominant vacancy-type positron traps are identified and their characteristic positron lifetimes, Doppler ratio curves and lineshape parameters determined. We find that In vacancies and their complexes with N vacancies or impurities act as efficient positron traps, inducing distinct changes in the annihilation parameters compared to the InN lattice. Neutral or positively charged N vacancies and pure N vacancy complexes on the other hand do not trap positrons. The predominantly introduced positron trap in irradiated InN is identified as the isolated In vacancy, while in as-grown InN layers In vacancies do not occur isolated but complexed with one or more N vacancies. The number of N vacancies per In vacancy in these complexes is found to increase from the near surface region towards the layer-substrate interface.Comment: 10 pages, 6 figure

Shortcuts to adiabaticity for trapped ultracold gases

We study, experimentally and theoretically, the controlled transfer of harmonically trapped ultracold gases between different quantum states. In particular we experimentally demonstrate a fast decompression and displacement of both a non-interacting gas and an interacting Bose-Einstein condensate which are initially at equilibrium. The decompression parameters are engineered such that the final state is identical to that obtained after a perfectly adiabatic transformation despite the fact that the fast decompression is performed in the strongly non-adiabatic regime. During the transfer the atomic sample goes through strongly out-of-equilibrium states while the external confinement is modified until the system reaches the desired stationary state. The scheme is theoretically based on the invariants of motion and scaling equations techniques and can be generalized to decompression trajectories including an arbitrary deformation of the trap. It is also directly applicable to arbitrary initial non-equilibrium states.Comment: 36 pages, 14 figure

Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in InxGa1-xN are in excellent agreement with the predictions of the amphoteric defect model

New coherent detector for terahertz radiation based on excitonic electroabsorption

We demonstrate a new technique for the coherent measurement of free‐space THz electrical transients, based on the parallel‐field excitonic electroabsorption effect in GaAs quantum wells. A THz transient generated from a photoconductive dipole antenna is measured with a rise time of 290 fs and a full width at half maximum of 360 fs. The initial rise of the THz wave form is abrupt, and does not display the exponential leading edge apparent in waveforms measured with photoconductive techniques. The detector sensitivity is sub‐100 mV/cm.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70714/2/APPLAB-61-15-1763-1.pd

Compensating point defects in 4He+ -irradiated InN

We use positron annihilation spectroscopy to study 2 MeV 4He+ -irradiated InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapor deposition. In GaN, the Ga vacancies act as important compensating centers in the irradiated material, introduced at a rate of 3600 cm exp −1. The In vacancies are introduced at a significantly lower rate of 100cm−1, making them negligible in the compensation of the irradiation-induced additional n-type conductivity in InN. On the other hand, negative non-open volume defects are introduced at a rate higher than 2000cm exp −1. These defects are tentatively attributed to interstitial nitrogen and may ultimately limit the free-electron concentration at high irradiation fluences.Peer reviewe

Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

Electron accumulation is found to occur at the surface of wurtzite (112¯0), (0001), and (0001¯) and zinc-blende (001) InN using x-ray photoemission spectroscopy. The accumulation is shown to be a universal feature of InN surfaces. This is due to the low Г-point conduction band minimum lying significantly below the charge neutrality level

Universality and Phase Diagram around Half-filled Landau Level

Gated GaAs/AlGaAs heterostructures were used to determine the low-temperature behavior of the two-dimensional electron gas near filling factor nu=1/2 in the disorder-magnetic-field plane. We identify a line on which sigma_{xy} is temperature independent, has value sigma_{xy}=0.5 (e^{2}/h), and a distinct line on which rho_{xy}=2 (h/e^{2}). The phase boundaries between the Hall insulator and the principal quantum Hall liquids at nu=1 and 1/3 show levitation of the delocalized states of the first Landau levels for electrons and composite fermions. Finally, the data suggest that there is no true metallic phase around nu=1/2.Comment: 7 pages (Revtex), 5 figure

Time-resolved observation of ballistic acceleration of electrons in GaAs quantum wells

The authors have studied high-field parallel transport of photoinjected carriers in GaAs quantum wells using femtosecond optical spectroscopy. They have directly observed the transient nonequilibrium distribution functions that occur during the field-induced acceleration of the electrons. At a high field (16 kV cm-1), a nonthermal high-energy tail in the distribution function is apparent during the first 150 fs, which is due to electrons ballistically accelerated from the band edge. At later times, the authors observe the relaxation of the applied electric field due both to radiation from the accelerating carriers and from the build-up of space charge as the electron and hole gases separate.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/48929/2/ss920b31.pd

An ovary transcriptome for all maturational stages of the striped bass (Morone saxatilis), a highly advanced perciform fish

<p>Abstract</p> <p>Background</p> <p>The striped bass and its relatives (genus <it>Morone</it>) are important fisheries and aquaculture species native to estuaries and rivers of the Atlantic coast and Gulf of Mexico in North America. To open avenues of gene expression research on reproduction and breeding of striped bass, we generated a collection of expressed sequence tags (ESTs) from a complementary DNA (cDNA) library representative of their ovarian transcriptome.</p> <p>Results</p> <p>Sequences of a total of 230,151 ESTs (51,259,448 bp) were acquired by Roche 454 pyrosequencing of cDNA pooled from ovarian tissues obtained at all stages of oocyte growth, at ovulation (eggs), and during preovulatory atresia. Quality filtering of ESTs allowed assembly of 11,208 high-quality contigs ≥ 100 bp, including 2,984 contigs 500 bp or longer (average length 895 bp). Blastx comparisons revealed 5,482 gene orthologues (E-value < 10^-3), of which 4,120 (36.7% of total contigs) were annotated with Gene Ontology terms (E-value < 10^-6). There were 5,726 remaining unknown unique sequences (51.1% of total contigs). All of the high-quality EST sequences are available in the National Center for Biotechnology Information (NCBI) Short Read Archive (GenBank: <ext-link ext-link-id="SRX007394" ext-link-type="gen">SRX007394</ext-link>). Informative contigs were considered to be abundant if they were assembled from groups of ESTs comprising ≥ 0.15% of the total short read sequences (≥ 345 reads/contig). Approximately 52.5% of these abundant contigs were predicted to have predominant ovary expression through digital differential display <it>in silico </it>comparisons to zebrafish (<it>Danio rerio</it>) UniGene orthologues. Over 1,300 Gene Ontology terms from Biological Process classes of Reproduction, Reproductive process, and Developmental process were assigned to this collection of annotated contigs.</p> <p>Conclusions</p> <p>This first large reference sequence database available for the ecologically and economically important temperate basses (genus <it>Morone</it>) provides a foundation for gene expression studies in these species. The predicted predominance of ovary gene expression and assignment of directly relevant Gene Ontology classes suggests a powerful utility of this dataset for analysis of ovarian gene expression related to fundamental questions of oogenesis. Additionally, a high definition Agilent 60-mer oligo ovary 'UniClone' microarray with 8 × 15,000 probe format has been designed based on this striped bass transcriptome (eArray Group: Striper Group, Design ID: 029004).</p