Adjointness Relations as a Criterion for Choosing an Inner Product

This is a contribution to the forthcoming book "Canonical Gravity: {}From Classical to Quantum" edited by J. Ehlers and H. Friedrich. Ashtekar's criterion for choosing an inner product in the quantisation of constrained systems is discussed. An erroneous claim in a previous paper is corrected and a cautionary example is presented.Comment: 6 pages, MPA-AR-94-

Empirical evidence for the Birch and Swinnerton-Dyer conjectures for modular jacobians of genus 2 curves

This paper provides empirical evidence for the Birch and Swinnerton-Dyer conjectures for modular Jacobians of genus 2 curves. The second of these conjectures relates six quantities associated to a Jacobian over the rational numbers. One of these six quantities is the size of the Shafarevich-Tate group. Unable to compute that, we computed the five other quantities and solved for the last one. In all 32 cases, the result is very close to an integer that is a power of 2. In addition, this power of 2 agrees with the size of the 2-torsion of the Shafarevich-Tate group, which we could compute

Report of the Working Group on Possible Follow-up Action for the CGIAR on UNCED Agenda 21

Paper prepared by Stein Bie of NORAGRIC at the request of the CGIAR Chairman, with the assistance of Cassandra Bergstrom, on a possible CGIAR response to the Agenda 21 action plan developed at the United Nations Conference on Environment and Development (UNCED).The paper enumerates the CGIAR's strengths and comparative advantages as a potential executing agency for Agenda 21 objectives, and the parallels between those objectives and the mandate of the CGIAR, particularly in the areas of poverty reduction, agricultural production, and the environment.The authors suggest the CGIAR promote three global programs explicitly related to Agenda 21 objectives: a Global Soils and Water Program, a Global Genetic Resources Program, and a Global Human Resources Capacity Building Program.Agenda document, CGIAR Mid Term Meeting, May 1993

Positron-inert gas differential elastic scattering

Measurements are being made in a crossed beam experiment of the relative elastic differential cross section (DCS) for 5 to 300 eV positrons scattering from inert gas atoms (He, Ne, Ar, Kr, and Xe) in the angular range from 30 to 134 deg. Results obtained at energies around the positronium (Ps) formation threshold provide evidence that Ps formation and possibly other inelastic channels have an effect on the elastic scattering channel

Oxygen and hydrogen ion abundance in the near-Earth magnetosphere: Statistical results on the response to the geomagnetic and solar wind activity conditions

The composition of ions plays a crucial role for the fundamental plasma properties in the terrestrial magnetosphere. We investigate the oxygen-to-hydrogen ratio in the near-Earth magnetosphere from -10 RE<XGSE}< 10 RE. The results are based on seven years of ion flux measurements in the energy range ~10 keV to ~955 keV from the RAPID and CIS instruments on board the Cluster satellites. We find that (1) hydrogen ions at ~10 keV show only a slight correlation with the geomagnetic conditions and interplanetary magnetic field changes. They are best correlated with the solar wind dynamic pressure and density, which is an expected effect of the magnetospheric compression; (2) ~10 keV O+ ion intensities are more strongly affected during disturbed phase of a geomagnetic storm or substorm than >274 keV O+ ion intensities, relative to the corresponding hydrogen intensities; (3) In contrast to ~10 keV ions, the >274 keV O+ ions show the strongest acceleration during growth phase and not during the expansion phase itself. This suggests a connection between the energy input to the magnetosphere and the effective energization of energetic ions during growth phase; (4) The ratio between quiet and disturbed times for the intensities of ion ionospheric outflow is similar to those observed in the near-Earth magnetosphere at >274 keV. Therefore, the increase of the energetic ion intensity during disturbed time is more likely due to the intensification than to the more effective acceleration of the ionospheric source. In conclusion, the energization process in the near-Earth magnetosphere is mass dependent and it is more effective for the heavier ions

Realistic Magnetohydrodynamical Simulation of Solar Local Supergranulation

Three-dimensional numerical simulations of solar surface magnetoconvection using realistic model physics are conducted. The thermal structure of convective motions into the upper radiative layers of the photosphere, the main scales of convective cells and the penetration depths of convection are investigated. We take part of the solar photosphere with size of 60x60 Mm in horizontal direction and by depth 20 Mm from level of the visible solar surface. We use a realistic initial model of the Sun and apply equation of state and opacities of stellar matter. The equations of fully compressible radiation magnetohydrodynamics with dynamical viscosity and gravity are solved. We apply: 1) conservative TVD difference scheme for the magnetohydrodynamics, 2) the diffusion approximation for the radiative transfer, 3) dynamical viscosity from subgrid scale modeling. In simulation we take uniform two-dimesional grid in gorizontal plane and nonuniform grid in vertical direction with number of cells 600x600x204. We use 512 processors with distributed memory multiprocessors on supercomputer MVS-100k in the Joint Computational Centre of the Russian Academy of Sciences.Comment: 6 pages, 5 figures, submitted to the proceedings of the GONG 2008 / SOHO XXI conferenc

Electronic properties of Si/Si1–x–yGexCy heterojunctions

We have used admittance spectroscopy and deep-level transient spectroscopy to characterize electronic properties of Si/Si1–x–yGexCy heterostructures. Band offsets measured by admittance spectroscopy for compressively strained Si/Si1–x–yGexCy heterojunctions indicate that incorporation of C into Si1–x–yGexCy lowers both the valence- and conduction-band edges compared to those in Si1–xGex by an average of 107 ± 6 meV/% C and 75 ± 6 meV/% C, respectively. Combining these measurements indicates that the band alignment is type I for the compositions we have studied, and that these results are consistent with previously reported results on the energy band gap of Si1–x–yGexCy and with measurements of conduction band offsets in Si/Si1–yCy heterojunctions. Several electron traps were observed using deep-level transient spectroscopy on two n-type heterostructures. Despite the presence of a significant amount of nonsubstitutional C (0.29–1.6 at. %), none of the peaks appear attributable to previously reported interstitial C levels. Possible sources for these levels are discussed

Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy

We have used admittance spectroscopy to measure conduction-band and valence-band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Valence-band offsets measured for Si/Si1–xGex heterojunctions were in excellent agreement with previously reported values. Incorporation of C into Si1–x–yGexCy lowers the valence- and conduction-band-edge energies compared to those in Si1–xGex with the same Ge concentration. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicate that the band alignment is Type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions

Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si1–xGex heterostructures and conduction-band and valence-band offsets in Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured Si/Si1–xGex valence-band offsets were in excellent agreement with previously reported values. For Si/Si1–x–yGexCy our measurements yielded a conduction-band offset of 100 ± 11 meV for a n-type Si/Si0.82Ge0.169C0.011 heterojunction and valence-band offsets of 118 ± 12 meV for a p-type Si/Si0.79Ge0.206C0.004 heterojunction and 223 ± 20 meV for a p-type Si/Si0.595Ge0.394C0.011 heterojunction. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicates that the band alignment is type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures

Deep-level transient spectroscopy was used to measure the activation energies of deep levels in n-type Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Four deep levels have been observed at various activation energies ranging from 231 to 405 meV below the conduction band. The largest deep-level concentration observed was in the deepest level and was found to be approximately 2 × 10^15 cm^–3. Although a large amount of nonsubstitutional C was present in the alloy layers (1–2 at. %), no deep levels were observed at any energy levels that, to the best of our knowledge, have been previously attributed to interstitial C