Anderson-Hubbard model with box disorder: Statistical dynamical mean-field theory investigation

Strongly correlated electrons with box disorder in high-dimensional lattices are investigated. We apply the statistical dynamical mean-field theory, which treats local correlations non-perturbatively. The incorporation of a finite lattice connectivity allows for the detection of disorder-induced localization via the probability distribution function of the local density of states. We obtain a complete paramagnetic ground state phase diagram and find correlation-induced as well as disorder-induced metal-insulator transitions. Our results qualitatively confirm predictions obtained by typical medium theory. Moreover, we find that the probability distribution function of the local density of states in the metallic phase strongly deviates from a log-normal distribution as found for the non-interacting case.Comment: 13 pages, 15 figures, published versio

Doping Dependence of Polaron Hopping Energies in La(1-x)Ca(x)MnO(3) (0<= x<= 0.15)

Measurements of the low-frequency (f<= 100 kHz) permittivity at T<= 160 K and dc resistivity (T<= 430 K) are reported for La(1-x)Ca(x)MnO(3) (0<= x<= 0.15). Static dielectric constants are determined from the low-T limiting behavior of the permittivity. The estimated polarizability for bound holes ~ 10^{-22} cm^{-3} implies a radius comparable to the interatomic spacing, consistent with the small polaron picture established from prior transport studies near room temperature and above on nearby compositions. Relaxation peaks in the dielectric loss associated with charge-carrier hopping yield activation energies in good agreement with low-T hopping energies determined from variable-range hopping fits of the dc resistivity. The doping dependence of these energies suggests that the orthorhombic, canted antiferromagnetic ground state tends toward an insulator-metal transition that is not realized due to the formation of the ferromagnetic insulating state near Mn(4+) concentration ~ 0.13.Comment: PRB in press, 5 pages, 6 figure

Orbital selective insulator-metal transition in V2O3 under external pressure

We present a detailed account of the physics of Vanadium sesquioxide (${\rm V_2O_3}$), a benchmark system for studying correlation induced metal-insulator transition(s). Based on a detailed perusal of a wide range of experimental data, we stress the importance of multi-orbital Coulomb interactions in concert with first-principles LDA bandstructure for a consistent understanding of the PI-PM MIT under pressure. Using LDA+DMFT, we show how the MIT is of the orbital selective type, driven by large changes in dynamical spectral weight in response to small changes in trigonal field splitting under pressure. Very good quantitative agreement with ($i$) the switch of orbital occupation and ($ii$) S=1 at each $V^{3+}$ site across the MIT, and ($iii$) carrier effective mass in the PM phase, is obtained. Finally, using the LDA+DMFT solution, we have estimated screening induced renormalisation of the local, multi-orbital Coulomb interactions. Computation of the one-particle spectral function using these screened values is shown to be in excellent quantitative agreement with very recent experimental (PES and XAS) results. These findings provide strong support for an orbital-selective Mott transition in paramagnetic ${\rm V_2O_3}$.Comment: 12 pages, 7 figure

Skew scattering due to intrinsic spin-orbit coupling in a two-dimensional electron gas

We present the generalization of the two-dimensional quantum scattering formalism to systems with Rashba spin-orbit coupling. Using symmetry considerations, we show that the differential scattering cross section depends on the spin state of the incident electron, and skew scattering may arise even for central spin-independent scattering potentials. The skew scattering effect is demonstrated by exact results of a simple hard wall impurity model. The magnitude of the effect for short-range impurities is estimated using the first Born approximation. The exact formalism we present can serve as a foundation for further theoretical investigations.Comment: 4 pages, 3 figur

Analytical calculation of the Green's function and Drude weight for a correlated fermion-boson system

In classical Drude theory the conductivity is determined by the mass of the propagating particles and the mean free path between two scattering events. For a quantum particle this simple picture of diffusive transport loses relevance if strong correlations dominate the particle motion. We study a situation where the propagation of a fermionic particle is possible only through creation and annihilation of local bosonic excitations. This correlated quantum transport process is outside the Drude picture, since one cannot distinguish between free propagation and intermittent scattering. The characterization of transport is possible using the Drude weight obtained from the f-sum rule, although its interpretation in terms of free mass and mean free path breaks down. For the situation studied we calculate the Green's function and Drude weight using a Green's functions expansion technique, and discuss their physical meaning.Comment: final version, minor correction

Stabilization of charge ordering in La_(1/3)Sr_(2/3)FeO_(3-d) by magnetic exchange

The magnetic exchange energies in charge ordered La_(1/3)Sr_(2/3)FeO_(3-d) (LSFO) and its parent compound LaFeO_(3) (LFO) have been determined by inelastic neutron scattering. In LSFO, the measured ratio of ferromagnetic exchange between Fe3+ - Fe5+ pairs (J_F) and antiferromagnetic exchange between Fe3+ - Fe3+ pairs (J_AF) fulfills the criterion for charge ordering driven by magnetic interactions (|J_F/J_AF| > 1). The 30% reduction of J_AF as compared to LFO indicates that doped holes are delocalized, and charge ordering occurs without a dominant influence from Coulomb interactions.Comment: 18 pages, 4 color figure

Effect of Strain Relaxation on Magnetotransport properties of epitaxial La_0.7Ca_0.3MnO_3 films

In this paper, we have studied the effect of strain relaxation on magneto-transport properties of La_0.7Ca_0.3MnO_3 epitaxial films (200 nm thick), which were deposited by pulsed laser deposition technique under identical conditions. All the films are epitaxial and have cubic unit cell. The amount of strain relaxation has been varied by taking three different single crystal substrates of SrTiO_3, LaAlO_3 and MgO. It has been found that for thicker films the strain gets relaxed and produces variable amount of disorder depending on the strength of strain relaxation. The magnitude of lattice relaxation has been found to be 0.384, 3.057 and 6.411 percent for film deposited on SrTiO_3, LaAlO_3 and MgO respectively. The films on LaAlO_3 and SrTiO_3 show higher T_{IM} of 243 K and 217 K respectively as compared to T_{IM} of 191 K for the film on MgO. Similarly T_C of the films on SrTiO_3 and LaAlO_3 is sharper and has value of 245 K and 220 K respectively whereas the TC of the film on MgO is 175 K. Higher degree of relaxation creates more defects and hence TIM (T_C) of the film on MgO is significantly lower than of SrTiO_3 and LaAlO_3. We have adopted a different approach to correlate the effect of strain relaxation on magneto-transport properties of LCMO films by evaluating the resistivity variation through Mott's VRH model. The variable presence of disorder in these thick films due to lattice relaxation which have been analyzed through Mott's VRH model provides a strong additional evidence that the strength of lattice relaxation produces disorder dominantly by increase in density of defects such as stacking faults, dislocations, etc. which affect the magneto-transport properties of thick epitaxial La_0.7Ca_0.3MnO_3 films

Search for Ferromagnetism in doped semiconductors in the absence of transition metal ions

In contrast to semiconductors doped with transition metal magnetic elements, which become ferromagnetic at temperatures below ~ 100K, semiconductors doped with non-magnetic ions (e.g. silicon doped with phosphorous) have not shown evidence of ferromagnetism down to millikelvin temperatures. This is despite the fact that for low densities the system is expected to be well modeled by the Hubbard model, which is predicted to have a ferromagnetic ground state at T=0 on 2- or 3-dimensional bipartite lattices in the limit of strong correlation near half-filling. We examine the impurity band formed by hydrogenic centers in semiconductors at low densities, and show that it is described by a generalized Hubbard model which has, in addition to strong electron-electron interaction and disorder, an intrinsic electron-hole asymmetry. With the help of mean field methods as well as exact diagonalization of clusters around half filling, we can establish the existence of a ferromagnetic ground state, at least on the nanoscale, which is more robust than that found in the standard Hubbard model. This ferromagnetism is most clearly seen in a regime inaccessible to bulk systems, but attainable in quantum dots and 2D heterostructures. We present extensive numerical results for small systems that demonstrate the occurrence of high-spin ground states in both periodic and positionally disordered 2D systems. We consider how properties of real doped semiconductors, such as positional disorder and electron-hole asymmetry, affect the ground state spin of small 2D systems. We also discuss the relationship between this work and diluted magnetic semiconductors, such as Ga_(1-x)Mn_(x)As, which though disordered, show ferromagnetism at relatively high temperatures.Comment: 47 page

Large temperature dependence of the Casimir force at the metal-insulator transition

The dependence of the Casimir force on material properties is important for both future applications and to gain further insight on its fundamental aspects. Here we derive a general theory of the Casimir force for low-conducting compounds, or poor metals. For distances in the micrometer range, a large variety of such materials is described by universal equations containing a few parameters: the effective plasma frequency, dissipation rate of the free carriers, and electric permittivity in the infrared range. This theory can also describe inhomogeneous composite materials containing small regions with different conductivity. The Casimir force for mechanical systems involving samples made with compounds that have a metal-insulator transition shows an abrupt large temperature dependence of the Casimir force within the transition region, where metallic and dielectric phases coexist.Comment: 23 pages, 9 figure