402 research outputs found
Silicon Photonics for Coherent Terahertz Generation and Detection
Silicon-plasmonic internal photoemission devices can act as photomixers for generating terahertz frequency carriers (T-waves) for transmitters (Tx), or they function as receivers (Rx) for coherently downconverting Twave signals to the baseband. In a first demonstration, we monolithically integrate a Tx and a Rx on a silicon chip and operate them in a carrier frequency range up to 1THz . With a co-integrated transmission line both components can be connected
40 Gbit/s silicon-organic hybrid (SOH) phase modulator
A 40 Gbit/s electro-optic modulator is demonstrated. The modulator is based on a slotted silicon waveguide filled with an organic material. The silicon organic hybrid (SOH) approach allows combining highly nonlinear electro-optic organic materials with CMOS-compatible silicon photonics technology
Определение облика космического аппарата, предназначенного для посадки на космическое тело с малым гравитационным полем
Field-effect silicon-plasmonic photodetector for coherent T-wave reception
Plasmonic internal photoemission detectors (PIPED) have recently been shown to combine compact footprint and high bandwidth with monolithic co-integration into silicon photonic circuits, thereby opening an attractive route towards optoelectronic generation and detection of waveforms in the sub-THz and THz frequency range, so-called T-waves. In this paper, we further expand the PIPED concept by introducing a metal-oxide-semiconductor (MOS) interface with an additional gate electrode that allows to control the carrier dynamics in the device and the degree of internal photoemission at the metal-semiconductor interfaces. We experimentally study the behavior of dedicated field-effect (FE-)PIPED test structures and develop a physical understanding of the underlying principles. We find that the THz down-conversion efficiency of FE-PIPED can be significantly increased when applying a gate potential. Building upon the improved understanding of the device physics, we further perform simulations and show that the gate field increases the carrier density in the conductive channel below the gate oxide to the extent that the device dynamics are determined by ultra-fast dielectric relaxation rather than by the carrier transit time. In this regime, the bandwidth can be increased to more than 1 THz. We believe that our experiments open a new path towards understanding the principles of internal photoemission in plasmonic structures, leading to PIPED-based optoelectronic signal processing systems with unprecedented bandwidth and efficiency
Silicon-organic hybrid electro-optical devices
Organic materials combined with strongly guiding silicon waveguides open the route to highly efficient electro-optical devices. Modulators based on the so-called silicon-organic hybrid (SOH) platform have only recently shown frequency responses up to 100 GHz, high-speed operation beyond 112 Gbit/s with fJ/bit power consumption. In this paper, we review the SOH platform and discuss important devices such as Mach-Zehnder and IQ-modulators based on the linear electro-optic effect. We further show liquid-crystal phase-shifters with a voltage-length product as low as V pi L = 0.06 V.mm and sub-mu W power consumption as required for slow optical switching or tuning optical filters and devices
Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) integration
Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon photonic platform, reducing device footprint by more than an order of magnitude. However, nei-ther silicon nor metals exhibit appreciable second-order optical nonlinearities, thereby making efficient electro-optic modulators challenging to realize. These deficiencies can be overcome by the concepts of silicon-organic hybrid (SOH) and plasmonic-organic hybrid integration, which combine SOI waveguides and plasmonic nanostructures with organic electro-optic cladding materials
Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) integration
Silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) integration combines organic clectro-optic materials with silicon photonic and plasmonic waveguides, The concept enables fast and power-efficient modulators that support advanced modulation formats such as QPSK and 16QAM
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