6,246 research outputs found
Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells
Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells is studied
via the fully microscopic kinetic spin Bloch equation approach where all the
scatterings, such as the electron-impurity, electron-phonon, electron-electron
Coulomb, electron-hole Coulomb, electron-hole exchange (the Bir-Aronov-Pikus
mechanism) and the - exchange scatterings, are explicitly included. The
Elliot-Yafet mechanism is also incorporated. From this approach, we study the
spin relaxation in both -type and -type Ga(Mn)As quantum wells. For
-type Ga(Mn)As quantum wells where most Mn ions take the interstitial
positions, we find that the spin relaxation is always dominated by the DP
mechanism in metallic region. Interestingly, the Mn concentration dependence of
the spin relaxation time is nonmonotonic and exhibits a peak. This behavior is
because that the momentum scattering and the inhomogeneous broadening have
different density dependences in the non-degenerate and degenerate regimes. For
-type Ga(Mn)As quantum wells, we find that Mn concentration dependence of
the spin relaxation time is also nonmonotonic and shows a peak. Differently,
this behavior is because that the - exchange scattering (or the
Bir-Aronov-Pikus) mechanism dominates the spin relaxation in the high Mn
concentration regime at low (or high) temperature, whereas the DP mechanism
determines the spin relaxation in the low Mn concentration regime. The
Elliot-Yafet mechanism also contributes the spin relaxation at intermediate
temperature. The spin relaxation time due to the DP mechanism increases with Mn
concentration due to motional narrowing, whereas those due to the spin-flip
mechanisms decrease with Mn concentration, which thus leads to the formation of
the peak.... (The remaining is omitted due to the space limit)Comment: 12 pages, 8 figures, Phys. Rev. B 79, 2009, in pres
Mean first passage times for bond formation for a Brownian particle in linear shear flow above a wall
Motivated by cell adhesion in hydrodynamic flow, here we study bond formation
between a spherical Brownian particle in linear shear flow carrying receptors
for ligands covering the boundary wall. We derive the appropriate Langevin
equation which includes multiplicative noise due to position-dependent mobility
functions resulting from the Stokes equation. We present a numerical scheme
which allows to simulate it with high accuracy for all model parameters,
including shear rate and three parameters describing receptor geometry
(distance, size and height of the receptor patches). In the case of homogeneous
coating, the mean first passage time problem can be solved exactly. In the case
of position-resolved receptor-ligand binding, we identify different scaling
regimes and discuss their biological relevance.Comment: final version after minor revision
Effect of initial spin polarization on spin dephasing and electron g factor in a high-mobility two-dimensional electron system
We have investigated the spin dynamics of a high-mobility two-dimensional
electron system (2DES) in a GaAs--AlGaAs single quantum well by
time-resolved Faraday rotation (TRFR) in dependence on the initial degree of
spin polarization, , of the 2DES. From to %, we observe
an increase of the spin dephasing time, , by an order of magnitude,
from about 20 ps to 200 ps, in good agreement with theoretical predictions by
Weng and Wu [Phys. Rev. B {\bf 68}, 075312 (2003)]. Furthermore, by applying an
external magnetic field in the Voigt configuration, also the electron
factor is found to decrease for increasing . Fully microscopic calculations,
by numerically solving the kinetic spin Bloch equations considering the
D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms, reproduce the most
salient features of the experiments, {\em i.e}., a dramatic decrease of spin
dephasing and a moderate decrease of the electron factor with increasing
. We show that both results are determined dominantly by the Hartree-Fock
contribution of the Coulomb interaction.Comment: 4 pages, 4 figures, to be published in PR
Spin dephasing and photoinduced spin diffusion in high-mobility 110-grown GaAs-AlGaAs two-dimensional electron systems
We have studied spin dephasing and spin diffusion in a high-mobility
two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown
in the [110] direction, by a two-beam Hanle experiment. For very low excitation
density, we observe spin lifetimes of more than 16 ns, which rapidly decrease
as the pump intensity is increased. Two mechanisms contribute to this decrease:
the optical excitation produces holes, which lead to a decay of electron spin
via the Bir-Aranov-Pikus mechanism and recombination with spin-polarized
electrons. By scanning the distance between the pump and probe beams, we
observe the diffusion of spin-polarized electrons over more than 20 microns.
For high pump intensity, the spin polarization in a distance of several microns
from the pump beam is larger than at the pump spot, due to the reduced
influence of photogenerated holes.Comment: 4 pages, 3 figure
Spin dynamics in p-doped semiconductor nanostructures subject to a magnetic field tilted from the Voigt geometry
We develop a theoretical description of the spin dynamics of resident holes
in a p-doped semiconductor quantum well (QW) subject to a magnetic field tilted
from the Voigt geometry. We find the expressions for the signals measured in
time-resolved Faraday rotation (TRFR) and resonant spin amplification (RSA)
experiments and study their behavior for a range of system parameters. We find
that an inversion of the RSA peaks can occur for long hole spin dephasing times
and tilted magnetic fields. We verify the validity of our theoretical findings
by performing a series of TRFR and RSA experiments on a p-modulation doped
GaAs/Al_{0.3}Ga_{0.7}As single QW and showing that our model can reproduce
experimentally observed signals.Comment: 9 pages, 3 figures; corrected typo
Phase field theory of polycrystalline solidification in three dimensions
A phase field theory of polycrystalline solidification is presented that is
able to describe the nucleation and growth of anisotropic particles with
different crystallographic orientation in three dimensions. As opposed with the
two-dimensional case, where a single orientation field suffices, in three
dimensions, minimum three fields are needed. The free energy of grain
boundaries is assumed to be proportional to the angular difference between the
adjacent crystals expressed here in terms of the differences of the four
symmetric Euler parameters. The equations of motion for these fields are
obtained from variational principles. Illustrative calculations are performed
for polycrystalline solidification with dendritic, needle and spherulitic
growth morphologies.Comment: 7 pages, 4 figures, submitted to Europhysics Letters on 14th
February, 200
Dependence of spin dephasing on initial spin polarization in a high-mobility two-dimensional electron system
We have studied the spin dynamics of a high-mobility two-dimensional electron
system in a GaAs/Al_{0.3}Ga_{0.7}As single quantum well by time-resolved
Faraday rotation and time-resolved Kerr rotation in dependence on the initial
degree of spin polarization, P, of the electrons. By increasing the initial
spin polarization from the low-P regime to a significant P of several percent,
we find that the spin dephasing time, , increases from about 20 ps to
200 ps; Moreover, increases with temperature at small spin
polarization but decreases with temperature at large spin polarization. All
these features are in good agreement with theoretical predictions by Weng and
Wu [Phys. Rev. B {\bf 68}, 075312 (2003)]. Measurements as a function of spin
polarization at fixed electron density are performed to further confirm the
theory. A fully microscopic calculation is performed by setting up and
numerically solving the kinetic spin Bloch equations, including the
D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms, with {\em all} the
scattering explicitly included. We reproduce all principal features of the
experiments, i.e., a dramatic decrease of spin dephasing with increasing
and the temperature dependences at different spin polarizations.Comment: 8 pages, 8 figures, to be published in PR
Engineering ultralong spin coherence in two-dimensional hole systems at low temperatures
For the realisation of scalable solid-state quantum-bit systems, spins in
semiconductor quantum dots are promising candidates. A key requirement for
quantum logic operations is a sufficiently long coherence time of the spin
system. Recently, hole spins in III-V-based quantum dots were discussed as
alternatives to electron spins, since the hole spin, in contrast to the
electron spin, is not affected by contact hyperfine interaction with the
nuclear spins. Here, we report a breakthrough in the spin coherence times of
hole ensembles, confined in so called natural quantum dots, in narrow
GaAs/AlGaAs quantum wells at temperatures below 500 mK. Consistently,
time-resolved Faraday rotation and resonant spin amplification techniques
deliver hole-spin coherence times, which approach in the low magnetic field
limit values above 70 ns. The optical initialisation of the hole spin
polarisation, as well as the interconnected electron and hole spin dynamics in
our samples are well reproduced using a rate equation model.Comment: 16 pages, 6 figure
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