62 research outputs found
Ferroelectric Nanotubes
We report the independent invention of ferroelectric nanotubes from groups in
several countries. Devices have been made with three different materials: lead
zirconate-titanate PbZr1-xTixO3 (PZT); barium titanate BaTiO3; and strontium
bismuth tantalate SrBi2Ta2O9 (SBT). Several different deposition techniques
have been used successfully, including misted CSD (chemical solution
deposition) and pore wetting. Ferroelectric hysteresis and high optical
nonlinearity have been demonstrated. The structures are analyzed via SEM, TEM,
XRD, AFM (piezo-mode), and SHG. Applications to trenching in Si dynamic random
access memories, ink-jet printers, and photonic devices are discussed.
Ferroelectric filled pores as small as 20 nm in diameter have been studied
ΠΠ΅Ρ Π°Π½ΠΈΠ·ΠΌΡ ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π³Π΅ΡΠ΅ΡΠΎΡΠ°Π·Π½ΡΡ ΡΠ΅Π³Π½Π΅ΡΠΎΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ ΠΏΠ»Π΅Π½ΠΎΠΊ ΡΠΈΡΠΊΠΎΠ½Π°ΡΠ°-ΡΠΈΡΠ°Π½Π°ΡΠ° ΡΠ²ΠΈΠ½ΡΠ°
An experimental and theoretical study of the formation processes of "impurity" phase inclusions in ferroelectric oxides is carried out via example of polycrystalline lead zirconate-titanate (PZT) films. A feature of these compositions is relatively high volatility of lead oxides, which can lead to deficiency of these components in the composition of the ferroelectric film formed during high-temperature crystallization. To avoid lead losses, some excess is added to the solution in the process of synthesis. Experimental samples of PZT films are obtained using sol-gel method with different contents of lead oxide, the crystallization of the ferroelectric phase of the films is carried out in air at 600 Β°C. In the films, the inclusions of lead oxide impurity phase are found, and the size distribution of these inclusions are obtained. Model concepts are presented and a system of equations is proposed describing the dispersed inclusions formation kinetics of new phases of different stoichiometric composition at the interfaces in polycrystalline films of multicomponent ferroelectric oxides due to bulk diffusion and grain-boundary segregation. Comparison of the experimental data with the theoretical model gives qualitative agreement. The approach generality makes it possible to extend the model to other systems of multicomponent ferroelectric polycrystalline materials.ΠΡΠΎΠ²Π΅Π΄Π΅Π½ΠΎ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΠΎΠ΅ ΠΈ ΡΠ΅ΠΎΡΠ΅ΡΠΈΡΠ΅ΡΠΊΠΎΠ΅ ΠΈΠ·ΡΡΠ΅Π½ΠΈΠ΅ ΠΏΡΠΎΡΠ΅ΡΡΠΎΠ² ΠΎΠ±ΡΠ°Π·ΠΎΠ²Π°Π½ΠΈΡ Π²ΠΊΠ»ΡΡΠ΅Π½ΠΈΠΉ "ΠΏΡΠΈΠΌΠ΅ΡΠ½ΡΡ
" ΡΠ°Π· Π² ΡΠ΅Π³Π½Π΅ΡΠΎΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΎΠΊΡΠΈΠ΄Π°Ρ
Π½Π° ΠΏΡΠΈΠΌΠ΅ΡΠ΅ ΠΏΠΎΠ»ΠΈΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ ΡΠΈΡΠΊΠΎΠ½Π°ΡΠ°-ΡΠΈΡΠ°Π½Π°ΡΠ° ΡΠ²ΠΈΠ½ΡΠ° (Π¦Π’Π‘). ΠΡΠΎΠ±Π΅Π½Π½ΠΎΡΡΡΡ Π΄Π°Π½Π½ΡΡ
ΡΠΎΡΡΠ°Π²ΠΎΠ² ΡΠ²Π»ΡΠ΅ΡΡΡ ΡΡΠ°Π²Π½ΠΈΡΠ΅Π»ΡΠ½ΠΎ Π²ΡΡΠΎΠΊΠ°Ρ Π»Π΅ΡΡΡΠ΅ΡΡΡ ΠΎΠΊΡΠΈΠ΄ΠΎΠ² ΡΠ²ΠΈΠ½ΡΠ°, ΡΡΠΎ ΠΌΠΎΠΆΠ΅Ρ ΠΏΡΠΈΠ²ΠΎΠ΄ΠΈΡΡ ΠΊ Π΄Π΅ΡΠΈΡΠΈΡΡ ΡΡΠΈΡ
ΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½ΡΠΎΠ² Π² ΡΠΎΡΡΠ°Π²Π΅ ΡΠΎΡΠΌΠΈΡΡΠ΅ΠΌΠΎΠΉ ΡΠ΅Π³Π½Π΅ΡΠΎΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΏΠ»Π΅Π½ΠΊΠΈ Π² Ρ
ΠΎΠ΄Π΅ Π²ΡΡΠΎΠΊΠΎΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ½ΠΎΠΉ ΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΠ·Π°ΡΠΈΠΈ. Π§ΡΠΎΠ±Ρ ΠΈΠ·Π±Π΅ΠΆΠ°ΡΡ ΠΏΠΎΡΠ΅ΡΠΈ ΡΠ²ΠΈΠ½ΡΠ°, Π² ΠΏΡΠΎΡΠ΅ΡΡΠ΅ ΡΠΈΠ½ΡΠ΅Π·Π° Π² ΡΠ°ΡΡΠ²ΠΎΡ Π΄ΠΎΠ±Π°Π²Π»ΡΡΡ Π΅Π³ΠΎ Π½Π΅ΠΊΠΎΡΠΎΡΡΠΉ ΠΈΠ·Π±ΡΡΠΎΠΊ. ΠΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΡΠ΅ ΠΎΠ±ΡΠ°Π·ΡΡ ΠΏΠ»Π΅Π½ΠΎΠΊ Π¦Π’Π‘ Π±ΡΠ»ΠΈ ΠΏΠΎΠ»ΡΡΠ΅Π½Ρ Π·ΠΎΠ»Ρ-Π³Π΅Π»Ρ-ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ Ρ ΡΠ°Π·Π»ΠΈΡΠ½ΡΠΌ ΡΠΎΠ΄Π΅ΡΠΆΠ°Π½ΠΈΠ΅ΠΌ ΠΎΠΊΡΠΈΠ΄Π° ΡΠ²ΠΈΠ½ΡΠ°, ΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΠ·Π°ΡΠΈΡ ΡΠ΅Π³Π½Π΅ΡΠΎΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠΉ ΡΠ°Π·Ρ ΠΏΠ»Π΅Π½ΠΎΠΊ ΠΎΡΡΡΠ΅ΡΡΠ²Π»ΡΠ»Π°ΡΡ Π½Π° Π²ΠΎΠ·Π΄ΡΡ
Π΅ ΠΏΡΠΈ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ΅ 600 Β°C. Π ΠΏΠ»Π΅Π½ΠΊΠ°Ρ
ΠΎΠ±Π½Π°ΡΡΠΆΠ΅Π½Ρ Π²ΠΊΠ»ΡΡΠ΅Π½ΠΈΡ ΠΏΡΠΈΠΌΠ΅ΡΠ½ΠΎΠΉ ΡΠ°Π·Ρ ΠΎΠΊΡΠΈΠ΄Π° ΡΠ²ΠΈΠ½ΡΠ°, ΠΏΠΎΠ»ΡΡΠ΅Π½ΠΎ ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΠ΅ Π²ΠΊΠ»ΡΡΠ΅Π½ΠΈΠΉ ΠΏΠΎ ΡΠ°Π·ΠΌΠ΅ΡΠ°ΠΌ. ΠΠ·Π»ΠΎΠΆΠ΅Π½Ρ ΠΌΠΎΠ΄Π΅Π»ΡΠ½ΡΠ΅ ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½ΠΈΡ ΠΈ ΠΏΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Π° ΡΠΈΡΡΠ΅ΠΌΠ° ΡΡΠ°Π²Π½Π΅Π½ΠΈΠΉ, ΠΎΠΏΠΈΡΡΠ²Π°ΡΡΠΈΠ΅ ΠΊΠΈΠ½Π΅ΡΠΈΠΊΡ ΠΎΠ±ΡΠ°Π·ΠΎΠ²Π°Π½ΠΈΡ Π΄ΠΈΡΠΏΠ΅ΡΡΠ½ΡΡ
Π²ΠΊΠ»ΡΡΠ΅Π½ΠΈΠΉ Π½ΠΎΠ²ΡΡ
ΡΠ°Π· ΡΠ°Π·Π»ΠΈΡΠ½ΠΎΠ³ΠΎ ΡΡΠ΅Ρ
ΠΈΠΎΠΌΠ΅ΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠΎΡΡΠ°Π²Π° Π½Π° Π³ΡΠ°Π½ΠΈΡΠ°Ρ
ΡΠ°Π·Π΄Π΅Π»Π° Π² ΠΏΠΎΠ»ΠΈΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΏΠ»Π΅Π½ΠΊΠ°Ρ
ΠΌΠ½ΠΎΠ³ΠΎΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½ΡΠ½ΡΡ
ΡΠ΅Π³Π½Π΅ΡΠΎΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΎΠΊΡΠΈΠ΄ΠΎΠ² Π·Π° ΡΡΠ΅Ρ ΠΏΡΠΎΡΠ΅ΡΡΠΎΠ² ΠΎΠ±ΡΠ΅ΠΌΠ½ΠΎΠΉ Π΄ΠΈΡΡΡΠ·ΠΈΠΈ ΠΈ Π·Π΅ΡΠ½ΠΎΠ³ΡΠ°Π½ΠΈΡΠ½ΠΎΠΉ ΡΠ΅Π³ΡΠ΅Π³Π°ΡΠΈΠΈ. Π‘ΠΎΠΏΠΎΡΡΠ°Π²Π»Π΅Π½ΠΈΠ΅ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΡΡ
Π΄Π°Π½Π½ΡΡ
Ρ ΡΠ΅ΠΎΡΠ΅ΡΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΌΠΎΠ΄Π΅Π»ΡΡ Π΄Π°Π»ΠΎ ΡΠΎΠ³Π»Π°ΡΠΈΠ΅ Π½Π° ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅Π½Π½ΠΎΠΌ ΡΡΠΎΠ²Π½Π΅. ΠΠ±ΡΠ½ΠΎΡΡΡ ΠΏΠΎΠ΄Ρ
ΠΎΠ΄Π° ΠΏΠΎΠ·Π²ΠΎΠ»ΡΠ΅Ρ ΡΠ°ΡΠΏΡΠΎΡΡΡΠ°Π½ΠΈΡΡ ΠΌΠΎΠ΄Π΅Π»Ρ Π½Π° Π΄ΡΡΠ³ΠΈΠ΅ ΡΠΈΡΡΠ΅ΠΌΡ ΠΌΠ½ΠΎΠ³ΠΎΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½ΡΠ½ΡΡ
ΡΠ΅Π³Π½Π΅ΡΠΎΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΏΠΎΠ»ΠΈΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»ΠΎΠ²
Dead layer thickness estimation at the ferroelectric film-metal interface in PZT
Yu. Podgorny acknowledges the program of Ministry of Education and Science (3.5726.2017/8.9) and K. Vorotilov and A. Sigov thank the program of Ministry of Education and Science (11.2259.2017).Different models for estimation of the dead layer thickness at the ferroelectric film-metal interface are discussed, including the small-signal capacitance model and two methods based on dielectric hysteresis analysisβone based on slopes of the hysteresis loops at the coercive field and the other method based on comparison of dielectric hysteresis portraits. It is shown that the latter technique yields more reliable data as it excludes the effect of leakage and relaxation loss. Conductivity may have a pronounced effect on the validity of dead-layer thickness data. This work relates peripherally to negative capacitance in ferroelectric films and to lozenge-shaped hysteresis curves.Publisher PDFPeer reviewe
Nonlinear-optical and micro-raman diagnostics of thin films and nanostructures of ABO(3) ferroelectrics
Contains fulltext :
35580.pdf (publisher's version ) (Open Access
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