We report the independent invention of ferroelectric nanotubes from groups in
several countries. Devices have been made with three different materials: lead
zirconate-titanate PbZr1-xTixO3 (PZT); barium titanate BaTiO3; and strontium
bismuth tantalate SrBi2Ta2O9 (SBT). Several different deposition techniques
have been used successfully, including misted CSD (chemical solution
deposition) and pore wetting. Ferroelectric hysteresis and high optical
nonlinearity have been demonstrated. The structures are analyzed via SEM, TEM,
XRD, AFM (piezo-mode), and SHG. Applications to trenching in Si dynamic random
access memories, ink-jet printers, and photonic devices are discussed.
Ferroelectric filled pores as small as 20 nm in diameter have been studied