Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs MQW

The circular photogalvanic effect (CPGE) has been observed in (100)-oriented $p$-GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. It is shown that monopolar optical spin orientation of free carriers causes an electric current which reverses its direction upon changing from left to right circularly polarized radiation. CPGE at normal incidence and the occurence of the linear photogalvanic effect indicate a reduced point symmetry of studied multi-layered heterostructures. As proposed, CPGE can be utilized to investigate separately spin polarization of electrons and holes and the symmetry of quantum wells.Comment: 4 pages, 3 figure

Laterally pumped GaAs/AlGaAs quantum wells as sources of broadband terahertz radiation

In this work we consider lateral current pumped GaAs/AlGaAs quantum wells as sources of incoherent terahertz radiation. The lateral field heats the electrons in a two-dimensional quantum layer and increases the population of higher subbands, hence also increasing the radiation power generated in spontaneous intersubband emission processes. Digitally graded quasi-parabolic and simple square quantum wells are considered, and the advantages of both types are discussed. Calculations at lattice temperatures of 77 K and 300 K, for electric fields up to 10 kV/cm, show that the optical output power of ~100−200 W/m2 may be achieved for the 7 THz source. The main peak of the spectrum, at 7 THz, of the quasi-parabolic quantum well exceeds the black body radiation at 300 K by approximately a factor of two and by two orders of magnitude at 77 K

Optical Spin Orientation under Inter- and Intra-Subband Transitions in QWs

It is shown that absorption of circularly polarized infrared radiation achieved by inter-subband and intra-subband (Drude-like) transitions results in a monopolar spin orientation of free carriers. The monopolar spin polarization in zinc-blende-based quantum wells (QWs) is demonstrated by the observation of the spin-galvanic and circular photogalvanic effects. It is shown that monopolar spin orientation in n-type QWs becomes possible if an admixture of valence band states to the conduction band wave function and the spin-orbit splitting of the valence band are taken into account

Monopolar Optical Orientation of Electronic Spins in Semiconductors

It is shown that absorption of circularly polarized infrared radiation due to intraband (Drude-like) transitions in n-type bulk semiconductors and due to intra-subband or inter-subband transitions in quantum well (QW) structures results in a monopolar spin orientation of free electrons. Spin polarization in zinc-blende-structure based QWs is demonstrated by the observation of the spin-galvanic and the circular photogalvanic effects. The monopolar spin orientation in n-type materials is shown to be possible if an admixture of valence band states to the conduction band wave function and the spin-orbit splitting of the valence band are taken into account

Spin sensitive bleaching and monopolar spin orientation in quantum wells

Spin sensitive bleaching of the absorption of far-infrared radiation has been observed in $p$-type GaAs/AlGaAs quantum well structures. The absorption of circularly polarized radiation saturates at lower intensities than that of linearly polarized light due to monopolar spin orientation in the first heavy hole subband. Spin relaxation times of holes in $p$-type material in the range of tens of ps were derived from the intensity dependence of the absorption.Comment: Figures have been updated due to technical printing problems (Postscript mismatch

Mass measurements of very neutron-deficient Mo and Tc isotopes and their impact on rp process nucleosynthesis

The masses of ten proton-rich nuclides, including the N=Z+1 nuclides 85-Mo and 87-Tc, were measured with the Penning trap mass spectrometer SHIPTRAP. Compared to the Atomic Mass Evaluation 2003 a systematic shift of the mass surface by up to 1.6 MeV is observed causing significant abundance changes of the ashes of astrophysical X-ray bursts. Surprisingly low alpha-separation energies for neutron-deficient Mo and Tc are found, making the formation of a ZrNb cycle in the rp process possible. Such a cycle would impose an upper temperature limit for the synthesis of elements beyond Nb in the rp process.Comment: Link to online abstract: http://link.aps.org/doi/10.1103/PhysRevLett.106.12250

Present and Future Experiments with Stored Exotic Nuclei at Relativistic Energies

Recent progress is presented from experiments on masses and lifetimes of bare and few-electron exotic nuclei at GSI.Comment: Proceedings of International Conference on "Frontiers in Nuclear Structure, Astrophysics and Reactions", Kos, Greece, September 12-17, 200

Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels (at noncompensated donor density from 4.5×10[sup 16] to 3.4×10[sup 18] cm[sup −3]). Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.Peer reviewe

Continuous dielectric permittivity II: An Iterative Method for Calculating the Polar Component of the Molecular Solvation Gibbs Energy Under a Smooth Change in the Dielectric Permittivity of a Solution

An iterative method for calculating the polar component of the solvation Gibbs energy under a smooth change in dielectric permittivity, both between a substrate and a solvent and in a solvent is formulated on the basis of a previously developed model. The method is developed in the approximation of the local relationship D = \eps (r) E between the displacement vectors D and the electric field intensity E.Comment: 36 pages,3 Figures, in English and in Russia