Curve classes on irreducible holomorphic symplectic varieties

We prove that the integral Hodge conjecture holds for 1-cycles on irreducible holomorphic symplectic varieties of K3 type and of Generalized Kummer type. As an application, we give a new proof of the integral Hodge conjecture for cubic fourfolds.Comment: 15 page

On the first Gaussian map for Prym-canonical line bundles

We prove by degeneration to Prym-canonical binary curves that the first Gaussian map of the Prym canonical line bundle $\omega_C \otimes A$ is surjective for the general point [C,A] of R_g if g >11, while it is injective if g < 12.Comment: To appear in Geometriae Dedicata. arXiv admin note: text overlap with arXiv:1105.447

Excitons and high-order optical transitions in individual carbon nanotubes

We examine the excitonic nature of high-lying optical transitions in single-walled carbon nanotubes by means of Rayleigh scattering spectroscopy. A careful analysis of the principal transitions of individual semiconducting and metallic nanotubes reveals that in both cases the lineshape is consistent with an excitonic model, but not one of free-carriers. For semiconducting species, side-bands are observed at ~200 meV above the third and fourth optical transitions. These features are ascribed to exciton-phonon bound states. Such side-bands are not apparent for metallic nanotubes,as expected from the reduced strength of excitonic interactions in these systems

Nondissipative Addressing for Time-Division SQUID Multiplexing

International audienceRecent and future astronomical instruments are based on a focal plane mapped by a large array of superconducting bolometers. Cryogenic analog multiplexing readout techniques, based on superconducting quantum interference devices (SQUIDs), are currently developed to achieve the readout of large arrays of this kind of low noise background-limited detectors. To effectively reduce the number of cryogenic wires (particularly, SQUID biasing), line/column addressing is currently used in time-division multiplexing, i.e., same biasing is applied to a few SQUIDs (on a line) of different columns. This technique should dramatically increase power consumption if parallel biasing is applied via resistors to isolate each column; the power budget is particularly limited on this kind of front-end cryogenic readout. A design with one transformer per SQUID is also used to read out SQUID biased in series with no excess of consumption and crosstalk. We propose here a new biasing technique using simple surface-mounted capacitors, which is easier to implement. These capacitors are used to parallel bias SQUIDs without additional Joule effect while minimizing crosstalk. However, capacitors do not allow dc biasing and need a current mean value equal to zero to avoid biasing source saturation. We have then tested square current biasing through capacitors on a commercial SQUID. This measurement shows that capacitors are able to proper bias SQUID and then to perform a nondissipative addressing for time-division SQUID multiplexing

Effective algebraic degeneracy

We prove that any nonconstant entire holomorphic curve from the complex line C into a projective algebraic hypersurface X = X^n in P^{n+1}(C) of arbitrary dimension n (at least 2) must be algebraically degenerate provided X is generic if its degree d = deg(X) satisfies the effective lower bound: d larger than or equal to n^{{(n+1)}^{n+5}}

Hot electron cooling by acoustic phonons in graphene

We have investigated the energy loss of hot electrons in metallic graphene by means of GHz noise thermometry at liquid helium temperature. We observe the electronic temperature T / V at low bias in agreement with the heat diffusion to the leads described by the Wiedemann-Franz law. We report on $T\propto\sqrt{V}$ behavior at high bias, which corresponds to a T4 dependence of the cooling power. This is the signature of a 2D acoustic phonon cooling mechanism. From a heat equation analysis of the two regimes we extract accurate values of the electron-acoustic phonon coupling constant $\Sigma$ in monolayer graphene. Our measurements point to an important effect of lattice disorder in the reduction of $\Sigma$, not yet considered by theory. Moreover, our study provides a strong and firm support to the rising field of graphene bolometric detectors.Comment: 5 figure

Structural basis for membrane attack complex inhibition by CD59

CD59 is an abundant immuno-regulatory receptor that protects human cells from damage during complement activation. Here we show how the receptor binds complement proteins C8 and C9 at the membrane to prevent insertion and polymerization of membrane attack complex (MAC) pores. We present cryo-electron microscopy structures of two inhibited MAC precursors known as C5b8 and C5b9. We discover that in both complexes, CD59 binds the pore-forming β-hairpins of C8 to form an intermolecular β-sheet that prevents membrane perforation. While bound to C8, CD59 deflects the cascading C9 β-hairpins, rerouting their trajectory into the membrane. Preventing insertion of C9 restricts structural transitions of subsequent monomers and indirectly halts MAC polymerization. We combine our structural data with cellular assays and molecular dynamics simulations to explain how the membrane environment impacts the dual roles of CD59 in controlling pore formation of MAC, and as a target of bacterial virulence factors which hijack CD59 to lyse human cells

Optical properties of an ensemble of G-centers in silicon

We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this point defect in silicon emitting in the telecommunication wavelength range, we unravel the recombination dynamics by time-resolved photoluminescence spectroscopy. More specifically, we performed detailed photoluminescence experiments as a function of excitation energy, incident power, irradiation fluence and temperature in order to study the impact of radiative and non-radiative recombination channels on the spectrum, yield and lifetime of G-centers. The sharp line emitting at 969 meV ($\sim$1280 nm) and the broad asymmetric sideband developing at lower energy share the same recombination dynamics as shown by time-resolved experiments performed selectively on each spectral component. This feature accounts for the common origin of the two emission bands which are unambiguously attributed to the zero-phonon line and to the corresponding phonon sideband. In the framework of the Huang-Rhys theory with non-perturbative calculations, we reach an estimation of 1.6$\pm$0.1 \angstrom for the spatial extension of the electronic wave function in the G-center. The radiative recombination time measured at low temperature lies in the 6 ns-range. The estimation of both radiative and non-radiative recombination rates as a function of temperature further demonstrate a constant radiative lifetime. Finally, although G-centers are shallow levels in silicon, we find a value of the Debye-Waller factor comparable to deep levels in wide-bandgap materials. Our results point out the potential of G-centers as a solid-state light source to be integrated into opto-electronic devices within a common silicon platform

Bistability of the Nuclear Polarisation created through optical pumping in InGaAs Quantum Dots

We show that optical pumping of electron spins in individual InGaAs quantum dots leads to strong nuclear polarisation that we measure via the Overhauser shift (OHS) in magneto-photoluminescence experiments between 0 and 4T. We find a strongly non-monotonous dependence of the OHS on the applied magnetic field, with a maximum nuclear polarisation of 40% for intermediate magnetic fields. We observe that the OHS is larger for nuclear fields anti-parallel to the external field than in the parallel configuration. A bistability in the dependence of the OHS on the spin polarization of the optically injected electrons is found. All our findings are qualitatively understood with a model based on a simple perturbative approach.Comment: Phys Rev B (in press