1,172 research outputs found
Curve classes on irreducible holomorphic symplectic varieties
We prove that the integral Hodge conjecture holds for 1-cycles on irreducible
holomorphic symplectic varieties of K3 type and of Generalized Kummer type. As
an application, we give a new proof of the integral Hodge conjecture for cubic
fourfolds.Comment: 15 page
Nondissipative Addressing for Time-Division SQUID Multiplexing
International audienceRecent and future astronomical instruments are based on a focal plane mapped by a large array of superconducting bolometers. Cryogenic analog multiplexing readout techniques, based on superconducting quantum interference devices (SQUIDs), are currently developed to achieve the readout of large arrays of this kind of low noise background-limited detectors. To effectively reduce the number of cryogenic wires (particularly, SQUID biasing), line/column addressing is currently used in time-division multiplexing, i.e., same biasing is applied to a few SQUIDs (on a line) of different columns. This technique should dramatically increase power consumption if parallel biasing is applied via resistors to isolate each column; the power budget is particularly limited on this kind of front-end cryogenic readout. A design with one transformer per SQUID is also used to read out SQUID biased in series with no excess of consumption and crosstalk. We propose here a new biasing technique using simple surface-mounted capacitors, which is easier to implement. These capacitors are used to parallel bias SQUIDs without additional Joule effect while minimizing crosstalk. However, capacitors do not allow dc biasing and need a current mean value equal to zero to avoid biasing source saturation. We have then tested square current biasing through capacitors on a commercial SQUID. This measurement shows that capacitors are able to proper bias SQUID and then to perform a nondissipative addressing for time-division SQUID multiplexing
Effective algebraic degeneracy
We prove that any nonconstant entire holomorphic curve from the complex line
C into a projective algebraic hypersurface X = X^n in P^{n+1}(C) of arbitrary
dimension n (at least 2) must be algebraically degenerate provided X is generic
if its degree d = deg(X) satisfies the effective lower bound: d larger than or
equal to n^{{(n+1)}^{n+5}}
Hot electron cooling by acoustic phonons in graphene
We have investigated the energy loss of hot electrons in metallic graphene by
means of GHz noise thermometry at liquid helium temperature. We observe the
electronic temperature T / V at low bias in agreement with the heat diffusion
to the leads described by the Wiedemann-Franz law. We report on
behavior at high bias, which corresponds to a T4 dependence
of the cooling power. This is the signature of a 2D acoustic phonon cooling
mechanism. From a heat equation analysis of the two regimes we extract accurate
values of the electron-acoustic phonon coupling constant in monolayer
graphene. Our measurements point to an important effect of lattice disorder in
the reduction of , not yet considered by theory. Moreover, our study
provides a strong and firm support to the rising field of graphene bolometric
detectors.Comment: 5 figure
LXRα phosphorylation in cardiometabolic disease: insight from mouse models
Posttranslational modifications, such as phosphorylation, are a powerful means by which the activity and function of nuclear receptors such as LXRα can be altered. However, despite the established importance of nuclear receptors in maintaining metabolic homeostasis, our understanding of how phosphorylation affects metabolic diseases is limited. The physiological consequences of LXRα phosphorylation have, until recently, been studied only in vitro or nonspecifically in animal models by pharmacologically or genetically altering the enzymes enhancing or inhibiting these modifications. Here we review recent reports on the physiological consequences of modifying LXRα phosphorylation at serine 196 (S196) in cardiometabolic disease, including nonalcoholic fatty liver disease, atherosclerosis, and obesity. A unifying theme from these studies is that LXRα S196 phosphorylation rewires the LXR-modulated transcriptome, which in turn alters physiological response to environmental signals, and that this is largely distinct from the LXR-ligand–dependent action
Optical properties of an ensemble of G-centers in silicon
We addressed the carrier dynamics in so-called G-centers in silicon
(consisting of substitutional-interstitial carbon pairs interacting with
interstitial silicons) obtained via ion implantation into a
silicon-on-insulator wafer. For this point defect in silicon emitting in the
telecommunication wavelength range, we unravel the recombination dynamics by
time-resolved photoluminescence spectroscopy. More specifically, we performed
detailed photoluminescence experiments as a function of excitation energy,
incident power, irradiation fluence and temperature in order to study the
impact of radiative and non-radiative recombination channels on the spectrum,
yield and lifetime of G-centers. The sharp line emitting at 969 meV (1280
nm) and the broad asymmetric sideband developing at lower energy share the same
recombination dynamics as shown by time-resolved experiments performed
selectively on each spectral component. This feature accounts for the common
origin of the two emission bands which are unambiguously attributed to the
zero-phonon line and to the corresponding phonon sideband. In the framework of
the Huang-Rhys theory with non-perturbative calculations, we reach an
estimation of 1.60.1 \angstrom for the spatial extension of the
electronic wave function in the G-center. The radiative recombination time
measured at low temperature lies in the 6 ns-range. The estimation of both
radiative and non-radiative recombination rates as a function of temperature
further demonstrate a constant radiative lifetime. Finally, although G-centers
are shallow levels in silicon, we find a value of the Debye-Waller factor
comparable to deep levels in wide-bandgap materials. Our results point out the
potential of G-centers as a solid-state light source to be integrated into
opto-electronic devices within a common silicon platform
Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields
We have studied a 50/50\AA superlattice of GaAs/AlGaAs
composition, modulation-doped with Si, to produce
cm electrons per superlattice period. The modulation-doping was tailored
to avoid the formation of Tamm states, and photoluminescence due to interband
transitions from extended superlattice states was detected. By studying the
effects of a quantizing magnetic field on the superlattice photoluminescence,
the miniband energy width, the reduced effective mass of the electron-hole
pair, and the band gap renormalization could be deduced.Comment: minor typing errors (minus sign in eq. (5)
Electric-Field Tuning of Spin-Dependent Exciton-Exciton Interactions in Coupled Quantum Wells
We have shown experimentally that an electric field decreases the energy
separation between the two components of a dense spin-polarized exciton gas in
a coupled double quantum well, from a maximum splitting of meV to
zero, at a field of 35 kV/cm. This decrease, due to the field-induced
deformation of the exciton wavefunction, is explained by an existing
calculation of the change in the spin-dependent exciton-exciton interaction
with the electron-hole separation. However, a new theory that considers the
modification of screening with that separation is needed to account for the
observed dependence on excitation power of the individual energies of the two
exciton components.Comment: 5 pages, 4 eps figures, RevTeX, Physical Review Letters (in press
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