Band structure and optical properties of germanium sheet polymers

The band structure of H-terminated Ge sheet polymers is calculated using density-functional theory in the local density approximation and compared to the optical properties of epitaxial polygermyne layers as determined from reflection, photoluminescence, and photoluminescence excitation measurements. A direct band gap of 1.7 eV is predicted and a near resonant excitation of the photoluminescence is observed experimentally close to this energy

Горизонтальные классификаторы. Основы теории и расчета: моногр.

Приведены технологические схемы получения строительных песков при гидромеханизированной добыче, основные конструктивные схемы классификаторов, используемых при получении строительных песков. Особое внимание уделено изучению процесса взаимодействия проточной части горизонтального классификатора с совокупностью твердых частиц, расположенных в горизонтальном ускоренном потоке несущей среды. Выполнено математическое моделирование ускоренного движения горизонтального потока и твердых частиц в пределах разнонаклонных поверхностей горизонтального классификатора. Экспериментально изучено гравитационное осаждение твердых частиц, рассмотренное в виде вертикальной и горизонтальной составляющих, а также влияние стесненности движения и перемещения твердых частиц относительно несущего горизонтального потока. Приведена методика расчета и выбора параметров классификаторов, информация об опыте проектирования и внедрения горизонтальных классификаторов в составе добычных комплексов при освоении обводненных месторождений песков. Монография может быть полезна студентам, инженерно-техническим работникам, сотрудникам высших учебных заведений, научно-исследовательских институтов и проектных организаций горной промышленности

Cytosolic calcium homeostasis in fungi: roles of plasma membrane transport and intracellular sequestration of calcium.

Cytosolic free calcium ([Ca2+]c) has been measured in the mycelial fungus Neurospora crassa with Ca2(+)-selective microelectrodes. The mean value of [Ca2+]c is 92 +/- 15 nM and it is insensitive to external pH values between 5.8 and 8.4. Simultaneous measurement of membrane potential enables the electrochemical potential difference for Ca2+ across the plasma membrane to be estimated as about -60 kJ.mol-1-a value that cannot be sustained either by a simple Ca2(+)-ATPase, or, in alkaline conditions, by straightforward H+/Ca2+ exchange with a stoichiometric ratio of less than 5 H+/Ca2+. We propose that the most likely alternative mechanism of Ca2+ efflux is ATP-driven H+/Ca2+. In accord with this proposal, depletion of the ATP level from 2.5 to 0.5 mM by CN- elicits an increase in [Ca2+]c, but only in alkaline conditions in which the putative H+/Ca2(+)-ATPase would be selectively stalled. The insensitivity of Ca2+ homeostasis to CN- in more acid conditions implies that the Km (ATP) of the transport system is 100 microM or less. The increase in [Ca2+]c in the presence of CN- at pH 8.4 (50 nM.min-1) is compared with 45Ca2+ influx (0.62 mM.min-1) under the same conditions. The proportion of entering Ca2+ remaining free in the cytosol is only 8 x 10(-5), and since the concentration of available chelation sites on Ca2(+)-binding proteins is unlikely to exceed 100 microM, a major role for the fungal vacuole in short-term Ca2+ homeostasis is indicated. This notion is supported by the observation that cytosolic Ca2+ homeostasis is disrupted by a protonophore, which rapidly abolishes the driving force (a transmembrane pH difference) for Ca2+ uptake into fungal vacuoles

In situ defect etching of strained-Si layers with HCl gas

Experiments on in situ chemical etching of strained-Si films with gaseous HCl in a commercial CVD reactor are reported. After growth of a virtual Si1-xGex substrate and the deposition of a strained-Si cap layer HCl is applied at 800 °C. A pronounced dependence of the average etch rate on the strain of the Si cap layer is observed. Furthermore, the etch process is sensitive to crystal defects, leading to etch pits at the site of threading dislocations. This kind of defect etching allows to characterize the number and distribution of threading dislocations on the whole wafer area (e.g. 200 mm) without additional equipment costs