Analysis of the serotonergic system in a mouse model of Rett syndrome reveals unusual upregulation of serotonin receptor 5b

Mutations in the transcription factor methyl-CpG-binding-protein 2 (MeCP2) cause a delayed-onset neurodevelopmental disorder known as Rett syndrome (RTT). Although alteration in serotonin levels have been reported in RTT patients, the molecular mechanisms underlying these defects are not well understood. Therefore, we chose to investigate the serotonergic system in hippocampus and brainstem of male Mecp2(-/y) knock-out mice in the B6.129P2(C)-Mecp2(tm1.1Bird) mouse model of RTT. The serotonergic system in mouse is comprised of 16 genes, whose mRNA expression profile was analyzed by quantitative RT-PCR. Mecp2(-/y) mice are an established animal model for RTT displaying most of the cognitive and physical impairments of human patients and the selected areas receive significant modulation through serotonin. Using anatomically and functional characterized areas, we found region-specific differential expression between wild type and Mecp2(-/y) mice at post-natal day 40. In brainstem, we found five genes to be dysregulated, while in hippocampus, two genes were dysregulated. The one gene dysregulated in both brain regions was dopamine decarboxylase, but of special interest is the serotonin receptor 5b (5-ht(5b)), which showed 75-fold dysregulation in brainstem of Mecp2(-/y) mice. This dysregulation was not due to upregulation, but due to failure of down-regulation in Mecp2(-/y) mice during development. Detailed analysis of 5-ht(5b) revealed a receptor that localizes to endosomes and interacts with G(αi) proteins

Relating localized nanoparticle resonances to an associated antenna problem

We conceptually unify the description of resonances existing at metallic nanoparticles and optical nanowire antennas. To this end the nanoantenna is treated as a Fabry-Perot resonator with arbitrary semi-nanoparticles forming the terminations. We show that the frequencies of the quasi-static dipolar resonances of these nanoparticles coincide with the frequency where the phase of the complex reflection coefficient of the fundamental propagating plasmon polariton mode at the wire termination amounts to $\pi$. The lowest order Fabry-Perot resonance of the optical wire antenna occurs therefore even for a negligible wire length. This approach can be used either to easily calculate resonance frequencies for arbitrarily shaped nanoparticles or for tuning the resonance of nanoantennas by varying their termination.Comment: Submitted to Phys. Rev.

Structural dynamics of incommensurate charge-density waves tracked by ultrafast low-energy electron diffraction

We study the non-equilibrium structural dynamics of the incommensurate and nearly commensurate charge-density wave (CDW) phases in 1T-TaS2. Employing ultrafast low-energy electron diffraction with 1 ps temporal resolution, we investigate the ultrafast quench and recovery of the CDW-coupled periodic lattice distortion (PLD). Sequential structural relaxation processes are observed by tracking the intensities of main lattice as well as satellite diffraction peaks and the diffuse scattering background. Comparing distinct groups of diffraction peaks, we disentangle the ultrafast quench of the PLD amplitude from phonon-related reductions of the diffraction intensity. Fluence-dependent relaxation cycles reveal a long-lived partial suppression of the order parameter for up to 60 ps, far outlasting the initial amplitude recovery and electron-phonon scattering times. This delayed return to a quasi-thermal level is controlled by lattice thermalization and coincides with the population of zone-center acoustic modes, as evidenced by a structured diffuse background. The long-lived non-equilibrium order parameter suppression suggests hot populations of CDW-coupled lattice modes. Finally, a broadening of the superlattice peaks is observed at high fluences, pointing to a non-linear generation of phase fluctuation

Disorder-induced phonon self-energy of semiconductors with binary isotopic composition

Self-energy effects of Raman phonons in isotopically disordered semiconductors are deduced by perturbation theory and compared to experimental data. In contrast to the acoustic frequency region, higher-order terms contribute significantly to the self-energy at optical phonon frequencies. The asymmetric dependence of the self-energy of a binary isotope system $m_{1-x} M_x$ on the concentration of the heavier isotope mass x can be explained by taking into account second- and third-order perturbation terms. For elemental semiconductors, the maximum of the self-energy occurs at concentrations with $0.5<x<0.7$, depending on the strength of the third-order term. Reasonable approximations are imposed that allow us to derive explicit expressions for the ratio of successive perturbation terms of the real and the imaginary part of the self-energy. This basic theoretical approach is compatible with Raman spectroscopic results on diamond and silicon, with calculations based on the coherent potential approximation, and with theoretical results obtained using {\it ab initio} electronic theory. The extension of the formalism to binary compounds, by taking into account the eigenvectors at the individual sublattices, is straightforward. In this manner, we interpret recent experimental results on the disorder-induced broadening of the TO (folded) modes of SiC with a $^{13}{\rm C}$-enriched carbon sublattice. \cite{Rohmfeld00,Rohmfeld01}Comment: 29 pages, 9 figures, 2 tables, submitted to PR