Accurate equivalent-network modelling of GaAs/AlAs based resonant tunneling diodes with thin barrier layers

The small-signal intrinsic impedance of GaAs/AlAs based resonant tunnelling diodes with thin barriers has been measured at room temperature over the full 0-2 V bias-voltage and 0.05-40.05 GHz frequency ranges, on stable, non-oscillating devices. The classical Esaki and the quantum-inductance equivalent circuits were used to model the impedance for CAD purposes. Information about the quasibound-state lifetime against bias-voltage was extracte

Fabrication of short GaAs wet-etched mirror lasers and their complex spectral behaviour

A versatile fabrication technique for GaAs-AlGaAs wet-etched mirror lasers is presented. This technique works independently of the Al concentration in the cladding layers up to a value of 70%, and it requires four photolithography steps. Ridge waveguide lasers have been successfully processed using a double heterostructure (DHS) as well as graded index separate confinement heterostructures (GRINSCH) having different quantum-well (QW) active layers. This technique is used to fabricate short-cavity lasers in GRINSCH structures having GaAs multiple-quantum-well (MQW) or bulk active layers. Laser operation was obtained in a 29-µm-long device using a 5-QW structure. Short lasers with QW active layers show a complex spectral behavior. These lasers operate at higher current densities (~20 kA/cm2) and emit light at more than one wavelength. This implies that higher order transitions are involved which is not the case when using a bulk GaAs active layer. Besides the two peaks corresponding to the n=1 and n=2 transitions, we found an intermediate peak which corresponds presumably to the forbidden transition E1-HH

Low-loss, low-confinement GaAs-AlGaAs DQW laser diode with optical trap layer for high-power operation

A low-confinement asymmetric GaAs-AlGaAs double-quantum-well molecular-beam-epitaxy grown laser diode structure with optical trap layer is characterized, The value of the internal absorption coefficient is as low as 1.4 cm-1, while keeping the series resistance at values comparable cm with symmetrical quantum-well gradient index structures in the same material system. Uncoated devices show COD values of 35 mW/µm. If coated, this should scale to about 90 mW/µm. The threshold current density is about 1000 A/cm2 for 2-mm-long devices and a considerable part of it is probably due to recombination in the optical trap layer. Fundamental mode operation is limited to 120-180 mW for 6.5-µm-wide ridge waveguide uncoated devices and to 200-300 mW for 13.5-µm-wide ones, because of thermal waveguiding effects. These values are measured under pulsed conditions, 10 µs/l m

Polarization stabilization in vertical-cavity surface-emitting lasers through asymmetric current injection

We present experimental evidence that asymmetric current injection in intracavity contacted vertical-cavity surface-emitting lasers (VCSELs) stabilizes the polarization of the emitted light. Anisotropies in the gain and loss mechanisms introduced by asymmetric current injection are considered to explain this effect. The design scheme opens perspectives to obtain actual polarization control in VCSEL

A full alternative for the RTD quantum-inductance equivalent-circuit model

Under specific conditions, the small-signal series/parallel double-RC equivalent-network is a novel full mutual alternative for the resonant tunnelling diode quantum-inductance circuit model. Network optimisations to accurately match measured intrinsic impedances of stable, non-oscillating GaAs/AlAs devices, pointed at these conditions. The capacitance Cw of the series-RC branch, peaks needle-sharp at the negative dynamic conductance "maximum, indicating carrier discharge from the quantum well. The Rb Cw -time constant equals Lq Gd of the quantum-inductance model, so it is also an indication of the quasibound-state lifetime in the well. For CAD purposes, a very good RTD intrinsic impedance description in the entire bias/frequency space (0-2 V; 0.05-40.05 GHz) is obtained with frequency-independent intrinsic elements, scalable with device area