16 research outputs found
Theory and design of InGaAsBi mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 m on InP substrates
We present a theoretical analysis and optimisation of the properties and
performance of mid-infrared semiconductor lasers based on the dilute bismide
alloy InGaAsBi, grown on conventional (001) InP
substrates. The ability to independently vary the epitaxial strain and emission
wavelength in this quaternary alloy provides significant scope for band
structure engineering. Our calculations demonstrate that structures based on
compressively strained InGaAsBi quantum wells (QWs)
can readily achieve emission wavelengths in the 3 -- 5 m range, and that
these QWs have large type-I band offsets. As such, these structures have the
potential to overcome a number of limitations commonly associated with this
application-rich but technologically challenging wavelength range. By
considering structures having (i) fixed QW thickness and variable strain, and
(ii) fixed strain and variable QW thickness, we quantify key trends in the
properties and performance as functions of the alloy composition, structural
properties, and emission wavelength, and on this basis identify routes towards
the realisation of optimised devices for practical applications. Our analysis
suggests that simple laser structures -- incorporating
InGaAsBi QWs and unstrained ternary
InGaAs barriers -- which are compatible with established
epitaxial growth, provide a route to realising InP-based mid-infrared diode
lasers.Comment: Submitted versio
Large-Area Single-Mode GaSb-based VCSELs using an Inverted Surface Relief
Large-area GaSb-based BTJ VCSELs at ∼2.35 μm were fabricated using an inverted surface relief technique to support the single transverse mode operation. The devices operate in continuous-wave and are (electro-)thermally tunable over 6 nm
Comprehensive analysis of electrically-pumped GaSb-based VCSELs
This paper discusses several performance-related aspects of electrically-pumped GaSb-based buried tunnel junction VCSELs with an emission wavelength of 2.6 mu m based on theoretical and experimental results. These results allow a deeper insight into the internal device physics, such as radial diffusion of carriers, maximum continuous-wave operating temperature, diffraction loss, internal temperature, gain and loss parameters, internal quantum efficiency of the active region etc. These parameters can be taken into account while designing mid-infrared lasers which leads to an improved device performance. A simple thermal model of the devices based on the two-dimensional (2-D) finite element method using the material data from the literature is also presented. In addition, an application-based result utilizing these lasers for the measurement of absolute water vapor concentration by wavelength modulation spectroscopy (WMS) method are also described, hinting that devices are well-suited for the targeted sensing applications
Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy
We report self-induced growth of vertically aligned (i.e. along the [ 111] direction), free-standing InAs nanowires on Si(111) substrates by solid-source molecular beam epitaxy. Implementation of an ultrathin amorphous SiO(x) mask on Si(111) facilitated epitaxial InAs nanowire growth, as confirmed by high-resolution x-ray diffraction 2 theta-omega scans and transmission electron microscopy. Depending on growth temperature (in the range of 400-520 degrees C) substantial size variation of both nanowire length and diameter was found under preservation of uniform, non-tapered hexagon-shaped geometries. The majority of InAs nanowires exhibited phase-pure zinc blende crystal structure with few defective regions consisting of stacking faults. Photoluminescence spectroscopy at 20 K revealed peak emission of the InAs nanowires at 0.445 eV, which is similar to 30 meV blueshifted with respect to the emission of the bulk InAs reference due to radial quantum confinement effects. These results show a promising route towards integration of well-aligned, high structural quality InAs-based nanowires with the desired aspect ratio and tailored emission wavelengths on an Si platform