Large-Area Single-Mode GaSb-based VCSELs using an Inverted Surface Relief

Authors
Publication date
1 January 2010
Publisher
Doi

    Abstract

    Large-area GaSb-based BTJ VCSELs at ∼2.35 μm were fabricated using an inverted surface relief technique to support the single transverse mode operation. The devices operate in continuous-wave and are (electro-)thermally tunable over 6 nm

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