5,122 research outputs found

    Collective charge density wave motion through an ensemble of Aharonov-Bohm rings

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    We investigate theoretically the collective charge density wave motion through an ensemble of small disordered Aharonov-Bohm rings. It is shown that the magnetic flux modulates the threshold field and the magnetoresistance with a half flux quantum periodicity Φ0/2=h/2e\Phi_{0}/2=h/2e, resulting from ensemble averaging over random scattering phases of multiple rings. The magnitude of the magnetoresistance oscillations decreases rapidly with increasing bias. This is consistent with recent experiments on NbSe3NbSe_3 in presence of columnar defects [Phys. Rev. Lett. 78, 919 (1997)].Comment: 4 pages Revtex, 2 figures. Submitted to Phys. Rev. Let

    Comment on "Peierls Gap in Mesoscopic Ring Threated by a Magnetic Flux"

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    In a recent letter, Yi et al. PRL 78, 3523 (1997), have considered the stability of a Charge Density Wave in a one-dimensional ring, in the presence of an Aharonov-Bohm flux. This comment shows that, in one dimension, the stability of the Charge Density Wave depends on the parity of the number of electrons in the ring. This effect is similar to the parity effect known for the persistent current in one-dimensional rings.Comment: Latex, 1 page, 2 figure

    Spin-torque switching: Fokker-Planck rate calculation

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    We describe a new approach to understanding and calculating magnetization switching rates and noise in the recently observed phenomenon of "spin-torque switching". In this phenomenon, which has possible applications to information storage, a large current passing from a pinned ferromagnetic (FM) layer to a free FM layer switches the free layer. Our main result is that the spin-torque effect increases the Arrhenius factor exp(E/kT)\exp(-E/kT) in the switching rate, not by lowering the barrier EE, but by raising the effective spin temperature TT. To calculate this effect quantitatively, we extend Kramers' 1940 treatment of reaction rates, deriving and solving a Fokker-Planck equation for the energy distribution including a current-induced spin torque of the Slonczewski type. This method can be used to calculate slow switching rates without long-time simulations; in this Letter we calculate rates for telegraph noise that are in good qualitative agreement with recent experiments. The method also allows the calculation of current-induced magnetic noise in CPP (current perpendicular to plane) spin valve read heads.Comment: 11 pages, 8 figures, 1 appendix Original version in Nature format, replaced by Phys. Rev. Letters format. No substantive change

    Physiological requirements for carbonate precipitation during biofilm development of Bacillus subtilis etfA mutant

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    Although the implications of calcium carbonate (CaCO(3)) precipitation by microorganisms in natural environments are quite relevant, the physiology and genetics of this phenomenon are poorly understood. We have chosen Bacillus subtilis 168 as our model to study which physiological aspects are associated with CaCO(3) (calcite) formation during biofilm development when grown on precipitation medium. A B. subtilis eftA mutant named FBC5 impaired in calcite precipitation was used for comparative studies. Our results demonstrate that inactivation of etfA causes a decrease in the pH of the precipitation medium during biofilm development. Further analysis demonstrated that eftA extrudes an excess of 0.7 mol H(+) L(-1) with respect to B. subtilis 168 strain. Using media buffered at different pH values, we were able to control calcite formation. Because etfA encodes the alpha-subunit of a putative flavoprotein involved in fatty acid metabolism, we compared the intracellular levels of NADH among strains. Our physiological assay showed that FBC5 accumulated up to 32 times more NADH than the wild-type strain. We propose that the accumulation of NADH causes a deregulation in the generation of the proton motive force (DeltamicroH(+)) in FBC5 producing the acidification

    Is Random Close Packing of Spheres Well Defined?

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    Despite its long history, there are many fundamental issues concerning random packings of spheres that remain elusive, including a precise definition of random close packing (RCP). We argue that the current picture of RCP cannot be made mathematically precise and support this conclusion via a molecular dynamics study of hard spheres using the Lubachevsky-Stillinger compression algorithm. We suggest that this impasse can be broken by introducing the new concept of a maximally random jammed state, which can be made precise.Comment: 6 pages total, 2 figure

    Surface effects on nanowire transport: numerical investigation using the Boltzmann equation

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    A direct numerical solution of the steady-state Boltzmann equation in a cylindrical geometry is reported. Finite-size effects are investigated in large semiconducting nanowires using the relaxation-time approximation. A nanowire is modelled as a combination of an interior with local transport parameters identical to those in the bulk, and a finite surface region across whose width the carrier density decays radially to zero. The roughness of the surface is incorporated by using lower relaxation-times there than in the interior. An argument supported by our numerical results challenges a commonly used zero-width parametrization of the surface layer. In the non-degenerate limit, appropriate for moderately doped semiconductors, a finite surface width model does produce a positive longitudinal magneto-conductance, in agreement with existing theory. However, the effect is seen to be quite small (a few per cent) for realistic values of the wire parameters even at the highest practical magnetic fields. Physical insights emerging from the results are discussed.Comment: 15 pages, 7 figure

    On the derivation of the t-J model: electron spectrum and exchange interactions in narrow energy bands

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    A derivation of the t-J model of a highly-correlated solid is given starting from the general many-electron Hamiltonian with account of the non-orthogonality of atomic wave functions. Asymmetry of the Hubbard subbands (i.e. of ``electron'' and ``hole''cases) for a nearly half-filled bare band is demonstrated. The non-orthogonality corrections are shown to lead to occurrence of indirect antiferromagnetic exchange interaction even in the limit of the infinite on-site Coulomb repulsion. Consequences of this treatment for the magnetism formation in narrow energy bands are discussed. Peculiarities of the case of ``frustrated'' lattices, which contain triangles of nearest neighbors, are considered.Comment: 4 pages, RevTe

    Conductance Fluctuations in a Metallic Wire Interrupted by a Tunnel Junction

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    The conductance fluctuations of a metallic wire which is interrupted by a small tunnel junction has been explored experimentally. In this system, the bias voltage V, which drops almost completely inside the tunnel barrier, is used to probe the energy dependence of conductance fluctuations due to disorder in the wire. We find that the variance of the fluctuations is directly proportional to V. The experimental data are consistently described by a theoretical model with two phenomenological parameters: the phase breaking time at low temperatures and the diffusion coefficient.Comment: 9 pages RevTeX and 4 PS figures (accepted for publication in Physical Review Letters

    Screening and interlayer coupling in multilayer graphene field-effect transistors

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    With the motivation of improving the performance and reliability of aggressively scaled nano-patterned graphene field-effect transistors, we present the first systematic experimental study on charge and current distribution in multilayer graphene field-effect transistors. We find a very particular thickness dependence for Ion, Ioff, and the Ion/Ioff ratio, and propose a resistor network model including screening and interlayer coupling to explain the experimental findings. In particular, our model does not invoke modification of the linear energy-band structure of graphene for the multilayer case. Noise reduction in nano-scale few-layer graphene transistors is experimentally demonstrated and can be understood within this model as well.Comment: 13 pages, 4 figures, 20 reference
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