We describe a new approach to understanding and calculating magnetization
switching rates and noise in the recently observed phenomenon of "spin-torque
switching". In this phenomenon, which has possible applications to information
storage, a large current passing from a pinned ferromagnetic (FM) layer to a
free FM layer switches the free layer. Our main result is that the spin-torque
effect increases the Arrhenius factor exp(−E/kT) in the switching rate, not
by lowering the barrier E, but by raising the effective spin temperature T.
To calculate this effect quantitatively, we extend Kramers' 1940 treatment of
reaction rates, deriving and solving a Fokker-Planck equation for the energy
distribution including a current-induced spin torque of the Slonczewski type.
This method can be used to calculate slow switching rates without long-time
simulations; in this Letter we calculate rates for telegraph noise that are in
good qualitative agreement with recent experiments. The method also allows the
calculation of current-induced magnetic noise in CPP (current perpendicular to
plane) spin valve read heads.Comment: 11 pages, 8 figures, 1 appendix Original version in Nature format,
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