26 research outputs found
MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon
Full text linkThe application of low energy accelerators to analysis problems
No full textDUE TO COPYRIGHT RESTRICTIONS ONLY AVAILABLE FOR CONSULTATION AT ASTON UNIVERSITY LIBRARY AND INFORMATION SERVICES WITH PRIOR ARRANGEMEN
Study of the excitation functions of27Al(n, α)24Na,27Al(n, p)27Mg and28Si(n, p)28Al reactions
No full textRecommended from our members
MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon
No full textAmorphous carbon (a-C) films were deposited on Si(100) wafers by a filtered cathodicvacuum arc (FCVA) plasma source. A negative electrical bias was applied tothe silicon substrate in order to control the incident energy of carbon ions. Effects ofthe electrical bias on the a-C/Si interface characteristics were investigated by usingstandard Rutherford backscattering spectrometry (RBS) in the channeling modewith 2.1-MeV He2+ ions. The shape of the Si surface peaks of the RBS/channelingspectra reflects the degree of interface disorder due to atomic displacement fromthe bulk position of the Si crystal. Details of the analysis method developed aredescribed. It was found that the width of the a-C/Si interface increases linearlywith the substrate bias voltage but not the thickness of the a-C film
An investigation by neutron activation of the ratio after the reaction MgO+Fe2O3 → MgFe2O4
No full textRecommended from our members
Optical emission spectra of a copper plasma produced by a metal vapor vacuum arc source
No full textRecommended from our members
Optical emission spectra of a copper plasma produced by a metal vapor vacuum arc source
No full text
