Fermentability of whole oat flour, PeriTec flour and bran by Lactobacillus plantarum

4 páginas, 2 tablas, 1 figuraWhole oat flour obtained by hammer milling was fermented with Lactobacillus plantarum along with white flour and bran in order to compare the suitability of these substrates for the production of a probiotic beverage. The three substrates show a viable cell concentration at the end of fermentation above the minimum required in a probiotic product. The highest cell concentration was observed in white flour (9.16 Log10 CFU/mL) and the lowest in the bran sample (8.17 Log10 CFU/mL)Peer reviewe

Membrane-transferring regions of gp41 as targets for HIV-1 fusion inhibition and viral neutralization

12 páginas, 4 figurasThe fusogenic function of HIV-1 gp41 transmembrane Env subunit relies on two different kinds of structural elements: i) a collapsible ectodomain structure (the hairpin or six-helix bundle) that opens and closes, and ii) two membrane- transferring regions (MTRs), the fusion peptide (FP) and the membrane-proximal external region (MPER), which ensure coupling of hairpin closure to apposition and fusion of cell and viral membranes. The isolation of naturally produced short peptides and neutralizing IgG-s, that interact with FP and MPER, respectively, and block viral infection, suggests that these conserved regions might represent useful targets for clinical intervention. Furthermore, MTR-derived peptides have been shown to be membrane-active. Here, it is discussed the potential use of these molecules and how the analysis of their membrane activity in vitro could contribute to the development of HIV fusion inhibitors and effective immunogensThe authors wish to thank financial support obtained from Spanish MICINN (BIO2008- 00772) (JLN) and University of the Basque Country (GIU 06/42 and DIPE08/12) (NH and JLN).Peer reviewe

Contact Resistance Optimization in MoS2 Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS2)-FETs, have gained significant attention for their potential for ultrashort channels, thereby extending Moore’s law. However, MoS2–FETs are prone to the formation of Schottky barriers at the metal-MoS2 interface, resulting in high contact resistance (Rc) and, consequently, reduced transistor currents in the ON-state. Our study explores the modification of MoS2 to induce the formation of conductive 1T-MoS2 at the metal-MoS2 interface via reverse sputtering. MoS2–FETs exposed to optimized reverse sputtering conditions in the contact area show Rc values reduced to less than 50% of their untreated counterparts. This reduction translates into improvements in other electrical characteristics, such as higher ON-state currents. Since reverse sputtering is a standard semiconductor process that enhances the electrical performance of MoS2–FETs, it has great potential for broader application scenarios in 2DM-based microelectronic devices and circuits

Менеджмент

Присвячується нашому вчителю - професору Саллі В.І. та академіку Амоші О.І. - мудрому наставнику і колезі.Навчальний посібник призначений для формування у майбутніх менеджерів управлінського мислення та системи спеціальних знань у галузі менеджменту, формування розуміння концептуальних основ системного управління організаціями, набуття умінь аналізу середовища діяльності організації, прийняття адекватних управлінських рішень

Проблемы и перспективы развития тепловой энергетики в России

Данная статья посвящена обзору экономических проблем и перспектив развития тепловой энергетики в России. Проведенное исследование показало - техническое оборудование тепловых станций морально устарело, что ведет к снижению технико-экономических показателей. Перспективы развития этой отрасли требуют хорошо скоординированных научно-технических усилий. Проблемы теплоэнергетики в стране, как никогда актуальны

Zero Bias Power Detector Circuits based on MoS2_2 Field Effect Transistors on Wafer-Scale Flexible Substrates

We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $\mu$m thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS$_2$ sheets, grown with different processes and showing different thicknesses, are analyzed and compared from the single device fabrication and characterization steps to the circuit level. The power detector prototypes exploit the nonlinearity of the transistors above the cut-off frequency of the devices. The proposed detectors are designed employing a transistor model based on measurement results. The fabricated circuits operate in Ku-band between 12 and 18 GHz, with a demonstrated voltage responsivity of 45 V/W at 18 GHz in the case of monolayer MoS2 and 104 V/W at 16 GHz in the case of multilayer MoS$_2$, both achieved without applied DC bias. They are the best performing power detectors fabricated on flexible substrate reported to date. The measured dynamic range exceeds 30 dB outperforming other semiconductor technologies like silicon complementary metal oxide semiconductor (CMOS) circuits and GaAs Schottky diodes.Comment: 28 page