Raman Fingerprints of Atomically Precise Graphene Nanoribbons.

Bottom-up approaches allow the production of ultranarrow and atomically precise graphene nanoribbons (GNRs) with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab initio simulations, we show that GNR width, edge geometry, and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm(-1) is particularly sensitive to edge morphology and functionalization, while the D peak dispersion can be used to uniquely fingerprint the presence of GNRs and differentiates them from other sp(2) carbon nanostructures.We acknowledge funding from: the Alexander von Humboldt Foundation in the framework of the Sofja Kovalevskaja Award, endowed by the Federal Ministry for Education and Research of Germany; the ESF project GOSPEL (Ref. No. 09-EuroGRAPHENE-FP-001); the European Research Council (grant NOC-2D, NANOGRAPH, and Hetero2D); the Italian Ministry of Research through the national projects PRIN-GRAF (Grant No. 20105ZZTSE) and FIRB-FLASHit (Grant No. RBFR12SWOJ); the DFG Priority Program SPP 1459; the Graphene Flagship (Ref. No. CNECT-ICT-604391); the EU project MoQuaS; EPSRC Grants (EP/K01711X/1, EP/K017144/1); the EU grant GENIUS; a Royal Society Wolfson Research Merit Award. Computer time was granted by PRACE at the CINECA Supercomputing Center (Grant No. PRA06 1348), and by the Center for Functional Nanomaterials at Brookhaven National Laboratory, supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under contract number DE-SC0012704.This is the author accepted manuscript. The final version is available from the American Chemical Society via http://dx.doi.org/10.1021/acs.nanolett.5b0418

Raman scattering efficiency of graphene

We determine the Raman scattering efficiency of the G and 2D peaks in graphene. Three substrates are used: silicon covered with 300 or 90 nm oxide, and calcium fluoride (CaF2). On Si/SiOx, the areas of the G and 2D peak show a strong dependence on the substrate due to interference effects, while on CaF2 no significant dependence is detected. Unintentional doping is reduced by placing graphene on CaF2. We determine the Raman scattering efficiency by comparison with the 322 cm -1 peak area of CaF2. At 2.41 eV, the Raman efficiency of the G peak is ∼200×10-5 m-1Sr-1, and changes with the excitation energy to the power of 4. The 2D Raman efficiency is at least one order of magnitude higher than that of the G peak, with a different excitation energy dependence. © 2013 American Physical Society

Tunable D peak in gated graphene

We report the gate-modulated Raman spectrum of defective graphene. We show that the intensity of the D peak can be reversibly tuned by applying a gate voltage. This effect is attributed to chemical functionalization of the graphene crystal lattice, generated by an electrochemical reaction involving the water layer trapped at the interface between silicon and graphene. [Figure not available: see fulltext.] © 2013 Tsinghua University Press and Springer-Verlag Berlin Heidelberg

Controlling the magnetic anisotropy in Cr₂Ge₂Te₆ by electrostatic gating

Electrical control of magnetism in van der Waals ferromagnetic semiconductors is an important step in creating novel spintronic devices, capable of processing and storing information, with these materials. For practical devices, electrical control at or near room temperature is sought, but most layered ferromagnetic semiconductors exhibit Curie temperatures below 100 K. Here, we show that electrostatic gating of thin chromium germanium telluride (Cr2Ge2Te6) crystals can be used to modulate the magnetic phase transition and magnetic anisotropy of this layered ferromagnetic semiconductor and increase its Curie temperature. Using an electric double-layer transistor device, we observe ferromagnetism in the material at temperatures up to 200 K and find that its magnetic easy axis is in the in-plane direction, in contrast to the out-of-plane easy axis of undoped Cr2Ge2Te6. Our analysis suggests that heavy doping promotes a double-exchange mechanism that is mediated by free carriers, which dominates over the superexchange mechanism of the original insulating state