971 research outputs found
Carrier lifetime assessment in integrated Ge waveguide devices
Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For a 1 pm wide Ge waveguide, a lifetime of 1.6 ns is estimated for a carrier density of around 2 x10(19) cm(-3)
Extraction of carrier lifetime in Ge waveguides using pump probe spectroscopy
Carrier lifetimes in Ge-on-Si waveguides are deduced using time-resolved infrared transmission pump-probe spectroscopy. Dynamics of pump-induced excess carriers generated in waveguides with varying Ge thickness and width is probed using a CW laser. The lifetimes of these excess carriers strongly depend on the thickness and width of the waveguide due to defect assisted surface recombination. Interface recombination velocities of 0.975 x 10(4) cm/s and 1.45 x 10(4) cm/s were extracted for the Ge/Si and the Ge/SiO2 interfaces, respectively. Published by AIP Publishing
High-efficiency fiber-to-chip grating couplers realized using an advanced CMOS-compatible silicon-on-insulator platform
Compact thermally tunable silicon racetrack modulators based on an asymmetric waveguide
A compact wavelength-tunable 10-Gb/s silicon racetrack modulator with integrated thermo-optic heater is demonstrated by using a waveguide with an asymmetric cross section, combining the compact footprint of microdisk modulators with the design simplicity of regular racetrack or ring modulators. The outer perimeter of the asymmetric racetrack modulator is fully etched to maximize optical confinement, and the inner waveguide edge is shallowly etched to maintain an electrically conductive path to the embedded p-n diode and to control the propagation of the asymmetric optical mode and its coupling to the bus waveguide. The resistive heating elements based on highly doped Si strips are implemented at the outer edge of the modulator for thermo-optic control. The asymmetric modulators can be fabricated along with Si wire waveguides and shallowly etched fiber-grating couplers using a simple process flow involving just two Si-patterning steps. Devices with a bending radius of 10 mu m and a novel "T"-shaped p-n diode layout have been fabricated, and exhibit electro-optic modulation and heater efficiencies of 28 pm/V and 42 pm/mW, respectively. At 10 Gb/s, a stable extinction ratio of 10 dB is demonstrated from a 2V(pp) drive swing, which can be maintained over a wavelength range of 4.6 nm by thermally tuning the modulator. This is equivalent with a temperature variation of about 62 degrees C
Inferring choice criteria with mixture IRT models: A demonstration using ad hoc and goal-derived categories
Whether it pertains to the foods to buy when one is on a diet, the items to take along to the beach on one’s day off or
(perish the thought) the belongings to save from one’s burning house, choice is ubiquitous. We aim to determine from
choices the criteria individuals use when they select objects from among a set of candidates. In order to do so we employ
a mixture IRT (item-response theory) model that capitalizes on the insights that objects are chosen more often the better
they meet the choice criteria and that the use of different criteria is reflected in inter-individual selection differences. The
model is found to account for the inter-individual selection differences for 10 ad hoc and goal-derived categories. Its
parameters can be related to selection criteria that are frequently thought of in the context of these categories. These
results suggest that mixture IRT models allow one to infer from mere choice behavior the criteria individuals used to
select/discard objects. Potential applications of mixture IRT models in other judgment and decision making contexts are
discussed
Low-voltage Ge avalanche photodetector for highly sensitive 10Gb/s Si photonic receivers
We demonstrate low-voltage germanium waveguide avalanche photodetectors (APD) with gain-bandwidth product of 88GHz. A 7.1dB sensitivity improvement is demonstrated for an APD wire-bonded to a 10Gb/s CMOS transimpedance amplifier, at -6.2V APD bias
Epidemiology of diabetes mellitus among 193,435 cats attending primary-care veterinary practices in England
BACKGROUND: Diabetes mellitus (DM) is a common endocrine disease of cats. The prevalence of DM in cats in England is not well‐defined. HYPOTHESIS/OBJECTIVES: To estimate the prevalence and identify risk factors for DM in a large population of cats attending primary‐care practices. ANIMALS: A cohort of 193,563 cats in the VetCompass Programme attending 118 primary‐care practices in England. METHODS: Cross‐sectional analysis of cohort clinical data. Data were extracted covering September 1st 2009 and August 31st 2014. Period prevalence of DM was calculated. Associations between risk factors and DM were assessed using logistic regression modelling. RESULTS: Of 1,128 DM cases were identified among 194,563 cats (period prevalence 0.58%; 95% confidence interval [CI] 0.54–0.61). Multivariable modelling indicated that Tonkinese (OR 4.1; 95% CI 1.8–9.6; P = .001), Norwegian Forest (odds ratio [OR] 3.5; 95% CI 1.3–9.6; P = .001) and Burmese (OR 3.0; 95% CI 2.0–4.4; P < .001) cats had increased odds of DM compared with crossbred cats. DM odds increased as bodyweight categories increased above 4 kg (P < .001), as cats aged beyond 6 years old (P < .001) and in insured cats (OR 2.0; 95% CI 1.6–2.4; P < .001) but sex was not significantly associated with DM. CONCLUSIONS AND CLINICAL IMPORTANCE: Diabetes mellitus is an important component of the primary‐care practice caseload with 1‐in‐200 cats affected. An increased risk of DM in certain cat breeds supports a genetic predisposition. These results can guide future research and preventative healthcare
8x14Gb/s ring WDM modulator array with integrated tungsten heaters and Ge monitor photodetectors
An 8x14Gb/s wavelength-division multiplexed Si ring modulator array is presented with uniform channel performance. Tungsten heaters and Ge monitor photodetectors at the ring modulator drop ports are co-integrated to track and control the modulation quality
Lateral versus interdigitated diode design for 10 Gb/s low-voltage low-loss silicon ring modulators
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