5 research outputs found

    Piezoelectric mimicry of flexoelectricity

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    The origin of "giant" flexoelectricity, orders of magnitude larger than theoretically predicted, yet frequently observed, is under intense scrutiny. There is mounting evidence correlating giant flexoelectric-like effects with parasitic piezoelectricity, but it is not clear how piezoelectricity (polarization generated by strain) manages to imitate flexoelectricity (polarization generated by strain gradient) in typical beam-bending experiments, since in a bent beam the net strain is zero. In addition, and contrary to flexoelectricity, piezoelectricity changes sign under space inversion, and this criterion should be able to distinguish the two effects and yet "giant" flexoelectricity is insensitive to space inversion, seemingly contradicting a piezoelectric origin. Here we show that, if a piezoelectric material has its piezoelectric coefficient be asymmetrically distributed across the sample, it will generate a bending-induced polarization impossible to distinguish from true flexoelectricity even by inverting the sample. The effective flexoelectric coefficient caused by piezoelectricity is functionally identical to, and often larger than, intrinsic flexoelectricity: the calculations show that, for standard perovskite ferroelectrics, even a tiny gradient of piezoelectricity (1% variation of piezoelectric coefficient across 1 mm) is sufficient to yield a giant effective flexoelectric coefficient of 1 μ\muC/m, three orders of magnitude larger than the intrinsic expectation value

    Enhanced flexoelectric-like response in oxide semiconductors

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    Flexoelectricity is a property of all dielectric materials whereby they polarize in response to deformation gradients such as those produced by bending. Although it is generally thought of as a property of dielectric insulators, insulation is not a formal requirement: in principle, semiconductors can also redistribute their free charge in response to strain gradients. Here we show that bending a semiconductor not only generates a flexoelectric-like response, but that this response can in fact be much larger than in insulators. By doping single crystals of wide-bandgap oxides to increase their conductivity, their effective flexoelectric coefficient was increased by orders of magnitude. This large response can be explained by a barrier-layer mechanism that remains important even at the macroscale, where conventional (insulator) flexoelectricity otherwise tends to be small. Our results open up the possibility of using semiconductors as active ingredients in electromechanical transducer applications.This research was funded by an ERC Starting grant from the EU (ERC 308023) and by a national research grant (FIS2013-48668-C2-1-P) from the Spanish MINECO. All research in ICN2 is supported by the Severo Ochoa Excellence Programme (SEV-2013-0295). F.V.-S. thanks MICITT and CONICIT for support during his PhD.Peer Reviewe

    Effects of pre-operative isolation on postoperative pulmonary complications after elective surgery: an international prospective cohort study

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