Two Dimensional Quantum Mechanical Modeling of Nanotransistors

Quantization in the inversion layer and phase coherent transport are anticipated to have significant impact on device performance in 'ballistic' nanoscale transistors. While the role of some quantum effects have been analyzed qualitatively using simple one dimensional ballistic models, two dimensional (2D) quantum mechanical simulation is important for quantitative results. In this paper, we present a framework for 2D quantum mechanical simulation of a nanotransistor / Metal Oxide Field Effect Transistor (MOSFET). This framework consists of the non equilibrium Green's function equations solved self-consistently with Poisson's equation. Solution of this set of equations is computationally intensive. An efficient algorithm to calculate the quantum mechanical 2D electron density has been developed. The method presented is comprehensive in that treatment includes the three open boundary conditions, where the narrow channel region opens into physically broad source, drain and gate regions. Results are presented for (i) drain current versus drain and gate voltages, (ii) comparison to results from Medici, and (iii) gate tunneling current, using 2D potential profiles. Methods to reduce the gate leakage current are also discussed based on simulation results.Comment: 12 figures. Journal of Applied Physics (to appear

Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering-limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail.Comment: Review article, to appear in Journal of Computational and Theoretical Nanoscienc

Heating Effects in Nanoscale Devices

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ENERGY CONSUMPTION IN HOTEL INDUSTRY – CASE STUDY IN OHRID

Renewable energy is necessary for each industry functioning, also for hotel industry. It’s necessary for warming, lightening hotels, for kitchens functioning in hotels, for transport vehicles movement, for hotel pools, etc. In lack of classic energy sources, long period of time some work is done on finding new energy sources, besides oil and coal, water and wind. Nowadays, solar energy is very popular, which is already supplied, bio-energy, wind energy, water energy, geothermal and gas energy, steam, and still a work is done on permanent finding of new renewable energy sources (fuel cell resources, ocean/wave resources). In this paper, overworked data is shown, brought by Ohrid hotels and SWOT analyses has been done of energy consumption in hotel industry in Ohrid, with proposals for modernization, efficiency, aiming to modern tourism development, environment protection, human health protection. In this way, basic demands for entering the European Union will be satisfied and legislative harmonization in Republic of Macedonia with other EU members is going to be realized

2D Monte Carlo Simulation of Hole and Electron Transport in Strained Si

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