Tunable Fermi surface topology and Lifshitz transition in bilayer graphene

Bilayer graphene is a highly tunable material: not only can one tune the Fermi energy using standard gates, as in single-layer graphene, but the band structure can also be modified by external perturbations such as transverse electric fields or strain. We review the theoretical basics of the band structure of bilayer graphene and study the evolution of the band structure under the influence of these two external parameters. We highlight their key role concerning the ease to experimentally probe the presence of a Lifshitz transition, which consists in a change of Fermi contour topology as a function of energy close to the edges of the conduction and valence bands. Using a device geometry that allows the application of exceptionally high displacement fields, we then illustrate in detail the way to probe the topology changes experimentally using quantum Hall effect measurements in a gapped bilayer graphene system.Comment: To be published in Synthetic Metals, special issue "Advances in Graphene

Band gap and broken chirality in single-layer and bilayer graphene

Chirality is one of the key features governing the electronic properties of single- and bilayer graphene: the basics of this concept and its consequences on transport are presented in this review. By breaking the inversion symmetry, a band gap can be opened in the band structures of both systems at the K-point. This leads to interesting consequences for the pseudospin and, therefore, for the chirality. These consequences can be accessed by investigating the evolution of the Berry phase in such systems. Experimental observations of Fabry-Perot interference in a dual-gated bilayer graphene device are finally presented and are used to illustrate the role played by the band gap on the evolution of the pseudospin. The presented results can be attributed to the breaking of the chirality in the energy range close to the gap.Comment: To be published in Physica Status Solidi (RRL) - Rapid Research Letter

Anomalous sequence of quantum Hall liquids revealing tunable Lifshitz transition in bilayer graphene

Fermi surface topology plays an important role in determining the electronic properties of metals. In bulk metals, the Fermi energy is not easily tunable at the energy scale needed for reaching conditions for the Lifshitz transition - a singular point in the band structure where the connectivity of the Fermi surface changes. Bilayer graphene is a unique system where both Fermi energy and the low-energy electron dispersion can be tuned using the interplay between trigonal warping and a band gap opened by a transverse electric field. Here, we drive the Lifshitz transition to experimentally controllable carrier densities by applying large transverse electric fields through a h-BN-encapsulated bilayer graphene structure, and detect it by measuring the degeneracies of Landau levels. These degeneracies are revealed by filling factor -3 and -6 quantum Hall effect states of holes at low magnetic fields reflecting the existence of three maxima on the top of the valence band dispersion. At high magnetic fields all integer quantum Hall states are observed, indicating that deeper in the valence band the constant energy contours are singly-connected. The fact that we observe ferromagnetic quantum Hall states at odd-integer filling factors testifies to the high quality of our sample, and this enables us to identify several phase transitions between correlated quantum Hall states at intermediate magnetic fields, in agreement with the calculated evolution of the Landau level spectrum.Comment: 5 pages, 3 figure

Fabry-P\'erot interference in gapped bilayer graphene with broken anti-Klein tunneling

We report the experimental observation of Fabry-P\'erot (FP) interference in the conductance of a gate-defined cavity in a dual-gated bilayer graphene (BLG) device. The high quality of the BLG flake, combined with the device's electrical robustness provided by the encapsulation between two hexagonal boron nitride layers, allows us to observe ballistic phase-coherent transport through a $1${\mu}m-long cavity. We confirm the origin of the observed interference pattern by comparing to tight-binding calculations accounting for the gate-tunable bandgap. The good agreement between experiment and theory, free of tuning parameters, further verifies that a gap opens in our device. The gap is shown to destroy the perfect reflection for electrons traversing the barrier with normal incidence (anti-Klein tunneling). The broken anti-Klein tunneling implies that the Berry phase, which is found to vary with the gate voltages, is always involved in the FP oscillations regardless of the magnetic field, in sharp contrast with single-layer graphene.Comment: 5 pages, 4 figure

A tiered approach to the use of alternatives to animal testing for the safety assessment of cosmetics: Eye irritation

AbstractThe need for alternative approaches to replace the in vivo rabbit Draize eye test for evaluation of eye irritation of cosmetic ingredients has been recognised by the cosmetics industry for many years. Extensive research has lead to the development of several assays, some of which have undergone formal validation. Even though, to date, no single in vitro assay has been validated as a full replacement for the rabbit Draize eye test, organotypic assays are accepted for specific and limited regulatory purposes. Although not formally validated, several other in vitro models have been used for over a decade by the cosmetics industry as valuable tools in a weight of evidence approach for the safety assessment of ingredients and finished products. In light of the deadlines established in the EU Cosmetics Directive for cessation of animal testing for cosmetic ingredients, a COLIPA scientific meeting was held in Brussels on 30th January, 2008 to review the use of alternative approaches and to set up a decision-tree approach for their integration into tiered testing strategies for hazard and safety assessment of cosmetic ingredients and their use in products. Furthermore, recommendations are given on how remaining data gaps and research needs can be addressed

Oscillating Magnetoresistance in Graphene p–n Junctions at Intermediate Magnetic Fields

We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p-regions

Electronic triple-dot transport through a bilayer graphene island with ultrasmall constrictions

A quantum dot has been etched in bilayer graphene connected by two small constrictions to the leads. We show that this structure does not behave like a single quantum dot but consists of at least three sites of localized charge in series. The high symmetry and electrical stability of the device allowed us to triangulate the positions of the different sites of localized charge and find that one site is located in the island and one in each of the constrictions. Nevertheless we measure many consecutive non-overlapping Coulomb-diamonds in series. In order to describe these findings, we treat the system as a strongly coupled serial triple quantum dot. We find that the non-overlapping Coulomb diamonds arise due to higher order cotunneling through the outer dots located in the constrictions. We extract all relevant capacitances, simulate the measured data with a capacitance model and discuss its implications on electrical transport.ISSN:1367-263

Graphene nano-heterostructures for quantum devices

Ten years ago, the exfoliation of graphene started the field of layered two-dimensional materials. Today, there is a huge variety of two-dimensional materials available for both research and applications. The different dimensionality compared to their bulk relatives is responsible for a wealth of novel properties of these layered two-dimensional materials. The true strength of two-dimensional materials is however the possibility to stack different layers on top of each other to engineer new heterostructures with specifically tailored properties. Known as van-der-Waals heterostructures, they enable the experimental observation of a variety of new phenomena. By patterning the individual layers laterally into nanostructures, additional functionality can be added to the devices. This review provides a glimpse at the future opportunities offered by van-der-Waals stacked nanodevices.ISSN:1369-702