Metric Regularity of the Sum of Multifunctions and Applications

In this work, we use the theory of error bounds to study metric regularity of the sum of two multifunctions, as well as some important properties of variational systems. We use an approach based on the metric regularity of epigraphical multifunctions. Our results subsume some recent results by Durea and Strugariu.Comment: Submitted to JOTA 37 page

(26.55 %, or 23.69 %)-Limiting Highest Efficiencies, obtained respectively in nn+(pp+) − pp(nn) Crystalline (XX ≡ CdTe, or CdSe)- Junction Solar Cells, Due to the Effects of Impurity Size, Temperature, Heavy Doping, and Photovoltaic Conversion

 In the n+(p+)−p(n) crystalline (X≡ CdTe or CdSe)-junction solar cells at 300K, due to the effects of impurity size, temperature, heavy doping, and photovoltaic conversion, we show that, with an increasing donor (acceptor)-radius rd(a), both the relative dielectric constant and photovoltaic conversion factor decrease, and the intrinsic band gap (IBG) increases, according to the increase in photovoltaic efficiency, as observed in Tables 1-5, being in good accordance with an important result obtained by Shockley and Queisser (1961), stating that for an increasing IBG the photovoltaic efficiency increases. Further, for highest values of rd(a), the limiting highest efficiencies are found to be given in Tables 4, 6, as: 26.55 %, and 23.69 %, obtained in such n+(p+)−p(n) crystalline (CdTe, or CdSe)-junction solar cells at the open circuit voltage Voc=0.82 V, and 0.89 V, respectively, and at T=300 K. Furthermore, from the well-known Carnot-efficiency theorem, as given in Eq. (46), being obtained from the second principle of the thermodynamics, and from the above results of limiting highest efficiencies, the corresponding highest hot reservoir temperatures, TH=408.4 K, and 393.1 K, respectively. Thus, as noted above, ηmax. and TH both increase with an increasing IBG, for each (X≡ CdTe, or CdSe)- crystal at T=300 K≡TC.&nbsp

Critical Impurity Density in the Mott Metal-Insulator Transition, obtained in the n(p)-Type Degenerate

By basing on the same physical model and treatment method, as used in our recent works (Van Cong, 2024; 2023; 2023), we investigate the critical impurity density in the metal-insulator transition (MIT), obtained in the n(p)-type degenerate Si1−xGex- crystalline alloy, 0≤x≤1, and also applied to determine the optical band gap, being due to the effects of the size of donor (acceptor) d(a)-radius, rd(a), the x-Ge concentration, the temperature T, and finally the high d(a)-density, N, assuming that all the impurities are ionized even at T=0 K. In such the n(p)-type degenerate Si1−xGex- crystalline alloy, we will determine:  (i)-the critical impurity density &nbsp

11.97% (12.12%)-Limiting Highest Efficiencies Obtained Respectively in nn+(pp+) − pp(nn) Crystalline GaSb Junction Solar Cells at T=300K, Due to the Effects of Impurity Size, Temperature, Heavy Doping, and Photovoltaic Conversion

In the n+(p+)−p(n) crystalline GaSb-junction solar cells at 300K, due to the effects of impurity size, temperature, heavy doping, and photovoltaic conversion, we show that, with an increasing donor (acceptor)-radius rd(a), both the relative dielectric constant and photovoltaic conversion factor decrease, and the intrinsic band gap increases, according to the increase in photovoltaic efficiency, as observed in Tables 1, 2 and 3, being in good accordance with an important result obtained by Shockley and Queisser (1961), with the use of the second law of thermodynamics, stating that for an increasing intrinsic band gap the photovoltaic efficiency increases. Further, for highest values of rd(a), the limiting highest efficiencies are found to be given in Tables 2 and 3, as: 11.97 % (12.12 %), obtained in such n+(p+)−p(n) crystalline GaSb-junction solar cells at 300 K, respectively.&nbsp

Maximal Efficiencies in New Single Si 1-x Ge x- Alloy Junction Solar Cells at 300 K

In single n+(p+)−p(n) [X(x)≡Si1−xGex]-alloy junction solar cells at 300 K, 0≤x≤1, by basing on the same physical model and the same treatment method, as those used in our recent work (Van Cong et al., 2023; Van Cong, 2023), we will investigate the highest (or maximal) efficiencies, ηImax.(IImax.), obtained at the open circuit voltage Voc(=VocI(ocII)), according to highest hot reservoir temperatures TH(K), obtained from the Carnot efficiency theorem, being proved by entropy law, in the following. (i)-First, in the singl