Oscillatory dynamics of a superconductor vortex lattice in high amplitude ac magnetic fields

In this work we study by ac susceptibility measurements the evolution of the solid vortex lattice mobility under oscillating forces. Previous work had already shown that in YBCO single crystals, below the melting transition, a temporarily symmetric magnetic ac field (e.g. sinusoidal, square, triangular) can heal the vortex lattice (VL) and increase its mobility, but a temporarily asymmetric one (e.g. sawtooth) of the same amplitude can tear the lattice into a more pinned disordered state. In this work we present evidence that the mobility of the VL is reduced for large vortex displacements, in agreement with predictions of recent simulations. We show that with large symmetric oscillating fields both an initially ordered or an initially disordered VL configuration evolve towards a less mobile lattice, supporting the scenario of plastic flow.Comment: 5 pages, 4 figures. To appear in Phys. Rev.

Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers

We demonstrate a large enhancement of the spin accumulation in monolayer graphene following electron-beam induced deposition of an amorphous carbon layer at the ferromagnet-graphene interface. The enhancement is 10^4-fold when graphene is deposited onto poly(methyl metacrylate) (PMMA) and exposed with sufficient electron-beam dose to cross-link the PMMA, and 10^3-fold when graphene is deposited directly onto SiO2 and exposed with identical dose. We attribute the difference to a more efficient carbon deposition in the former case due to an increase in the presence of compounds containing carbon, which are released by the PMMA. The amorphous carbon interface can sustain very large current densities without degrading, which leads to very large spin accumulations exceeding 500 microeVs at room temperature

Fingerprints of Inelastic Transport at the Surface of the Topological Insulator Bi2Se3: Role of Electron-Phonon Coupling

We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the crystal resistivity is strongly temperature dependent, reflecting inelastic scattering due to the thermal activation of optical phonons. A linear increase of the current with voltage is obtained up to a threshold value at which current saturation takes place. We show that the activated behavior, the voltage threshold and the saturation current can all be quantitatively explained by considering a single optical phonon mode with energy $\hbar \Omega \approx 8$ meV. This phonon mode strongly interacts with the surface states of the material and represents the dominant source of scattering at the surface at high electric fields.Comment: Supplementary Material at: http://journals.aps.org/prl/supplemental/10.1103/PhysRevLett.112.086601/TIPhonon_SM.pd

Direct electronic measurement of the spin Hall effect

The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling, which couples the spin of an electron to its momentum, is attracting considerable interest. In a spin-orbit-coupled system, a nonzero spin-current is predicted in a direction perpendicular to the applied electric field, giving rise to a "spin Hall effect"[2-4]. Consistent with this effect, electrically-induced spin polarization was recently detected by optical techniques at the edges of a semiconductor channel[5] and in two-dimensional electron gases in semiconductor heterostructures[6,7]. Here we report electrical measurements of the spin-Hall effect in a diffusive metallic conductor, using a ferromagnetic electrode in combination with a tunnel barrier to inject a spin-polarized current. In our devices, we observe an induced voltage that results exclusively from the conversion of the injected spin current into charge imbalance through the spin Hall effect. Such a voltage is proportional to the component of the injected spins that is perpendicular to the plane defined by the spin current direction and the voltage probes. These experiments reveal opportunities for efficient spin detection without the need for magnetic materials, which could lead to useful spintronics devices that integrate information processing and data storage.Comment: 5 pages, 4 figures. Accepted for publication in Nature (pending format approval

Spin communication over 30 μ\mum long channels of chemical vapor deposited graphene on SiO2_2

We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 $\mu$m in platinum-based chemical vapor deposition (Pt-CVD) synthesized single-layer graphene on SiO$_2$/Si substrates. The spin-lifetime systematically presents a marked minimum at the charge neutrality point, as typically observed in pristine exfoliated graphene. However, by studying the carrier density dependence beyond n ~ 5 x 10$^{12}$ cm$^{-2}$, via electrostatic gating, it is found that the spin lifetime reaches a maximum and then starts decreasing, a behavior that is reminiscent of that predicted when the spin-relaxation is driven by spin-orbit interaction. The spin lifetimes and relaxation lengths compare well with state-of-the-art results using exfoliated graphene on SiO$_2$/Si, being a factor two-to-three larger than the best values reported at room temperature using the same substrate. As a result, the spin signal can be readily measured across 30 $\mu$m long graphene channels. These observations indicate that Pt-CVD graphene is a promising material for large-scale spin-based logic-in-memory applications

On the Structure of Dark Matter Halos at the Damping Scale of the Power Spectrum with and without Relict Velocities

We report a series of high-resolution cosmological N-body simulations designed to explore the formation and properties of dark matter halos with masses close to the damping scale of the primordial power spectrum of density fluctuations. We further investigate the effect that the addition of a random component, v_rms, into the particle velocity field has on the structure of halos. We adopted as a fiducial model the Lambda Warm Dark Matter cosmology with a non-thermal sterile neutrino mass of 0.5 keV. The filtering mass corresponds then to M_f = 2.6x10^12 M_sun/h. Halos of masses close to M_f were simulated with several million of particles. The results show that, on one hand, the inner density slope of these halos (at radii <~0.02 the virial radius Rvir) is systematically steeper than the one corresponding to the NFW fit or to the CDM counterpart. On the other hand, the overall density profile (radii larger than 0.02Rvir) is less curved and less concentrated than the NFW fit, with an outer slope shallower than -3. For simulations with v_rms, the inner halo density profiles flatten significantly at radii smaller than 2-3 kpc/h (<~0.010-0.015Rvir). A constant density core is not detected in our simulations, with the exception of one halo for which the flat core radius is ~1 kpc/h. Nevertheless, if ``cored'' density profiles are used to fit the halo profiles, the inferred core radii are ~0.1-0.8 kpc/h, in rough agreement with theoretical predictions based on phase-space constrains, and on dynamical models of warm gravitational collapse. A reduction of v_rms by a factor of 3 produces a modest decrease in core radii, less than a factor of 1.5. We discuss the extension of our results into several contexts, for example, to the structure of the cold DM micro-halos at the damping scale of this model.Comment: 13 pages, 6 figures, accepted for publication in The Astrophysical Journa

Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large resistivity of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.Comment: 14 pages, 6 figures. Accepted in 2D Materials. https://doi.org/10.1088/2053-1583/aa882