Using the Scale Software for Critical Analysis

This article shows the experience of using the SCALE software package (hereinafter SCALE) to analyze the criticality of critical benchmark experiments. This experience was obtained during the familiarization of SCALE for research purposes on the basis of the Department of Nuclear Physics and Technologies (DNPaT) of the IATE MEPhI. Test calculations of the effective multiplication factor ( ) critical assemblies with different parameters was produced, research different method of calculate multigroup constants

Ion beam system for nanotrimming of functional microelectronics layers

This paper concerns with investigation of the trimming process which uses ion beam etching for high-precision adjustment of the thickness of functional microelectronics layers. The layer deposited on the substrate is etched by scanning focused ion beam; its position and power is regulated according to the topography of layer non-uniformity. The trimming allows to create pre-defined topography of the non-uniformity with accuracy down to 4 Å and decrease the roughness of the surface.Досліджено процес коригувального іонно-променевого травлення для регулювання з високою точністю товщини функціональних шарів мікроелектроніки. Функціональний шар на підкладці витравлюється скануючим сфокусованим іонним пучком, локалізація та потужність якого відповідають топографії неоднорідності товщини функціонального шару. Показана можливість регулювання розподілу товщини плівок по поверхні підкладок до +/-4 Å та зменшення шорсткості поверхні.Исследован процесс корректирующего ионно-лучевого травления для регулировки с высокой точностью толщины функциональных слоев микроэлектроники. Функциональный слой на подложке травится сканирующим сфокусированным ионным пучком, локализация и мощность которого соответствуют топографии неоднородности толщины функционального слоя. Показана возможность регулировки распределения толщины пленок по поверхности подложек до +/-4 Å и уменьшения шероховатости поверхности

A blueprint for the synthesis and characterization of thiolated graphene

Graphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community. In this paper, we propose a facile and scalable method for the synthesis of thiolated graphene via a two step liquid phase treatment of graphene oxide GO . Employing the core level methods, the introduction of up to 5.1 at. of thiols is indicated with the simultaneous rise of the C O ratio to 16.8. The crumpling of the graphene layer upon thiolation without its perforation is pointed out by microscopic and Raman studies. The conductance of thiolated graphene is revealed to be driven by the Mott hopping mechanism with the sheet resistance values of 2.15 k amp; 937; sq and dependable on the environment. The preliminary results on the chemiresistive effect of these films upon exposure to ethanol vapors in the mix with dry and humid air are shown. Finally, the work function value and valence band structure of thiolated graphene are analyzed. Taken together, the developed method and findings of the morphology and physics of the thiolated graphene guide the further application of this derivative in energy storage, sensing devices, and smart material

Saturation of the magnetosphere during superstorms: new results from the magnetogram inversion technique

Using data on three superstorms, we study new features of the saturation of the polar cap area when the solar wind (SW) increases. The polar cap saturation is shown to occur when the SW dynamic pressure and southward vertical (IMF) component rise. The saturation is realized not only during the passage of interplanetary magnetic clouds, but also at significant enhancement of SW density when the SW thermal pressure is comparable with the pressure of the interplanetary magnetic field. We assume that under such conditions the saturation is caused not only by a decrease in the efficiency of reconnection at the dayside magnetopause, but mainly by finite magnetosphere compressibility — stopping the magnetopause compression due to a rapid earthward growth of the geomagnetic field, i.e. the inner magnetospheric structure of the geomagnetic field. We have found signs of saturation depending on the northward IMF component. We assume that the IMF-dependent saturation exists for both signs of its vertical component due to an increase in the total pressure in the magnetosheath. Moreover, when penetrating into the magnetosphere, the southward IMF component reduces the geomagnetic field and thereby causes additional compression of the magnetopause and, accordingly, an increase in the saturation level of the polar cap area