Current-in-plane magnetoresistance : a new approach to boundary conditions

We have rigorously calculated all the possible two-body rate constants associated with population dynamics of the hyperfine levels of atomic hydrogen as a function of magnetic field at T=0 K. These results are important in view of the recently suggested use of magnetic traps to obtain Bose-Einstein condensation

Influence of disorder on the ferromagnetism in diluted magnetic semiconductors

Influence of disorder on the ferromagnetic phase transition in diluted (III,Mn)V semiconductors is investigated analytically. The regime of small disorder is addressed, and the enhancement of the critical temperature by disorder is found both in the mean field approximation and from the analysis of the zero temperature spin stiffness. Due to disorder, the spin wave fluctuations around the ferromagnetically ordered state acquire a finite mass. At large charge carrier band width, the spin wave mass squared becomes negative, signaling the breakdown of the ferromagnetic ground state and the onset of a noncollinear magnetic order.Comment: Replaced with revised version. 10 pages, 3 figure

Optical Conductivity of Ferromagnetic Semiconductors

The dynamical mean field method is used to calculate the frequency and temperature dependent conductivity of dilute magnetic semiconductors. Characteristic qualitative features are found distinguishing weak, intermediate, and strong carrier-spin coupling and allowing quantitative determination of important parameters defining the underlying ferromagnetic mechanism

Photoemission studies of Ga1−x_{1-x}Mnx_{x}As: Mn-concentration dependent properties

Using angle-resolved photoemission, we have investigated the development of the electronic structure and the Fermi level pinnning in Ga$_{1-x}$Mn$_{x}$As with Mn concentrations in the range 1--6%. We find that the Mn-induced changes in the valence-band spectra depend strongly on the Mn concentration, suggesting that the interaction between the Mn ions is more complex than assumed in earlier studies. The relative position of the Fermi level is also found to be concentration-dependent. In particular we find that for concentrations around 3.5--5% it is located very close to the valence-band maximum, which is in the range where metallic conductivity has been reported in earlier studies. For concentration outside this range, larger as well as smaller, the Fermi level is found to be pinned at about 0.15 eV higher energy.Comment: REVTeX style; 7 pages, 3 figure

A search for ferromagnetism in transition-metal-doped piezoelectric ZnO

We present the results of a computational study of ZnO in the presence of Co and Mn substitutional impurities. The goal of our work is to identify potential ferromagnetic ground states within the (Zn,Co)O or (Zn,Mn)O material systems that are also good candidates for piezoelectricity. We find that, in contrast to previous results, robust ferromagnetism is not obtained by substitution of Co or Mn on the Zn site, unless additional carriers (holes) are also incorporated. We propose a practical scheme for achieving such $p$-type doping in ZnO

Twisted exchange interaction between localized spins embedded in a one- or two-dimensional electron gas with Rashba spin-orbit coupling

We study theoretically the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in one- and two-dimensions in presence of a Rashba spin-orbit (SO) coupling. We show that rotation of the spin of conduction electrons due to SO coupling causes a twisted RKKY interaction between localized spins which consists of three different terms: Heisenberg, Dzyaloshinsky-Moriya, and Ising interactions. We also show that the effective spin Hamiltonian reduces to the usual RKKY interaction Hamiltonian in the twisted spin space where the spin quantization axis of one localized spin is rotated.Comment: 4pages, no figur

Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

We report on progress in growth and applications of submonolayer (SML) quantum dots (QDs) in high-speed vertical-cavity surface-emitting lasers (VCSELs). SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs) is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission

Formation of ITB in the vicinity of rational surfaces in the Uragan-3M torsatron

It was shown that there is the possibility of ITB formation in the vicinity of rational surfaces in a torsatron magnetic configuration. The formation of ITB is accompanied by fast change of plasma poloidal rotation velocity, radial electric field and its shear and the decrease of plasma density fluctuations. After the ITB formation the transition to the improved plasma confinement takes place. The transition stars when electron temperature in the region of rational surfaces is sufficient to satisfy the condition υTe/uei>>2πR0 (here υTe is electron thermal velocity and uei is the frequency of ion – electron collisions, and R0 is the major radius of the torus). Such a regime can be maintained during the whole duration of RF discharge without any disturbances.Показано, що існує можливість формування внутрішнього теплового бар’єру (ВТБ) в плазмі ВЧ розряду в околиці раціональних поверхонь в торсатронній магнітній конфігурації. Формування ВТБ супроводжується бистрими змінами швидкості полоідального обертання плазми, радіального електричного поля и його шира і зменшенням флуктуацій густини плазми поблизу раціональних поверхонь. Після формування ВТБ спостерігається перехід в режим поліпшеного утримання плазми. Час переходу зменшується із збільшенням ВЧ потужності нагріву.Показано, что имеется возможность формирования внутреннего теплового барьера (ВТБ) в плазме ВЧ разряда в окрестности рациональных поверхностей в торсатронной магнитной конфигурации. Формирование ВТБ сопровождается быстрыми изменениями скорости полоидального вращения плазмы, радиального электрического поля и его шира и уменьшением флуктуаций плотности плазмы вблизи рациональных поверхностей. После формирования ВТБ наблюдается переход в режим улучшенного удержания плазмы. Время перехода сокращается с увеличением ВЧ мощности нагрева

Microstructural effects in steel under the action of the quasispherically converging shock wave

Nous avons étudié les changements structuraux provoqués dans des billes d'acier de 40 et 60 mm de diamètre, par l'explosion de charges sphériques ayant respectivement 20 et 10 mm d'épaisseur. L'explosion a été initiée en 12 points situés de manière régulière sur la surface externe de la charge. La charge explosive était confinée par une lourde enveloppe afin de préserver 1'échantillon. Dans la bille de 60 mm de diamètre, les changements structuraux sont principalement liés aux interactions des ondes de choc et aux phénomènes de déformations provoqués par ces dernières. Dans la bille de 40 mm de diamètre, l'intensité de l'onde de choc convergente est notablement plus élevée, ce qui fait que l'élévation de température joue un rôle important (fusion et cristallisation ultérieure, formation de phase gamma).Investigations were made into structural changes in steel and brass balls with diameters of 40 and 60 mm arising from the influence of the explosion of spherical charges with thickness of 20 and 10 mm, respectively. The explosion was initiated at 12 points uniformly located on the external surface of the charge, which was surrounded by heavy casing to preserve the samples. In a ball sample 60 mm in diameter structural changes were conditioned mainly by shock wave interactions and the resulting deformation. In a sample 40 mm in diameter, where convergent shock wave intensity is notably higher, temperature increase plays an important role, resulting in melting and subsequent crystallization and phase information