1,075 research outputs found
Elastic Mid-Infrared Light Scattering: a Basis for Microscopy of Large-Scale Electrically Active Defects in Semiconducting Materials
A method of the mid-IR-laser microscopy has been proposed for the
investigation of the large-scale electrically and recombination active defects
in semiconductors and non-destructive inspection of semiconductor materials and
structures in the industries of microelectronics and photovoltaics. The basis
for this development was laid with a wide cycle of the investigations on the
low-angle mid-IR-light scattering in semiconductors. The essence of the
technical idea was to apply the dark-field method for spatial filtering of the
scattered light in the scanning mid-IR-laser microscope. This approach enabled
the visualization of large-scale electrically active defects which are the
regions enriched with ionized electrically active centers. The photoexcitation
of excess carriers within a small volume located in the probe mid-IR-laser beam
enabled the visualization of the large-scale recombination-active defects like
those revealed in the optical or electron beam induced current methods. Both
these methods of the scanning mid-IR-laser microscopy are now introduced in
detail in the present paper as well as a summary of techniques used in the
standard method of the lowangle mid-IR-light scattering itself. Besides the
techniques for direct observations, methods for analyses of the defect
composition associated with the mid-IR-laser microscopy are also discussed in
the paper.Comment: 44 pages, 13 figures. A good oldi
Adatom incorporation and step crossing at the edges of 2D nanoislands
Adatom incorporation into the ``faceted'' steps bordering the 2D nanoislands
is analyzed. The step permeability and incorporation coefficients are derived
for some typical growth situations. It is shown that the step consisting of
equivalent straight segments can be permeable even in the case of fast egde
migration if there exist factors delaying creation of new kinks. The step
consisting of alternating rough and straight segments may be permeable if there
is no adatom transport between neighboring segments through the corner
diffusion.Comment: 3 pages, one figur
Endothelotropic activity of 4-hydroxy-3,5-di-tret-butylcinnamic acid in the conditions of experimental cerebral ischemia
The aim of the study was to evaluate the endothelioprotective activity of 4-hydroxy-3,5-di-tret-butylcinnamic acid in conditions of experimental cerebral ischemia. The brain ischemia was reproduced by the method of irreversible right-sided thermocoagulation of the middle cerebral artery. As comparative drugs, mexidol (30 mg/kg) and sulodexide (30 U/kg) were use
Maser action in methanol transitions
We report the detection with the ATCA of 6.7 GHz methanol emission towards
OMC-1. The source has a size between 40'' and 90'', is located to the
south-east of Ori-KL and may coincide in position with the 25 GHz masers. The
source may be an example of an interesting case recently predicted in theory
where the transitions of traditionally different methanol maser classes show
maser activity simultaneously. In addition, results of recent search for
methanol masers from the 25 and 104.3 GHz transitions are reported.Comment: To appear in the Proceedings of the 2004 European Workshop: "Dense
Molecular Gas around Protostars and in Galactic Nuclei", Eds. Y.Hagiwara,
W.A.Baan, H.J. van Langevelde, 2004, a special issue of ApSS, Kluwer; author
list has been corrected, text is unchange
Analysis of functional condition of cardiorespiratory system of qualified and entrant weight lifters
This article provides data of the analysis of functional condition of cardio respiratory system of qualified and entrant weight lifter
Fast and Slow Stages of Lifetime Degradation by Boron–Oxygen Centers in Crystalline Silicon
A conflict between previous and recently published data on the two-stage light-induced degradation (LID) of carrier lifetime in boron-doped oxygen-containing crystalline silicon is addressed. The previous experiments showed the activation of two boron–oxygen recombination centers with strongly differing recombination properties for the fast and slow stages of LID, whereas more recent studies found only a single center for both stages. To resolve this controversy, the historic silicon samples of these previous examinations are re-examined in this study after more than one decade. It is found that, in the historic samples, the fast stage can be either described by two different centers or a mixture of the two, depending on the duration of previous dark annealing. A possible solution is suggested based on the involvement of different activating impurities in the boron–oxygen defect. In dark-annealed samples, the defect consisting of boron, oxygen, and the activation impurity is present in two latent configurations, which reconfigure during LID at a fast and a slow stage. In the examined historic silicon samples, which did not undergo a gettering pretreatment, a significant concentration of an additional boron–oxygen defect with a different kind of activating impurity attached exists. The historic and modern results are thus reconciled
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