Investigation of Fouling in Plate Heat Exchangers at Sugar Factory

The fouling formation in heat transfer equipment is the complex process, which is determined by the physical properties of the heat carrier, material of the unit and hydraulic characteristics of the flow. The mathematical model based on the asymptotic behaviour of water fouling is examined. The fouling process supposes the net rate of fouling accumulation as the difference between the fouling deposition rate and the fouling removal rate. The relation for predicting the fouling resistance dynamics during the time is proposed. The investigation of precipitation and particulate deposition in purified juice heating PHE for the first stage evaporation, which operates in sugar plant, was examined. In this position М15М plate heat exchanger produced by Alfa Laval is used. The analysis and mathematical simulation of the experimental data are presented. For the juice heaters the content of fouling deposition is mostly the calcium salts as calcium carbonates and sulphates. The parameters of the equation for deposition term estimation were determined for the regarded heat carrier. It allows to determine the deposition term and to simulate the fouling formation in time. The comparison of the experimental data and mathematical calculations showed a good agreement. The proposed mathematical model enables to predict the fouling formation behaviour in PHE as purified juice heater and to determine the operation term for the cleaning of this unit. Basing on the observed model, the software, which enables to determine the periods of PHE cleaning during the operation was developed. The comparison of the industrial measurement data with calculation results is presented

Two-scale localization in disordered wires in a magnetic field

Calculating the density-density correlation function for disordered wires, we study localization properties of wave functions in a magnetic field. The supersymmetry technique combined with the transfer matrix method is used. It is demonstrated that at arbitrarily weak magnetic field the far tail of the wave functions decays with the length $L_{{\rm cu}}=2L_{{\rm co}}$, where $L_{{\rm co}}$ and $L_{{\rm cu}}$ are the localization lengths in the absence of a magnetic field and in a strong magnetic field, respectively. At shorter distances, the decay of the wave functions is characterized by the length $L_{{\rm co}}$. Increasing the magnetic field broadens the region of the decay with the length $L_{{\rm cu}}$, leading finally to the decay with $L_{{\rm cu}}$ at all distances. In other words, the crossover between the orthogonal and unitary ensembles in disordered wires is characterized by two localization lengths. This peculiar behavior must result in two different temperature regimes in the hopping conductivity with the boundary between them depending on the magnetic field.Comment: 4 page

Symmetry Dependence of Localization in Quasi- 1- dimensional Disordered Wires

The crossover in energy level statistics of a quasi-1-dimensional disordered wire as a function of its length L is used, in order to derive its averaged localization length, without magnetic field, in a magnetic field and for moderate spin orbit scattering strength. An analytical function of the magnetic field for the local level spacing is obtained, and found to be in excellent agreement with the magnetic field dependent activation energy, recently measured in low-mobility quasi-one-dimensional wires\cite{khavin}. This formula can be used to extract directly and accurately the localization length from magnetoresistance experiments. In general, the local level spacing is shown to be proportional to the excitation gap of a virtual particle, moving on a compact symmetric space.Comment: 4 pages, 2 Eqs. added, Eperimental Data included in Fig.

Strong localization of electrons in quasi-one-dimensional conductors

We report on the experimental study of electron transport in sub-micron-wide ''wires'' fabricated from Si $\delta$-doped GaAs. These quasi-one-dimensional (Q1D) conductors demonstrate the crossover from weak to strong localization with decreasing the temperature. On the insulating side of the crossover, the resistance has been measured as a function of temperature, magnetic field, and applied voltage for different values of the electron concentration, which was varied by applying the gate voltage. The activation temperature dependence of the resistance has been observed with the activation energy close to the mean energy spacing of electron states within the localization domain. The study of non-linearity of the current-voltage characteristics provides information on the distance between the critical hops which govern the resistance of Q1D conductors in the strong localization (SL) regime. We observe the exponentially strong negative magnetoresistance; this orbital magnetoresistance is due to the universal magnetic-field dependence of the localization length in Q1D conductors. The method of measuring of the single-particle density of states (DoS) in the SL regime has been suggested. Our data indicate that there is a minimum of DoS at the Fermi level due to the long-range Coulomb interaction.Comment: 12 pages, 11 figures; the final version to appear in Phys. Rev.

Electron-Assisted Hopping in Two Dimensions

We have studied the non-ohmic effects in the conductivity of a two-dimensional system which undergoes the crossover from weak to strong localization with decreasing electron concentration. When the electrons are removed from equilibrium with phonons, the hopping conductivity depends only on the electron temperature. This indicates that the hopping transport in a system with a large localization length is assisted by electron-electron interactions rather than by the phonons.Comment: 5 pages, 4 figure

Characterization of one-dimensional quantum channels in InAs/AlSb

We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofabrication scheme that utilizes a 3nm-shallow wet chemical etching to define the electrostatic lateral confinement, the system is found to possess three important properties: specular boundary scattering, a strong lateral confinement potential, and a conducting channel width that is approximately the lithography width. Ballistic transport phenomena, including the quenching of the Hall resistance, the last Hall plateau, and a strong negative bend resistance, are observed at 4K in cross junctions with sharp corners. In a ring geometry, we have observed Aharonov-Bohm interference that exhibits characteristics different from those of the GaAs counterpart due to the ballistic nature of electron transport and the narrowness of the conducting channel width.Comment: pdf-file, 8 figures, to be published in Phys. Rev.

Interaction effects and phase relaxation in disordered systems

This paper is intended to demonstrate that there is no need to revise the existing theory of the transport properties of disordered conductors in the so-called weak localization regime. In particular, we demonstrate explicitly that recent attempts to justify theoretically that the dephasing rate (extracted from the magnetoresistance) remains finite at zero temperature are based on the profoundly incorrect calculation. This demonstration is based on a straightforward evaluation of the effect of the electron-electron interaction on the weak localization correction to the conductivity of disordered metals. Using well-controlled perturbation theory with the inverse conductance $g$ as the small parameter, we show that this effect consists of two contributions. First contribution comes from the processes with energy transfer smaller than the temperature. This contribution is responsible for setting the energy scale for the magnetoresistance. The second contribution originates from the virtual processes with energy transfer larger than the temperature. It is shown that the latter processes have nothing to do with the dephasing, but rather manifest the second order (in $1/g$) correction to the conductance. This correction is calculated for the first time. The paper also contains a brief review of the existing experiments on the dephasing of electrons in disordered conductors and an extended qualitative discussion of the quantum corrections to the conductivity and to the density of electronic states in the weak localization regime.Comment: 34 pages, 13 .eps figure

Non-linear effects and dephasing in disordered electron systems

The calculation of the dephasing time in electron systems is presented. By means of the Keldysh formalism we discuss in a unifying way both weak localization and interaction effects in disordered systems. This allows us to show how dephasing arises both in the particle-particle channel (weak localization) and in the particle-hole channel (interaction effect). First we discuss dephasing by an external field. Besides reviewing previous work on how an external oscillating field suppresses the weak localization correction, we derive a new expression for the effect of a field on the interaction correction. We find that the latter may be suppressed by a static electric field, in contrast to weak localization. We then consider dephasing due to inelastic scattering. The ambiguities involved in the definition of the dephasing time are clarified by directly comparing the diagrammatic approach with the path-integral approach. We show that different dephasing times appear in the particle-particle and particle-hole channels. Finally we comment on recent experiments.Comment: 28 pages, 6 figures (14ps-files

Electronic Transport in a Three-dimensional Network of 1-D Bismuth Quantum Wires

The resistance R of a high density network of 6 nm diameter Bi wires in porous Vycor glass is studied in order to observe its expected semiconductor behavior. R increases from 300 K down to 0.3 K. Below 4 K, where R varies approximately as ln(1/T), the order-of-magnitude of the resistance rise, as well as the behavior of the magnetoresistance are consistent with localization and electron-electron interaction theories of a one-dimensional disordered conductor in the presence of strong spin-orbit scattering. We show that this behaviour and the surface-enhanced carrier density may mask the proposed semimetal-to-semiconductor transition for quantum Bi wires.Comment: 19 pages total, 4 figures; accepted for publication in Phys. Rev.

Magnetolocalization in disordered quantum wires

The magnetic field dependent localization in a disordered quantum wire is considered nonperturbatively. An increase of an averaged localization length with the magnetic field is found, saturating at twice its value without magnetic field. The crossover behavior is shown to be governed both in the weak and strong localization regime by the magnetic diffusion length L_B. This function is derived analytically in closed form as a function of the ratio of the mean free path l, the wire thickness W, and the magnetic length l_B for a two-dimensional wire with specular boundary conditions, as well as for a parabolic wire. The applicability of the analytical formulas to resistance measurements in the strong localization regime is discussed. A comparison with recent experimental results on magnetolocalization is included.Comment: 22 pages, RevTe