84 research outputs found
Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by Infrared Spectroscopic Ellipsometry
Infrared spectroscopic ellipsometry is applied to investigate the free-charge
carrier properties of Mg-doped InN films. Two representative sets of In-polar
InN grown by molecular beam epitaxy with Mg concentrations ranging from
cm to cm are compared. P-type
conductivity is indicated for the Mg concentration range of
cm to cm from a systematic investigation of the
longitudinal optical phonon plasmon broadening and the mobility parameter in
dependence of the Mg concentration. A parameterized model that accounts for the
phonon-plasmon coupling is applied to determine the free-charge carrier
concentration and mobility parameters in the doped bulk InN layer as well as
the GaN template and undoped InN buffer layer for each sample. The free-charge
carrier properties in the second sample set are consistent with the results
determined in a comprehensive analysis of the first sample set reported earlier
[Sch\"oche et al., J. Appl. Phys. 113, 013502 (2013)]. In the second set, two
samples with Mg concentration of cm are identified as
compensated n-type InN with very low electron concentrations which are suitable
for further investigation of intrinsic material properties that are typically
governed by high electron concentrations even in undoped InN. The compensated
n-type InN samples can be clearly distinguished from the p-type conductive
material of similar plasma frequencies by strongly reduced phonon plasmon
broadening
Electron effective mass in AlGaN alloys determined by mid-infrared optical Hall effect
The effective electron mass parameter in Si-doped AlGaN is
determined to be from mid-infrared optical Hall
effect measurements. No significant anisotropy of the effective electron mass
parameter is found supporting theoretical predictions. Assuming a linear change
of the effective electron mass with the Al content in AlGaN alloys and
for GaN, an average effective electron mass of
can be extrapolated for AlN. The analysis of mid-infrared
spectroscopic ellipsometry measurements further confirms the two phonon mode
behavior of the E(TO) and one phonon mode behavior of the A(LO) phonon
mode in high-Al-content AlGaN alloys as seen in previous Raman scattering
studies
Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies
The effect of a tunable, externally coupled Fabry-P\'{e}rot cavity to
resonantly enhance the optical Hall effect signatures at terahertz frequencies
produced by a traditional Drude-like two-dimensional electron gas is shown and
discussed in this communication. As a result, the detection of optical Hall
effect signatures at conveniently obtainable magnetic fields, for example by
neodymium permanent magnets, is demonstrated. An AlInN/GaN-based high electron
mobility transistor structure grown on a sapphire substrate is used for the
experiment. The optical Hall effect signatures and their dispersions, which are
governed by the frequency and the reflectance minima and maxima of the
externally coupled Fabry-P\'{e}rot cavity, are presented and discussed. Tuning
the externally coupled Fabry-P\'{e}rot cavity strongly modifies the optical
Hall effect signatures, which provides a new degree of freedom for optical Hall
effect experiments in addition to frequency, angle of incidence and magnetic
field direction and strength
Strain and stress relationships for optical phonon modes in monoclinic crystals with \u3ci\u3eβ\u3c/i\u3e-Ga\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e as an example
Strain-stress relationships for physical properties are of interest for heteroepitaxial material systems, where strain and stress are inherent due to thermal expansion and lattice mismatch. We report linear perturbation theory strain and stress relationships for optical phonon modes in monoclinic crystals for strain and stress situations which maintain the monoclinic symmetry of the crystal. By using symmetry group analysis and phonon frequencies obtained under various deformation scenarios from density-functional perturbation theory calculations on β-Ga2O3, we obtain four strain and four stress potential parameters for each phonon mode. We demonstrate that these parameters are sufficient to describe the frequency shift of the modes regardless of the stress or strain pattern which maintain the monoclinic symmetry of the crystal. The deformation potentials can be used together with experimentally determined phonon frequency parameters from Raman or infrared spectroscopy to evaluate the state of strain or stress of β-Ga2O3, for example, in epitaxial heterostructures
Lattice dynamics of orthorhombic NdGaO\u3csub\u3e3\u3c/sub\u3e
A complete set of infrared-active and Raman-active lattice modes is obtained from density functional theory calculations for single-crystalline centrosymmetric orthorhombic neodymium gallate. The results for infraredactive modes are compared with an analysis of the anisotropic long-wavelength properties using generalized spectroscopic ellipsometry. The frequency-dependent dielectric function tensor and dielectric loss function tensor of orthorhombic neodymium gallium oxide are reported in the spectral range of 80–1200 cm−1. A combined eigendielectric displacement vector summation and dielectric displacement loss vector summation approach augmented by considerations of lattice anharmonicity is utilized to describe the experimentally determined tensor elements. All infrared-active transverse and longitudinal optical mode pairs obtained from density functional theory calculations are identified by our generalized spectroscopic ellipsometry investigation. The results for Raman-active modes are compared to previously published experimental observations. Static and high-frequency dielectric constants from theory as well as experiment are presented and discussed in comparison with values reported previously in the literature
Strain and stress relationships for optical phonon modes in monoclinic crystals with \u3ci\u3eβ\u3c/i\u3e-Ga\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e as an example
Strain-stress relationships for physical properties are of interest for heteroepitaxial material systems, where strain and stress are inherent due to thermal expansion and lattice mismatch. We report linear perturbation theory strain and stress relationships for optical phonon modes in monoclinic crystals for strain and stress situations which maintain the monoclinic symmetry of the crystal. By using symmetry group analysis and phonon frequencies obtained under various deformation scenarios from density-functional perturbation theory calculations on β-Ga2O3, we obtain four strain and four stress potential parameters for each phonon mode. We demonstrate that these parameters are sufficient to describe the frequency shift of the modes regardless of the stress or strain pattern which maintain the monoclinic symmetry of the crystal. The deformation potentials can be used together with experimentally determined phonon frequency parameters from Raman or infrared spectroscopy to evaluate the state of strain or stress of β-Ga2O3, for example, in epitaxial heterostructures
Lattice dynamics of orthorhombic NdGaO\u3csub\u3e3\u3c/sub\u3e
A complete set of infrared-active and Raman-active lattice modes is obtained from density functional theory calculations for single-crystalline centrosymmetric orthorhombic neodymium gallate. The results for infraredactive modes are compared with an analysis of the anisotropic long-wavelength properties using generalized spectroscopic ellipsometry. The frequency-dependent dielectric function tensor and dielectric loss function tensor of orthorhombic neodymium gallium oxide are reported in the spectral range of 80–1200 cm−1. A combined eigendielectric displacement vector summation and dielectric displacement loss vector summation approach augmented by considerations of lattice anharmonicity is utilized to describe the experimentally determined tensor elements. All infrared-active transverse and longitudinal optical mode pairs obtained from density functional theory calculations are identified by our generalized spectroscopic ellipsometry investigation. The results for Raman-active modes are compared to previously published experimental observations. Static and high-frequency dielectric constants from theory as well as experiment are presented and discussed in comparison with values reported previously in the literature
Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect
We report on polarization selection rules of inter-Landau level transitions
using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on
epitaxial graphene grown by thermal decomposition of silicon carbide. We
observe symmetric and anti-symmetric signatures in our data due to polarization
preserving and polarization mixing inter-Landau level transitions,
respectively. From field-dependent measurements we identify that transitions in
decoupled graphene mono-layers are governed by polarization mixing selection
rules, whereas transitions in coupled graphene mono-layers are governed by
polarization preserving selection rules. The selection rules may find
explanation by different coupling mechanisms of inter-Landau level transitions
with free charge carrier magneto-optic plasma oscillations
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