177 research outputs found
Impact of classical forces and decoherence in multi-terminal Aharonov-Bohm networks
Multi-terminal Aharonov-Bohm (AB) rings are ideal building blocks for quantum
networks (QNs) thanks to their ability to map input states into controlled
coherent superpositions of output states. We report on experiments performed on
three-terminal GaAs/Al_(x)Ga_(1-x)As AB devices and compare our results with a
scattering-matrix model including Lorentz forces and decoherence. Our devices
were studied as a function of external magnetic field (B) and gate voltage at
temperatures down to 350 mK. The total output current from two terminals while
applying a small bias to the third lead was found to be symmetric with respect
to B with AB oscillations showing abrupt phase jumps between 0 and pi at
different values of gate voltage and at low magnetic fields, reminiscent of the
phase-rigidity constraint due to Onsager-Casimir relations. Individual outputs
show quasi-linear dependence of the oscillation phase on the external electric
field. We emphasize that a simple scattering-matrix approach can not model the
observed behavior and propose an improved description that can fully describe
the observed phenomena. Furthermore, we shall show that our model can be
successfully exploited to determine the range of experimental parameters that
guarantee a minimum oscillation visibility, given the geometry and coherence
length of a QN.Comment: 7 pages, 8 figure
Electronic implementations of Interaction-Free Measurements
Three different implementations of interaction-free measurements (IFMs) in
solid-state nanodevices are discussed. The first one is based on a series of
concatenated Mach-Zehnder interferometers, in analogy to optical-IFM setups.
The second one consists of a single interferometer and concatenation is
achieved in the time domain making use of a quantized electron emitter. The
third implementation consists of an asymmetric Aharonov-Bohm ring. For all
three cases we show that the presence of a dephasing source acting on one arm
of the interferometer can be detected without degrading the coherence of the
measured current. Electronic implementations of IFMs in nanoelectronics may
play a fundamental role as very accurate and noninvasive measuring schemes for
quantum devices.Comment: 12 pages, 10 figure
Coulomb-Blockade directional coupler
A tunable directional coupler based on Coulomb Blockade effect is presented.
Two electron waveguides are coupled by a quantum dot to an injector waveguide.
Electron confinement is obtained by surface Schottky gates on single
GaAs/AlGaAs heterojunction. Magneto-electrical measurements down to 350 mK are
presented and large transconductance oscillations are reported on both outputs
up to 4.2 K. Experimental results are interpreted in terms of Coulomb Blockade
effect and the relevance of the present design strategy for the implementation
of an electronic multiplexer is underlined.Comment: 4 pages, 4 figures, to be published in Applied Physics Letter
Singlet-triplet transition in a few-electron lateral InGaAs-InAlAs quantum dot
The magnetic-field evolution of Coulomb blockade peaks in lateral
InGaAs/InAlAs quantum dots in the few-electron regime is reported. Quantum dots
are defined by gates evaporated onto a 60 nm-thick hydrogen silsesquioxane
insulating film. A gyromagnetic factor of 4.4 is measured via zero-bias spin
spectroscopy and a transition from singlet to triplet spin configuration is
found at an in-plane magnetic field B = 0.7 T. This observation opens the way
to the manipulation of singlet and triplet states at moderate fields and its
relevance for quantum information applications will be discussed.Comment: 4 pages, 3 figure
Direct measurements of the fractional quantum Hall effect gaps
We measure the chemical potential jump across the fractional gap in the
low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs
single heterojunctions. In the fully spin-polarized regime, the gap for filling
factor nu=1/3 increases LINEARLY with magnetic field and is coincident with
that for nu=2/3, reflecting the electron-hole symmetry in the spin-split Landau
level. In low magnetic fields, at the ground-state spin transition for nu=2/3,
a correlated behavior of the nu=1/3 and nu=2/3 gaps is observed
Low field magnetotransport in strained Si/SiGe cavities
Low field magnetotransport revealing signatures of ballistic transport
effects in strained Si/SiGe cavities is investigated. We fabricated strained
Si/SiGe cavities by confining a high mobility Si/SiGe 2DEG in a bended nanowire
geometry defined by electron-beam lithography and reactive ion etching. The
main features observed in the low temperature magnetoresistance curves are the
presence of a zero-field magnetoresistance peak and of an oscillatory structure
at low fields. By adopting a simple geometrical model we explain the
oscillatory structure in terms of electron magnetic focusing. A detailed
examination of the zero-field peak lineshape clearly shows deviations from the
predictions of ballistic weak localization theory.Comment: Submitted to Physical Review B, 25 pages, 7 figure
Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice
We report the magneto-transport properties of a two-dimensional electron gas
in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral
potential with honeycomb geometry. Periodic oscillations of the
magneto-resistance and a delocalized-localized transition are shown by applying
a gate voltage. We argue that electrons in such artificial-graphene lattices
offer a promising approach for the simulation of quantum phases dictated by
Coulomb interactions
Magneto-transport in high g-factor, low-density two-dimensional electron systems confined in In_0.75Ga_0.25As/In_0.75Al_0.25As quantum wells
We report magneto-transport measurements on high-mobility two-dimensional
electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single
quantum wells. Several quantum Hall states are observed in a wide range of
temperatures and electron densities, the latter controlled by a gate voltage
down to values of 1.10^11 cm^-2. A tilted-field configuration is used to induce
Landau level crossings and magnetic transitions between quantum Hall states
with different spin polarizations. A large filling factor dependent effective
electronic g-factor is determined by the coincidence method and cyclotron
resonance measurements. From these measurements the change in
exchange-correlation energy at the magnetic transition is deduced. These
results demonstrate the impact of many-body effects in tilted-field
magneto-transport of high-mobility 2DESs confined in
In_0.75Ga_0.25As/In_0.75Al_0.25As quantum wells. The large tunability of
electron density and effective g-factor, in addition, make this material system
a promising candidate for the observation of a large variety of spin-related
phenomena.Comment: 7 pages, 5 figure
Anti-crossings of spin-split Landau levels in an InAs two-dimensional electron gas with spin-orbit coupling
We report tilted-field transport measurements in the quantum-Hall regime in
an InAs/In_0.75Ga_0.25As/In_0.75Al_0.25As quantum well. We observe
anti-crossings of spin-split Landau levels, which suggest a mixing of spin
states at Landau level coincidence. We propose that the level repulsion is due
to the presence of spin-orbit and of band-non-parabolicity terms which are
relevant in narrow-gap systems. Furthermore, electron-electron interaction is
significant in our structure, as demonstrated by the large values of the
interaction-induced enhancement of the electronic g-factor.Comment: 4 pages, 3 figure
Transport in strongly-coupled graphene-LaAlO3/SrTiO3 hybrid systems
We report on the transport properties of hybrid devices obtained by
depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep
two-dimensional electron system. At low graphene-oxide inter-layer bias the two
electron systems are electrically isolated, despite their small spatial
separation, and very efficient reciprocal gating is shown. A pronounced
rectifying behavior is observed for larger bias values and ascribed to the
interplay between electrostatic depletion and tunneling across the LaAlO3
barrier. The relevance of these results in the context of strongly-coupled
bilayer systems is discussed.Comment: 10 pages, 3 figure
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