Kramers-Kronig constrained variational analysis of optical spectra

A universal method of extraction of the complex dielectric function $\epsilon(\omega)=\epsilon_{1}(\omega)+i\epsilon_{2}(\omega)$ from experimentally accessible optical quantities is developed. The central idea is that $\epsilon_{2}(\omega)$ is parameterized independently at each node of a properly chosen anchor frequency mesh, while $\epsilon_{1}(\omega)$ is dynamically coupled to $\epsilon_{2}(\omega)$ by the Kramers-Kronig (KK) transformation. This approach can be regarded as a limiting case of the multi-oscillator fitting of spectra, when the number of oscillators is of the order of the number of experimental points. In the case of the normal-incidence reflectivity from a semi-infinite isotropic sample the new method gives essentially the same result as the conventional KK transformation of reflectivity. In contrast to the conventional approaches, the proposed technique is applicable, without readaptation, to virtually all types of linear-response optical measurements, or arbitrary combinations of measurements, such as reflectivity, transmission, ellipsometry {\it etc.}, done on different types of samples, including thin films and anisotropic crystals.Comment: 10 pages, 7 figure

Emotion-Related Visual Mismatch Responses in Schizophrenia: Impairments and Correlations with Emotion Recognition.

BACKGROUND AND OBJECTIVES:Mismatch negativity (MMN) is an event-related potential (ERP) measure of preattentional sensory processing. While deficits in the auditory MMN are robust electrophysiological findings in schizophrenia, little is known about visual mismatch response and its association with social cognitive functions such as emotion recognition in schizophrenia. Our aim was to study the potential deficit in the visual mismatch response to unexpected facial emotions in schizophrenia and its association with emotion recognition impairments, and to localize the sources of the mismatch signals. EXPERIMENTAL DESIGN:The sample comprised 24 patients with schizophrenia and 24 healthy control subjects. Controls were matched individually to patients by gender, age, and education. ERPs were recorded using a high-density 128-channel BioSemi amplifier. Mismatch responses to happy and fearful faces were determined in 2 time windows over six regions of interest (ROIs). Emotion recognition performance and its association with the mismatch response were also investigated. PRINCIPAL OBSERVATIONS:Mismatch signals to both emotional conditions were significantly attenuated in patients compared to controls in central and temporal ROIs. Controls recognized emotions significantly better than patients. The association between overall emotion recognition performance and mismatch response to the happy condition was significant in the 250-360 ms time window in the central ROI. The estimated sources of the mismatch responses for both emotional conditions were localized in frontal regions, where patients showed significantly lower activity. CONCLUSIONS:Impaired generation of mismatch signals indicate insufficient automatic processing of emotions in patients with schizophrenia, which correlates strongly with decreased emotion recognition

Atomistic Simulation of the Ion-Assisted Deposition of Silicon Dioxide Thin Films

A systematic study of the most significant parameters of the ion-assisted deposited silicon dioxide films is carried out using the classical molecular dynamics method. The energy of the deposited silicon and oxygen atoms corresponds to the thermal evaporation of the target; the energy of the assisting oxygen ions is 100 eV. It is found that an increase in the flow of assisting ions to approximately 10% of the flow of deposited atoms leads to an increase in density and refractive index by 0.5 g/cm3 and 0.1, respectively. A further increase in the flux of assisting ions slightly affects the film density and density profile. The concentration of point defects, which affect the optical properties of the films, and stressed structural rings with two or three silicon atoms noticeably decrease with an increase in the flux of assisting ions. The film growth rate somewhat decreases with an increase in the assisting ions flux. The dependence of the surface roughness on the assisting ions flux is investigated. The anisotropy of the deposited films, due to the difference in the directions of motion of the deposited atoms and assisting ions, is estimated using the effective medium approach