23 research outputs found
ΠΠ΅ΠΎΡΠΊΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠ°Ρ Ρ Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠ° ΠΈ ΠΏΡΠΎΠ΅ΠΊΡ ΠΌΠΎΠ½ΠΈΡΠΎΡΠΈΠ½Π³Π° Π½Π° ΡΠ΅ΡΡΠΈΡΠΎΡΠΈΠΈ ΠΠΠ "Π€Π°ΡΠΌΡΡΠ°Π½Π΄Π°ΡΡ-Π’ΠΎΠΌΡΠΊΡ ΠΈΠΌΡΠ°ΡΠΌ" (Π³. Π’ΠΎΠΌΡΠΊ)
Π Π°Π±ΠΎΡΠ° Π²ΠΊΠ»ΡΡΠ°Π΅Ρ Π² ΡΠ΅Π±Ρ Π³Π΅ΠΎΡΠΊΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΡΡ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΡ ΠΎΠ±ΡΠ΅ΠΊΡΠ° ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ - "ΠΠΠ Π€Π°ΡΠΌΡΡΠ°Π½Π΄Π°ΡΡ Π’ΠΎΠΌΡΠΊΡ
ΠΈΠΌΡΠ°ΡΠΌ". ΠΠΏΠΈΡΠ°Π½ΠΈΠ΅ Π²ΠΎΠ·Π΄Π΅ΠΉΡΡΠ²ΠΈΡ Π΄Π΅ΡΡΠ΅Π»ΡΠ½ΠΎΡΡΠΈ ΠΏΡΠ΅Π΄ΠΏΡΠΈΡΡΠΈΡ Π½Π° ΠΎΠΊΡΡΠΆΠ°ΡΡΡΡ ΡΡΠ΅Π΄Ρ. Π‘ΠΎΡΡΠ°Π²Π»Π΅Π½ΠΈΠ΅ ΠΏΡΠΎΠ³ΡΠ°ΠΌΠΌΡ ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΡΡΠ²Π΅Π½Π½ΠΎΠ³ΠΎ ΡΠΊΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ Π΄Π»Ρ Π΄Π°Π½Π½ΠΎΠ³ΠΎ ΠΏΡΠ΅Π΄ΠΏΡΠΈΡΡΠΈΡ. Π’Π°ΠΊΠΆΠ΅ ΡΠ°Π·Π΄Π΅Π» ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΡΡΠ²Π΅Π½Π½ΠΎΠΉ Π±Π΅Π·ΠΎΠΏΠ°ΡΠ½ΠΎΡΡΠΈ ΠΈ ΡΠΈΠ½Π°Π½ΡΠΎΠ²ΠΎΠ³ΠΎ ΠΌΠ΅Π½Π΅Π΄ΠΆΠΌΠ΅Π½ΡΠ°.The work includes the geoecological characteristics of the research object - OJSC "Pharmstandard Tomskkhimpharm". Description of the impact of the enterprise on the environment. Drawing up a program of industrial environmental control for this enterprise. Also the section of industrial safety and financial management
Ab-initio Molecular Dynamics study of electronic and optical properties of silicon quantum wires: Orientational Effects
We analyze the influence of spatial orientation on the optical response of
hydrogenated silicon quantum wires. The results are relevant for the
interpretation of the optical properties of light emitting porous silicon. We
study (111)-oriented wires and compare the present results with those
previously obtained within the same theoretical framework for (001)-oriented
wires [F. Buda {\it et al.}, {\it Phys. Rev. Lett.} {\bf 69}, 1272, (1992)]. In
analogy with the (001)-oriented wires and at variance with crystalline bulk
silicon, we find that the (111)-oriented wires exhibit a direct gap at whose value is largely enhanced with respect to that found in bulk
silicon because of quantum confinement effects. The imaginary part of the
dielectric function, for the external field polarized in the direction of the
axis of the wires, shows features that, while being qualitatively similar to
those observed for the (001) wires, are not present in the bulk. The main
conclusion which emerges from the present study is that, if wires a few
nanometers large are present in the porous material, they are
optically active independently of their specific orientation.Comment: 14 pages (plus 6 figures), Revte
Structural and optical properties of porous nanocrystalline Ge
Nanocrystalline Ge films were prepared by isotropic chemical etching on single-crystalline Ge substrates with 100 and 111 orientations. The structural and optical properties have been investigated by transmission electron microscopy (TEM), electron diffraction (ED), Raman photoluminescence (PL), and infrared spectroscopy. The average size of nanocrystals (NCs) was estimated by fitting of the Raman spectra using a phonon-confinement model developed for spherical semiconductor NCs. Considered collectively TEM, ED, and Raman results indicate that all films contain high density of 3-4 nm diameter, diamond-structured Ge NCs with disordered surfaces. There are indications that surface of nanoparticles is mainly hydrogen terminated even for air-stabilized samples. Red PL is observed at room temperature upon excitation by 1.96 eV with peak energy of similar to 1.55 eV and correlates well with recent theoretical calculations of the enlarged optical gap in Ge NCs of similar size. (C) 2008 American Institute of Physics
Can chemically etched germanium or germanium nanocrystals emit visible photoluminescence?
Photoluntinescence (PL) properties of various Ge-based nanostructured materials, prepared using methods such as chemical etching, ion implantation and spark processing, have been studied. The PL was much stronger from the samples containing Ge nanocrystals, in comparison with their counterparts with no or less Ge nanoparticles, hinting at the likely role of the quantum confinement in Ge nanocrystals (NCs) in the light emission process. On the other hand, defects in the oxides or Ge-O bonded material alone are also shown to emit light in the same energy zone as with the Ge NCs. Discussion on these results is presented. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim