Radiation tolerance studies of silicon microstrip sensors for the CBM Silicon Tracking System

Double-sided silicon microstrip sensors will be used in the Silicon Tracking System of the CBM experiment. During experimental run they will be exposed to a radiation field of up to 1x1014 1 MeV neq cm-2. Radiation tolerance studies were made on prototypes from two different vendors. Results from these prototype detectors before and after irradiation to twice that neutron fluence are discussed

Metal micro-detectors: development of “transparent” position sensitive detector for beam diagnostics

Metal Micro-strip Detector (MMD) represents a novel position sensitive detector for wide range of applications. The main advantages of MMD are low thickness, high radiation resistance and high spatial resolution. MMD production technology includes some stages: micro-strip layout made by photo-lithography on silicon wafer, plasma-chemistry etching of the silicon wafer in the operating window, micro-cabling connection to the readout electronics and DAQ. Commercially available read-out systems (VA_SCM3 microchip preamplifier, Time Pix readout chip, Gotthard, X-DAS) have been studied for use with MMD. Characterization studies of the MMD are presented in details.Металлический микростриповый детектор (ММД) представляет собой новый позиционно- чувствительный детектор для широкого спектра применений. Основные преимущества ММД: малая толщина, высокая радиационная стойкость, высокое пространственное разрешение. Технология производства ММД включает в себя несколько этапов: микростриповая структура создается при помощи фотолитографии на кремниевой пластине, плазмо-химическое травление кремниевой пластины в рабочем окне, подключение микро-кабелем к считывающей электронике. Коммерчески доступные системы считывания и обработки данных (VA_SCM3, TimePix, Gotthard, X-DAS) были изучены для использования с ММД. Представлены результаты исследований MMD на пучках разных частиц.Металевий мікростріповий детектор (ММД) являє собою новий позиційно-чутливий детектор для широкого спектру застосувань. Основні переваги ММД: мала товщина, висока радіаційна стійкість, висока просторова роздільна здатність. Технологія виробництва ММД включає в себе кілька етапів: мікростріпова структура створюється за допомогою фотолітографії на кремнієвій пластині, плазмо-хімічне травлення кремнієвої пластини в робочому вікні, підключення мікро-кабелем до зчитуючої електроніки. Комерційно доступні системи зчитування й обробки даних (VA_SCM3, TimePix, Gotthard, X-DAS) були вивчені для використання з ММД. Представлено результати дослідження MMD на пучках різних частинок

Theory of Thermal Motion in Electromagnetically Induced Transparency: Diffusion, Doppler, Dicke and Ramsey

We present a theoretical model for electromagnetically induced transparency (EIT) in vapor, that incorporates atomic motion and velocity-changing collisions into the dynamics of the density-matrix distribution. Within a unified formalism we demonstrate various motional effects, known for EIT in vapor: Doppler-broadening of the absorption spectrum; Dicke-narrowing and time-of-flight broadening of the transmission window for a finite-sized probe; Diffusion of atomic coherence during storage of light and diffusion of the light-matter excitation during slow-light propagation; and Ramsey-narrowing of the spectrum for a probe and pump beams of finite-size.Comment: Reference added, typos correcte

Proceedings of the third French-Ukrainian workshop on the instrumentation developments for HEP

The reports collected in these proceedings have been presented in the third French-Ukrainian workshop on the instrumentation developments for high-energy physics held at LAL, Orsay on October 15-16. The workshop was conducted in the scope of the IDEATE International Associated Laboratory (LIA). Joint developments between French and Ukrainian laboratories and universities as well as new proposals have been discussed. The main topics of the papers presented in the Proceedings are developments for accelerator and beam monitoring, detector developments, joint developments for large-scale high-energy and astroparticle physics projects, medical applications.Comment: 3rd French-Ukrainian workshop on the instrumentation developments for High Energy Physics, October 15-16, 2015, LAL, Orsay, France, 94 page

Mean-field phase diagram of disordered bosons in a lattice at non-zero temperature

Bosons in a periodic lattice with on-site disorder at low but non-zero temperature are considered within a mean-field theory. The criteria used for the definition of the superfluid, Mott insulator and Bose glass are analysed. Since the compressibility does never vanish at non-zero temperature, it can not be used as a general criterium. We show that the phases are unambiguously distinguished by the superfluid density and the density of states of the low-energy exitations. The phase diagram of the system is calculated. It is shown that even a tiny temperature leads to a significant shift of the boundary between the Bose glass and superfluid

Numerical study of one-dimensional and interacting Bose-Einstein condensates in a random potential

We present a detailed numerical study of the effect of a disordered potential on a confined one-dimensional Bose-Einstein condensate, in the framework of a mean-field description. For repulsive interactions, we consider the Thomas-Fermi and Gaussian limits and for attractive interactions the behavior of soliton solutions. We find that the disorder average spatial extension of the stationary density profile decreases with an increasing strength of the disordered potential both for repulsive and attractive interactions among bosons. In the Thomas Fermi limit, the suppression of transport is accompanied by a strong localization of the bosons around the state k=0 in momentum space. The time dependent density profiles differ considerably in the cases we have considered. For attractive Bose-Einstein condensates, a bright soliton exists with an overall unchanged shape, but a disorder dependent width. For weak disorder, the soliton moves on and for a stronger disorder, it bounces back and forth between high potential barriers.Comment: 13 pages, 13 figures, few typos correcte

Analysis of Localization Phenomena in Weakly Interacting Disordered Lattice Gases

Disorder plays a crucial role in many systems particularly in solid state physics. However, the disorder in a particular system can usually not be chosen or controlled. We show that the unique control available for ultracold atomic gases may be used for the production and observation of disordered quantum degenerate gases. A detailed analysis of localization effects for two possible realizations of a disordered potential is presented. In a theoretical analysis clear localization effects are observed when a superlattice is used to provide a quasiperiodic disorder. The effects of localization are analyzed by investigating the superfluid fraction and the localization length within the system. The theoretical analysis in this paper paves a clear path for the future observation of Anderson-like localization in disordered quantum gases.Comment: 9 pages, 13 figure

RMS-R3 – the system for monitoring the region of interactions and background at the LHCB experiment (CERN)

The upgraded Large Hadron Collider beauty (LHCb) detector will provide data taken in Run3 at the instantaneous luminosity of proton-proton collisions increased to 2⋅1033 cm-2s-1 at energies of up to 14 TeV. To ensure the safe operation of the experiment, a new beam and background Radiation Monitoring System (RMS-R3) was built. RMS-R3 is based on metal-foil detector technology developed at the Institute for Nuclear Research, National Academy of Sciences of Ukraine (Kyiv, Ukraine). The system comprises four detector modules with two sensors in each. Their frequency response is proportional to the flux of incident charged particles. The modules are located around the beam pipe at a distance of 2.2 m from the interaction point. The results measured during the Run3 in 2022 testify to the reliable operation of the system. Applying the asymmetry method, high-accuracy data were obtained on the localization of the interactions region and the beam and background contribution