Impact of phonons on dephasing of individual excitons in deterministic quantum dot microlenses

Optimized light-matter coupling in semiconductor nanostructures is a key to understand their optical properties and can be enabled by advanced fabrication techniques. Using in-situ electron beam lithography combined with a low-temperature cathodoluminescence imaging, we deterministically fabricate microlenses above selected InAs quantum dots (QDs) achieving their efficient coupling to the external light field. This enables to perform four-wave mixing micro-spectroscopy of single QD excitons, revealing the exciton population and coherence dynamics. We infer the temperature dependence of the dephasing in order to address the impact of phonons on the decoherence of confined excitons. The loss of the coherence over the first picoseconds is associated with the emission of a phonon wave packet, also governing the phonon background in photoluminescence (PL) spectra. Using theory based on the independent boson model, we consistently explain the initial coherence decay, the zero-phonon line fraction, and the lineshape of the phonon-assisted PL using realistic quantum dot geometries

Quantum light sources based on deterministic microlenses structures with (111) In(Ga)As and AlInAs QDs.

The results of the development and implementation of a single photon source based on a bottom semiconductor Bragg reflector, top deterministic GaAs microlens structures and a single (111) In(Ga)As QD are presented. The structure of the microcavity ensures effective pumping of a single (111) In(Ga)As QD and high emission output efficiency, a clear single – photon emission was detected with a second – order correlation function at zero delay g(2)(0) = 0.07. A system of QD’s on the basis of AlXIn1-XAs/AlYGa1-YAs solid solutions has been studied. The usage of broadband AlXIn1-XAs solid solutions as the basis of quantum dots makes it possible to expand considerably the spectral emission range into the short-wave region, including the wavelength region near 770 nm being of interest for the design of aerospace systems of quantum cryptography. The optical characteristics of single AlXIn1-XAs quantum dots grown according to the Stranski–Krastanov mechanism are studied by the cryogenic microphotoluminescence method

Single-photon emission from InGaAs quantum dots grown on (111) GaAs

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 96, 093112 (2010) and may be found at https://doi.org/10.1063/1.3337097.In this letter, we demonstrate that self-organized InGaAs quantum dots (QDs) grown on GaAs (111) substrate using droplet epitaxy have great potential for the generation of entangled photon pairs. The QDs show spectrally sharp luminescence lines and low spatial density. A second order correlation value of g(2)(0)<0.3 proves single-photon emission. By comparing the power dependence of the luminescence from a number of QDs we identify a typical luminescence fingerprint. In polarization dependent microphotoluminescence studies a fine-structure splitting ranging ≤40eV down to the determination limit of our setup (10eV) was observed.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Lateral positioning of InGaAs quantum dots using a buried stressor

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 100, 093111 (2012) and may be found at https://doi.org/10.1063/1.3691251.We present a “bottom-up” approach for the lateral alignment of semiconductor quantum dots (QDs) based on strain-driven self-organization. A buried stressor formed by partial oxidation of (Al,Ga)As layers is employed in order to create a locally varying strain field at a GaAs(001) growth surface. During subsequent strained layer growth, local self-organization of (In,Ga)As QDs is controlled by the contour shape of the stressor. Large vertical separation of the QD growth plane from the buried stressor interface of 150 nm is achieved enabling high optical quality of QDs. Optical characterization confirms narrow QD emission lines without spectral diffusion.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Reclaiming the local in EU peacebuilding: Effectiveness, ownership, and resistance

Since the early 2000s, the "local turn" has thoroughly transformed the field of peacebuilding. The European Union (EU) policy discourse on peacebuilding has also aligned with this trend, with an increasing number of EU policy statements insisting on the importance of "the local." However, most studies on EU peacebuilding still adopt a top-down approach and focus on institutions, capabilities, and decision-making at the EU level. This special issue contributes to the literature by focusing on bottom-up and local dynamics of EU peacebuilding. After outlining the rationale and the scope of the special issue, this article discusses the local turn in international peacebuilding and identifies several interrelated concepts relevant to theorizing the role of the local, specifically those of effectiveness, ownership, and resistance. In the conclusion, we summarize the key contributions of this special issue and suggest some avenues for further research

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