110 research outputs found

    In situ determination of the energy dependence of the high-frequency mobility in polymers

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    The high-frequency mobility in disordered systems is governed by transport properties on mesoscopic length scales, which makes it a sensitive probe for the amount of local order. Here we present a method to measure the energy dependence of the high frequency mobility by combining an electrochemically gated transistor with in-situ quasi-optical measurements in the sub-terahertz domain. We apply this method to poly([2-methoxy-5-(3',7'-dimethylocyloxy)]-p-phenylene vinylene) (OC_1C_10-PPV) and find a mobility at least as high as 0.1 cm^2V^-1s^-1.Comment: 3 pages (incl. 3 figures) in Appl. Phys. Let

    Tunable Frohlich Polarons in Organic Single-Crystal Transistors

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    In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device performance- has been related to the quality of the organic semiconductor. Recently, it has been appreciated that also the nearby dielectric has an unexpectedly strong influence. The mechanisms responsible for this influence are not understood. To investigate these mechanisms we have studied transport through organic single crystal FETs with different gate insulators. We find that the temperature dependence of the mobility evolves from metallic-like to insulating-like with increasing the dielectric constant of the insulator. The phenomenon is accounted for by a two-dimensional Frohlich polaron model that quantitatively describes our observations and shows that increasing the dielectric polarizability results in a crossover from the weak to the strong polaronic coupling regime

    Greener Method to Obtain a Key Intermediate of Vitamin E over Cu-ZSM-5

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    The catalytic oxidation of 2,3,5-trimethylphenol was performed over transition metals modified ZSM-5 zeolites employing hydrogen peroxide as oxidant under mild reaction conditions. Catalysts samples were characterized by several techniques (XRD, FTIR, BET, AA) and cristallinity and orthorhombic symmetry were confirmed for all of them. Best catalytic results were obtained for Cu-ZSM-5 sample, so further activity studies were done over this material. 2,3,5-trimethyl-1,4-benzoquinone was obtained as the main product of the selective oxidation. Reaction parameters (nature of the solvent, hydrogen peroxide concentration, reaction time, catalyst mass, substrate initial concentration and reaction temperature) were evaluated to reach the optimum reaction conditions. According to the obtained results, an apparent activation energy of 52.33 kJ/mol was calculated.Fil: Saux, Clara. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Cordoba. Centro de Investigacion y Tecnologia Quimica; Argentina. Universidad Tecnologica Nacional. Facultad Regional Cordoba; ArgentinaFil: Renzini, Maria Soledad. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Cordoba. Centro de Investigacion y Tecnologia Quimica; Argentina. Universidad Tecnologica Nacional. Facultad Regional Cordoba; ArgentinaFil: Gómez, Silvina. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Cordoba. Centro de Investigacion y Tecnologia Quimica; Argentina. Universidad Tecnologica Nacional. Facultad Regional Cordoba; ArgentinaFil: Pierella, Liliana Beatriz. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Cordoba. Centro de Investigacion y Tecnologia Quimica; Argentina. Universidad Tecnologica Nacional. Facultad Regional Cordoba; Argentin

    High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors

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    We have investigated the electron mobility on field-effect transistors based on PDIF-CN2_{2} single crystals. The family of the small molecules PDI8-CN2_{2} has been chosen for the promising results obtained for vapour-deposited thin film FETs. We used as gate dielectric a layer of PMMA (spinned on top of the SiO2_{2}), to reduce the possibility of electron trapping by hydroxyl groups present at surface of the oxide. For these devices we obtained a room temperature mobility of 6 cm2^{2}/Vs in vacuum and 3 cm2^{2}/Vs in air. Our measurements demonstrate the possibility to obtain n-type OFETs with performances comparable to those of p-type devices.Comment: published online in JAC

    Solution-processed, Self-organized Organic Single Crystal Arrays with Controlled Crystal Orientation

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    A facile solution process for the fabrication of organic single crystal semiconductor devices which meets the demand for low-cost and large-area fabrication of high performance electronic devices is demonstrated. In this paper, we develop a bottom-up method which enables direct formation of organic semiconductor single crystals at selected locations with desired orientations. Here oriented growth of one-dimensional organic crystals is achieved by using self-assembly of organic molecules as the driving force to align these crystals in patterned regions. Based upon the self-organized organic single crystals, we fabricate organic field effect transistor arrays which exhibit an average field-effect mobility of 1.1 cm2V−1s−1. This method can be carried out under ambient atmosphere at room temperature, thus particularly promising for production of future plastic electronics

    Heterogeneous sulfoxidation of thioethers by hydrogen peroxide over layered double hydroxides as catalysts

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    International audienceA new method for mild oxidation of thioethers with hydrogen peroxide in heterogeneous catalysis is described. The layered double hydroxides (or hydrotalcite-like materials) act as basic catalysts for the sulfoxidation reaction with hydrogen peroxide in the presence of acetonitrile. The influence of the nature of thioether, the type of catalyst, the reaction temperature and reaction time on the catalytic activity and selectivity in this reaction has been investigated. A mechanism of the sulfoxidation reaction is proposed. © 2001 Elsevier Science B.V
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