Optimization and uncertainty quantification of gradient index metasurfaces

The design of intrinsically flat two-dimensional optical components, i.e., metasurfaces, generally requires an extensive parameter search to target the appropriate scattering properties of their constituting building blocks. Such design methodologies neglect important near-field interaction effects, playing an essential role in limiting the device performance. Optimization of transmission, phase-addressing and broadband performances of metasurfaces require new numerical tools. Additionally, uncertainties and systematic fabrication errors should be analysed. These estimations, of critical importance in the case of large production of metaoptics components, are useful to further project their deployment in industrial applications. Here, we report on a computational methodology to optimize metasurface designs. We complement this computational methodology by quantifying the impact of fabrication uncertainties on the experimentally characterized components. This analysis provides general perspectives on the overall metaoptics performances, giving an idea of the expected average behavior of a large number of devices

Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN

Due to its large piezoelectric and spontaneous polarization coefficients combined with the possibility of being grown lattice-matched with GaN, wide bandgap ScAlN is becoming a promising material in III-nitride semiconductor technology. In this work, and for the first time, ScAlN growth has been performed by molecular beam epitaxy with ammonia source as nitrogen precursor. High electron mobility transistor heterostructures with a 26 nm thick Sc0.15Al0.85N barrier have been grown on GaN-on-sapphire substrates. The effect of growth temperature, ranging between 620 and 800 °C, was carefully investigated. A smooth surface morphology with a mean roughness below 0.5 nm is obtained whatever the temperature while for 670 °C the (0002) and (101̄3) x-ray diffraction rocking curves show minimum full-width at half-maximum of 620 and 720 arc sec, respectively. Furthermore, two-dimensional electron gases with a high density of 3-3.5 × 1013/cm2 were evidenced in the heterostructures grown below 720 °C

Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires

International audienceThermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist, but are hindered by the diffraction limit of light, the need for transducer layers, the slow-scan rate of probes, ultra-thin sample requirements, or extensive fabrication

Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces

International audienceIntensity and polarization are two fundamental components of light. Independently control of them is of tremendous interest in many applications. In this paper, we propose a general vectorial encryption method, which enables arbitrary far-field light distribution with the local polarization, including orientations and ellipticities, decoupling intensity from polarization across a broad bandwidth using geometric phase metasurfaces. By revamping the well-known iterative Fourier transform algorithm, we propose “à la carte” design of far-field intensity and polarization distribution with vectorial Fourier metasurfaces. A series of non-conventional vectorial field distribution, mimicking cylindrical vector beams in the sense that they share the same intensity profile but with different polarization distribution and a speckled phase distribution, is demonstrated. Vectorial Fourier optical metasurfaces may enable important applications in the area of complex light beam generation, secure optical data storage, steganography and optical communications

Analyzing full-polarized metasurface holograms by vectorial ptychography

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Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

In the present study, the selective sublimation of the p-GaN cap layer of Al(Ga)N/GaN HEMTs is developed to replace the commonly used dry etching with no risk of damage in the barrier layer in order to fabricate enhanced mode transistors. Thanks to this approach, enhancement-mode transistors are fabricated with a threshold voltage between 0 V and +1.5 V depending on the barrier layer aluminum molar fraction and thickness. Furthermore, we show the benefit of the combination of selective sublimation with the regrowth of AlGaN to reduce access resistance in these transistors which can be co-integrated with depletion-mode devices fabricated in the same process in areas where p-GaN has been totally evaporated.Co-intégration des transistors GaN à enrichissement et à déplétion pour les circuits de communication RF de la prochaine générationRéseau national sur Ga

Porous Nitride Light-Emitting Diodes

International audienceA porous InGaN/GaN blue light-emitting diode isdemonstrated using selective area sublimation. Transmissionelectron microscopy reveals that the structure is porous down tothe Si substrate; however, the porosity is higher in the GaN buffer,while smaller pores are observed in the active region. This changeof porosity between the active region and the buffer is explained bythe modification of the dislocation pattern in the heterostructure,which is evidenced by weak beam transmission electronmicroscopy on a nonporosified reference sample. Cathodolumi-nescence mapping and electron beam-induced current microscopy(EBIC) analyses are used to probe the impact of porosification onthe optical and electrical properties of the structure at nanoscaledimensions. It is observed that neither the quantum well emissionnor the p−n junction EBIC spatial profile was degraded after porosification with respect to the nonannealed reference sample. A light-emitting diode with a fully porous active region is fabricated using a parylene pore filling for electrical insulation, and its electroluminescence is analyzed