Generation of neutral atomic beams utilizing photodetachment by high power diode laser stacks

We demonstrate the use of high power diode laser stacks to photodetach fast hydrogen and carbon anions and produce ground term neutral atomic beams. We achieve photodetachment efficiencies of $\sim$7.4\% for H$^-$ at a beam energy of 10\,keV and $\sim$3.7\% for C$^-$ at 28\,keV. The diode laser systems used here operate at 975\,nm and 808\,nm, respectively, and provide high continuous power levels of up to 2\,kW, without the need of additional enhancements like optical cavities. The alignment of the beams is straightforward and operation at constant power levels is very stable, while maintenance is minimal. We present a dedicated photodetachment setup that is suitable to efficiently neutralize the majority of stable negative ions in the periodic table

Isotope effect for associative detachment: H(D)−+H(D)→H2(D2)+e

We report experimental and theoretical results for associative detachment (AD) of D−+D→D2+e−. We compare these data to our previously published results for H−+H→H2+e−. The measurements show no significant isotope effect in the total cross section. This is to be contrasted with previously published experimental and theoretical work which has found a significant isotope effect in diatomic systems for partial AD cross sections, i.e., as a function of the rotational and vibrational levels of the final molecule formed. Our work implies that though the rovibrational distribution of flux is different for AD of H− + H and D− + D, the total flux for these two systems is essentially the same when summed over all possible final channels

High mortality associated with tapeworm parasitism in geladas (Theropithecus gelada) in the Simien Mountains National Park, Ethiopia

Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/138266/1/ajp22684.pdfhttps://deepblue.lib.umich.edu/bitstream/2027.42/138266/2/ajp22684_am.pd

Static and Dynamic Properties of a Viscous Silica Melt Molecular Dynamics Computer Simulations

We present the results of a large scale molecular dynamics computer simulation in which we investigated the static and dynamic properties of a silica melt in the temperature range in which the viscosity of the system changes from O(10^-2) Poise to O(10^2) Poise. We show that even at temperatures as high as 4000 K the structure of this system is very similar to the random tetrahedral network found in silica at lower temperatures. The temperature dependence of the concentration of the defects in this network shows an Arrhenius law. From the partial structure factors we calculate the neutron scattering function and find that it agrees very well with experimental neutron scattering data. At low temperatures the temperature dependence of the diffusion constants $D$ shows an Arrhenius law with activation energies which are in very good agreement with the experimental values. With increasing temperature we find that this dependence shows a cross-over to one which can be described well by a power-law, D\propto (T-T_c)^gamma. The critical temperature T_c is 3330 K and the exponent gamma is close to 2.1. Since we find a similar cross-over in the viscosity we have evidence that the relaxation dynamics of the system changes from a flow-like motion of the particles, as described by the ideal version of mode-coupling theory, to a hopping like motion. We show that such a change of the transport mechanism is also observed in the product of the diffusion constant and the life time of a Si-O bond, or the space and time dependence of the van Hove correlation functions.Comment: 30 pages of Latex, 14 figure