Physical model for subsurface silicon writing

We have recently reported a direct laser writing method enabling buried structures deep inside silicon. Here we study the formation of these subsurface structures. We take advantage of Nonlinearity Engineering to understand this new phenomenon. © 2015 IEEE

1.06μm-1.35μm coherent pulse generation by a synchronously- pumped phosphosilicate raman fiber laser

[No abstract available

Computer-generated holograms embedded in bulk silicon with nonlinear laser lithography

Recently, we have showed a direct laser writing method to form subsurface structures inside silicon by exploiting nonlinear interactions. Here, we demonstrate utilization of this phenomenon to create computer-generated holograms buried in silicon. � 2016 OSA

Buried waveguides written deep inside silicon

[No abstract available

Femtosecond laser written waveguides deep inside silicon

Photonic devices that can guide, transfer, or modulate light are highly desired in electronics and integrated silicon (Si) photonics. Here, we demonstrate for the first time, to the best of our knowledge, the creation of optical waveguides deep inside Si using femtosecond pulses at a central wavelength of 1.5 μm. To this end, we use 350 fs long, 2 μJ pulses with a repetition rate of 250 kHz from an Er-doped fiber laser, which we focused inside Si to create permanent modifications of the crystal. The position of the beam is accurately controlled with pump-probe imaging during fabrication. Waveguides that were 5.5 mm in length and 20 μm in diameter were created by scanning the focal position along the beam propagation axis. The fabricated waveguides were characterized with a continuous-wave laser operating at 1.5 μm. The refractive index change inside the waveguide was measured with optical shadowgraphy, yielding a value of 6 × 10−4, and by direct light coupling and far-field imaging, yielding a value of 3.5 × 10−4. The formation mechanism of the modification is discussed. © 2017 Optical Society of America

Holograms deep inside Silicon

Through the Nonlinear Laser Lithography method, we demonstrate the first computer generated holograms fabricated deep inside Silicon. Fourier and Fresnel holograms are fabricated buried inside Si wafers, and a generation algorithm is developed for hologram fabrication. © OSA 2016

Laser-slicing of silicon with 3D nonlinear laser lithography

Recently, we have showed a direct laser writing method that exploits nonlinear interactions to form subsurface modifications in silicon. Here, we use the technique to demonstrate laser-slicing of silicon and its applications

Optical waveguides written deep inside silicon by Femtosecond Laser

[No abstract available

Femtosecond laser written waveguides deep inside silicon

Photonic devices that can guide, transfer, or modulate light are highly desired in electronics and integrated silicon (Si) photonics. Here, we demonstrate for the first time, to the best of our knowledge, the creation of optical waveguides deep inside Si using femtosecond pulses at a central wavelength of 1.5 mu m. To this end, we use 350 fs long, 2 mu J pulses with a repetition rate of 250 kHz from an Er-doped fiber laser, which we focused inside Si to create permanent modifications of the crystal. The position of the beam is accurately controlled with pump-probe imaging during fabrication. Waveguides that were 5.5 mm in length and 20 mu m in diameter were created by scanning the focal position along the beam propagation axis. The fabricated waveguides were characterized with a continuous-wave laser operating at 1.5 mu m. The refractive index change inside the waveguide was measured with optical shadowgraphy, yielding a value of 6 x 10(-4), and by direct light coupling and far-field imaging, yielding a value of 3.5 x 10(-4). The formation mechanism of the modification is discussed. (C) 2017 Optical Society of Americ