681 research outputs found

    Matter-positronium interaction: An exact diagonalization study of the He atom - positronium system

    Full text link
    The many-body system comprising a He nucleus, three electrons, and a positron has been studied using the exact diagonalization technique. The purpose has been to clarify to which extent the system can be considered as a distinguishable positronium (Ps) atom interacting with a He atom and, thereby, to pave the way to a practical atomistic modeling of Ps states and annihilation in matter. The maximum value of the distance between the positron and the nucleus is constrained and the Ps atom at different distances from the nucleus is identified from the electron and positron densities, as well as from the electron-positron distance and center-of-mass distributions. The polarization of the Ps atom increases as its distance from the nucleus decreases. A depletion of the He electron density, particularly large at low density values, has been observed. The ortho-Ps pick-off annihilation rate calculated as the overlap of the positron and the free He electron densities has to be corrected for the observed depletion, specially at large pores/voids.Comment: 18 pages, 8 figure

    Spin dependent electron transport through a magnetic resonant tunneling diode

    Get PDF
    Electron transport properties in nanostructures can be modeled, for example, by using the semiclassical Wigner formalism or the quantum mechanical Green's functions formalism. We compare the performance and the results of these methods in the case of magnetic resonant-tunneling diodes. We have implemented the two methods within the self-consistent spin-density-functional theory. Our numerical implementation of the Wigner formalism is based on the finite-difference scheme whereas for the Green's function formalism the finite-element method is used. As a specific application, we consider the device studied by Slobodskyy et all. [Phys. Rev. Lett. 90, 246601 (2003)] and analyze their experimental results. The Wigner and Green's functions formalisms give similar electron densities and potentials but, surprisingly, the former method requires much more computer resources in order to obtain numerically accurate results for currents. Both of the formalisms can successfully be used to model magnetic resonant tunneling diode structures.Comment: 13 pages and 12 figure

    Own or shared silage feeding place for dairy cows?

    Get PDF
    We studied behaviour, silage eating and milk production of cows when every animal had an own silage feeding place and when the feeding place was shared with two other cows

    Time Dependence of Charge Transfer Processes in Diamond Studied with Positrons

    Get PDF
    We have developed a method called optical transient positron spectroscopy and apply it to study the optically induced carrier trapping and charge transfer processes in natural brown type IIa diamond. By measuring the positron lifetime with continuous and pulsed illumination, we present an estimate of the optical absorption cross section of the vacancy clusters causing the brown color. The vacancy clusters accept electrons from the valence band in the absorption process, giving rise to photoconductivity.Peer reviewe

    Evolution of vacancy-related defects upon annealing of ion-implanted germanium

    Get PDF
    Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×10 exp 12 cm exp−2 and 4×10 exp 14 cm exp−2. Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1×10 exp 13 cm exp −2 and a fluence of 1×10 exp 14 cm exp -2 was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200–400 °C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species.Peer reviewe

    THE EUROPEAN NUCLEAR EDUCATION NETWORK AND ITS ACTIONS IN FAVOUR OF EDUCATION, TRAINING, INFORMATION AND TRANSFER OF EXPERTISE

    Get PDF
    The European Nuclear Education Network (ENEN) Association is a non-profit organization established by the consortium of the EU 5th Framework Programme (FP) “ENEN” project in 2003. The ENEN Association started as a network of universities and research centers involved in education and training in nuclear engineering in EU countries and is presently involved in the challenging role of coordinating E&T in the nuclear fields in Europe. The main objective of ENEN is, in fact, the preservation and further development of expertise in the nuclear fields by higher education and training. Its members are now universities, research centers and industrial bodies established in European Countries; in addition, MoUs have been signed with several institutions and networks beyond the borders of European Union, thus reaching the number of more than 60 members. The objective of this paper is to provide an up to date view of the actions and plans of the Association in pursuing its missions

    Clustering of vacancy defects in high-purity semi-insulating SiC

    Get PDF
    Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of 4--5 missing atoms and (ii) Si vacancy related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity both in as-grown and annealed material. Our results suggest that Si vacancy related complexes compensate electrically the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity.Comment: 8 pages, 5 figure

    Direct observation of mono-vacancy and self-interstitial recovery in tungsten

    Get PDF
    Reliable and accurate knowledge of the physical properties of elementary point defects is crucial for predictive modeling of the evolution of radiation damage in materials employed in harsh conditions. We have applied positron annihilation spectroscopy to directly detect mono-vacancy defects created in tungsten through particle irradiation at cryogenic temperatures, as well as their recovery kinetics. We find that efficient self-healing of the primary damage takes place through Frenkel pair recombination already at 35 K, in line with an upper bound of 0.1 eV for the migration barrier of self-interstitials. Further self-interstitial migration is observed above 50 K with activation energies in the range of 0.12-0.42 eV through the release of the self-interstitial atoms from impurities and structural defects and following recombination with mono-vacancies. Mono-vacancy migration is activated at around 550 K with a migration barrier of E-m(V) = 1.85 +/- 0.05 eV. (C) 2019 Author(s).Peer reviewe

    Influence of silicon doping on vacancies and optical properties of AlxGa1-xN thin films

    Get PDF
    The authors have used positron annihilation spectroscopy and photoluminescence measurements to study the influence of silicon doping on vacancy formation in AlGaN:Si structures. The results show a correlation between the Doppler broadening measurements and the intensity from 510nm photoluminescence transition. The reduction in the W parameter when the [Si]∕[Al+Ga] fraction in the gas phase is above 3×10exp−4 indicates that the positrons annihilate in an environment where less Ga 3d electrons are present, i.e., they are trapped in group-III vacancies. The observation of vacancies at these silicon concentrations coincides with the onset of the photoluminescence transition at 510 nm.Peer reviewe

    Enhanced light extraction from InGaN/GaN quantum wells with silver gratings

    Get PDF
    We demonstrate that an extraction enhancement by a factor of 2.8 can be obtained for a GaN quantum well structure using metallic nanostructures, compared to a flat semiconductor. The InGaN/GaN quantum well is inserted into a dielectric waveguide, naturally formed in the structure, and a silver grating is deposited on the surface and covered with a polymer film. The polymer layer greatly improves the extraction compared to a single metallic grating. The comparison of the experiments with simulations gives strong indications on the key role of weakly guided modes in the polymer layer diffracted by the grating.Peer reviewe
    • 

    corecore