Random to chaotic temperature transition in low-field Fano-Feshbach resonances of cold thulium atoms

Here, we report on the observation of a random to chaotic temperature transition in the spacing of Fano-Feshbach resonances in the ultracold polarized gas of thulium atoms. This transition is due to the appearance of so-called d-resonances, which are not accessible at low temperatures, in the spectra at high temperatures, which drastically changes thulium's overall resonance statistic. In addition to this statistical change, it has been observed that s- and d-resonances experience quite different temperature shifts: s-resonances experience almost no shift with the temperature, while d-resonances experience an obvious positive shift. In addition, careful analysis of the broad Fano-Feshbach resonances enabled the determination of the sign of thulium's background scattering length. A rethermalization experiment made it possible to estimate a length value of a=144+-38a.u.. This proves that thulium atoms are suitable for achieving Bose-Einstein Condensation

Bose-Einstein condensate as a diagnostic tool for an optical lattice formed by 1064 nm laser light

Recently, the thulium atom has been cooled down to the temperature of Bose-Einstein condensation. While the condensate of the thulium atom has a lot of applications in quantum simulations and other areas of physics, it can also serve as a unique diagnostic tool for many atomic experiments. In the present study, the Bose-Einstein condensate of the thulium atom was successfully utilized to diagnose an optical lattice and detect unwanted reflections in the experiments with the 1064 nm optical lattice, which will further be used in a quantum gas microscope experiment

Defect segregation and its effect on the photoelectrochemical properties of Ti-doped hematite photoanodes for solar water splitting

Optimising the photoelectrochemical performance of hematite photoanodes for solar water splitting requires better understanding of the relationships between dopant distribution, structural defects and photoelectrochemical properties. Here, we use complementary characterisation techniques including electron microscopy, conductive atomic force microscopy (CAFM), Rutherford backscattering spectroscopy (RBS), atom probe tomography (APT) and intensity modulated photocurrent spectroscopy (IMPS) to study this correlation in Ti-doped (1 cat.%) hematite films deposited by pulsed laser deposition (PLD) on F:SnO2 (FTO) coated glass substrates. The deposition was carried out at 300 {\deg}C, followed by annealing at 500 deg C for 2 h. Upon annealing, Ti was observed by APT to segregate to the hematite/FTO interface and into some hematite grains. Since no other pronounced changes in microstructure and chemical composition were observed by electron microscopy and RBS after annealing, the non-uniform Ti redistribution seems to be the reason for a reduced interfacial recombination in the annealed films, as observed by IMPS. This results in a lower onset potential, higher photocurrent and larger fill factor with respect to the as-deposited state. This work provides atomic-scale insights into the microscopic inhomogeneity in Ti-doped hematite thin films and the role of defect segregation in their electrical and photoelectrochemical properties